Method for preparing large-scale small-pixel indium gallium arsenide focal plane detector

Abstract

The invention discloses a method for preparing a large-scale small-pixel indium gallium arsenide focal plane detector. The method comprises the specific steps as follows: 1) depositing a silicon nitride diffusion mask, 2) opening a diffusion window, 3) performing closing-tube diffusion, 4) growing a P electrode, 5) performing rapid thermal annealing, 6) opening an N groove, 7) depositing the silicon nitride passivation film, 8) opening P and N electrode holes, 9) growing a thickened electrode, 10) metallizing, and 11) growing an indium bump. The invention has the advantages that: 1, the preparation process is simpler, and the technique of first growing the P-region electrode is used to reduce the risk of conduction between the P-region electrode and the N-region InP material caused by lithography deviation and over-etching; 2, the inductively coupled plasma chemical vapor deposition (ICPCVD) technology is used to grow the low-temperature silicon nitride passivation film, and the surface passivation layer of the chip is dense, which reduces the damage caused by the process to the surface of the material and improves the surface passivation effect; and 3, the lithographic growth technique is adopted for the metalized region and the indium bump region to reduce the contact resistance of the device.

Description

technical field [0001] The invention relates to a preparation technology of a focal plane detector, specifically a method for preparing a large-scale small pixel focal plane detector, which is suitable for preparing a high-density, high-reliability planar indium gallium arsenic focal plane detector. The above-mentioned large-scale refers to more than 2000ⅹ2000 yuan, and the above-mentioned small pixel refers to a center-to-center distance of less than 10 μm. Background technique [0002] Short-wave infrared InGaAs detectors have excellent performances such as high detection rate, high quantum efficiency, and room temperature operation, and are widely used in military, civil, and aerospace fields. With the development of short-wave infrared imaging technology to high-resolution technology, it is necessary to develop a high-performance large-scale, small pixel InGaAs focal plane detector manufacturing process. [0003] The cross-sectional structure of the InGaAs detector chip...

AI Technical Summary

Problems solved by technology

[0018] 4. There is a certain deviation in the metallization of the small pixel photosensitive chip and the lithographic alignment of the grown indium column, which leads to a decrease in the contact area between the electrode and the indium column, and there is a problem affecting the contact resistance of the device

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