Double-junction serial InGaAs/InGaAsP (indium gallium arsenium/indium gallium arsenium phosphorus) double-end solar cell and manufacturing method thereof

Abstract

The invention discloses a manufacturing method of a double-junction serial InGaAs / InGaAsP (indium gallium arsenium / indium gallium arsenium phosphorus) efficient double-end solar cell which is applied to a solar spectral long-wave band. According to the manufacturing method, the p+InGaAs / n+InGaAs is utilized as a tunnel junction; an InGaAs solar cell result and an InGaAsP solar cell result basing on an InP (indium phosphorus) substrate are subjected to serial growth, so that the wavelengths of the InGaAs solar cell result and the InGaAsP solar cell result meet the absorption of energy at 0.74 eV and 1.05 eV; and the absorption and the energy conversion of the full spectrum of solar light are achieved furthest. As an ordinary mechanical cascade solar cell system in a long-wavelength solar spectrum uses a plurality of different substrates, the higher cost is caused; the manufacturing method only uses one substrate, so that the cost is greatly decreased; and simultaneously, by using a serial double-end device structure, the problems of the electrode design and the collimation of different cells, namely an upper cell, a middle cell and a lower cell, in a mechanical cascade or a three-end device are further solved effectively.

Description

technical field [0001] The invention belongs to the technical field of solar photovoltaics, in particular to a method for manufacturing a double-junction tandem solar cell. Background technique [0002] The increasing shortage of conventional energy sources such as oil and coal and the earth's ecological problems caused by their over-exploitation are the greatest challenges facing mankind in the 21st century. As a clean and renewable energy utilization technology, high-efficiency solar power generation technology has continuously made breakthroughs. Crystalline silicon solar cells, amorphous silicon solar cells, amorphous silicon thin-film solar cells, III-V compound semiconductor solar cells, II-VI compound semiconductor polycrystalline thin-film solar cells, etc. More and more solar cell technologies are maturing . The continuous improvement of photoelectric conversion efficiency and the continuous reduction of manufacturing costs have enabled photovoltaic technology to ...

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Problems solved by technology

However, the use of discrete devices also increases the difficulty and cost of system integration

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