Preparation method of Sb2Se3 solar cell based on SnO2 buffer layer

A technology for solar cells and buffer layers, applied in coatings, circuits, electrical components, etc., can solve the problems of difficult control of SnO2 deposition rate, poor uniformity, and generation of waste liquid and harmful gases.

Pending Publication Date: 2021-10-15
RES & DEV INST OF NORTHWESTERN POLYTECHNICAL UNIV IN SHENZHEN +2
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Problems solved by technology

Among them, the spray pyrolysis method is used in the preparation of SnO 2 It is easy to produce by-products in the process of thin film, and the uniformity of ...

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  • Preparation method of Sb2Se3 solar cell based on SnO2 buffer layer
  • Preparation method of Sb2Se3 solar cell based on SnO2 buffer layer
  • Preparation method of Sb2Se3 solar cell based on SnO2 buffer layer

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Embodiment Construction

[0041] Further, the drawings are further described with reference to the present invention:

[0042] (1) Selection and cleaning of the substrate:

[0043] Shenzhen South China Xiangcheng Technology Co., Ltd. used by the present invention is 15 × 15mm 2 , FTO conductive glass having a thickness of 185 nm. The FTO conductive glass is placed in a 200 ml beaker, sequentially with acetone, water absolute ethanol, deionized water ultrasound washed 20 to 30 minutes, and then dry the ultrasonic cleaning FTO conductive glass is blown with high pressure nitrogen, and put it in a dust-free cloth. In the glass container, the cleaning of the clean FTO should be used as soon as possible to avoid secondary pollution in a long time.

[0044] (2) SNO 2 Preparation of the buffer layer:

[0045] The present invention adopts the MSP-300BT magnetron-controlled sputter coating machine of Beijing Chuangweiner Technology Co., Ltd., fixing the FTO glass substrate after cleaning on the sample stage, put it...

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Abstract

The invention relates to a preparation method of a Sb2Se3 solar cell based on a SnO2 buffer layer, which comprises the following steps of: depositing a SnO2 thin film by using a magnetron sputtering method, depositing a Sb2Se3 thin film by using a near-space sublimation method CSS, respectively annealing and modifying the SnO2 thin film and the Sb2Se3 thin film, and finally preparing a thin film solar cell device with an FTO/SnO2/Sb2Se3/Au top lining structure. Compared with a spray pyrolysis method and a low-temperature pyrolysis method, the magnetron sputtering method has the advantages that the prepared SnO2 film is more compact, higher in purity, better in repeatability and controllable in thickness, introduction of impurities is effectively avoided through sputtering in a high-vacuum chamber, the prepared film is better in uniformity, and waste liquid and any harmful gas cannot be generated; and the CSS is a preparation method for heating a source material to quickly sublimate the source material and depositing the thin film on the substrate, and the CSS source is high in utilization rate, simple in process, good in repeatability and high in film layer purity, so that the Sb2Se3 thin film prepared by the CSS is more suitable for commercial production.

Description

Technical field [0001] The method of the present invention is in the preparation of a solar cell, to a SnO-based 2 The buffer layer Sb 2 SE 3 The method of preparing the solar cell. Background technique [0002] Today, the growing energy shortage, the development and utilization of new energy concern. Solar energy as a green non-toxic and abundant new energy, can effectively solve the energy crisis facing humanity today, and thin-film solar cells with its lightweight, flexible and less consumables, etc., has been a hot topic in the energy sector. Wherein the copper indium gallium tin (CIGS) and cadmium telluride (CdTe) has been successfully commercialized, but expensive elements In and Ga, Cd have biological toxicity, the need to continue to explore inexpensive and non-toxic light-absorbing material. [0003] Studies have shown that selenium and antimony (Sb 2 SE 3 ) Material having good photoelectric response, a larger absorption coefficient and good chemical stability in the ul...

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Application Information

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IPC IPC(8): H01L31/18H01L31/032C23C14/02C23C14/08C23C14/18C23C14/24C23C14/35C23C14/58
CPCH01L31/032H01L31/18C23C14/086C23C14/35C23C14/5806C23C14/24C23C14/18C23C14/021C23C14/3457Y02P70/50
Inventor 谭婷婷徐云海孟庆岱魏登科查钢强李颖锐吴森
Owner RES & DEV INST OF NORTHWESTERN POLYTECHNICAL UNIV IN SHENZHEN
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