Passivation contact IBC battery and preparation method thereof, assembly and system

A battery and solar cell technology, applied in the field of solar cells, can solve the problems affecting the hidden open circuit voltage of the cell, the internal quantum efficiency of the dark saturation current density, and the back surface passivation effect is not good, and achieve good surface passivation effect, high Effects of Open Circuit Voltage and Conversion Efficiency

Inactive Publication Date: 2017-02-01
TAIZHOU ZHONGLAI PHOTOELECTRIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing back contact battery has the problem of poor passivation effect on the back surface, and the quality of passivation will affect the hidden open circuit voltage, dark saturation current density and internal quantum efficiency of the short-wave band of the battery sheet.

Method used

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  • Passivation contact IBC battery and preparation method thereof, assembly and system
  • Passivation contact IBC battery and preparation method thereof, assembly and system
  • Passivation contact IBC battery and preparation method thereof, assembly and system

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Embodiment Construction

[0041] The present invention will be described in detail below in conjunction with the embodiments and the accompanying drawings. It should be noted that the described embodiments are only intended to facilitate the understanding of the present invention, rather than limiting it in any way.

[0042] A kind of preparation method of the IBC cell of passivation contact of the present embodiment, comprises the following steps:

[0043] (1), select the N-type crystalline silicon substrate 10 of 156mm*156mm, and do texture processing to the front surface of the N-type crystalline silicon substrate 10; The resistivity of the N-type crystalline silicon substrate 10 is 0.5~15Ω·cm, preferably 1 ~5Ω·cm; the thickness of the N-type crystalline silicon substrate 10 is 50-300 μm, preferably 80-200 μm; the battery structure after this step is as follows figure 1 shown.

[0044] (2), the back surface oxide layer 20 is grown on the back surface of the N-type crystalline silicon substrate 10, ...

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Abstract

The invention relates to a passivation contact IBC battery and a preparation method thereof, an assembly and a system. According to the preparation method of the passivation contact IBC battery, a doping treatment method of the back surface of an N-type crystalline silicon substrate comprises the steps of growing a back surface oxide layer on the back surface of the N-type crystalline silicon substrate, growing an intrinsic polysilicon layer or an intrinsic amorphous silicon layer on the back surface oxide layer and then selectively injecting boron ions and phosphorus ions on the intrinsic polysilicon layer or the intrinsic amorphous silicon layer; and then carrying out degradation and coating treatment. The passivation contact IBC battery has the beneficial effects that a passivation contact technology is combined with a back contact structure; the oxide layer is arranged on the back surface of the N-type crystalline silicon substrate and p+ and n+ doped regions which are alternately arranged are arranged on the oxide layer; the oxide layer disclosed by the invention can bring a better surface passivation effect for the back surface of the N-type crystalline silicon substrate; meanwhile, current carriers can be freely transmitted through the oxide layer; and the prepared battery has higher open-circuit voltage and conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an IBC cell with passivation contact and a preparation method, component and system thereof. Background technique [0002] A solar cell is a semiconductor device that converts light energy into electrical energy. Lower production costs and higher energy conversion efficiency have always been the goals pursued by the solar cell industry. For conventional solar cells, the p+ doped region contact electrodes and the n+ doped region contact electrodes are respectively located on the front and back sides of the battery sheet. The front of the battery is the light-receiving surface, and the coverage of the metal contact electrodes on the front will inevitably cause a part of the incident sunlight to be blocked and reflected by the metal electrodes, resulting in a part of optical loss. The coverage area of ​​the front metal electrode of an ordinary crystalline silicon solar cell is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068H01L31/0216
CPCH01L31/02168H01L31/068H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 林建伟刘志锋季根华孙玉海刘勇张育政
Owner TAIZHOU ZHONGLAI PHOTOELECTRIC TECH CO LTD
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