Back-passivation efficient PERL battery technology

A process and battery technology, applied in the field of high-efficiency PERL battery technology with back passivation, can solve the problems of unstable process, difficult removal of borosilicate glass phase, cross-doping, etc., and achieve the goal of simplifying the process flow, reducing production costs and reducing dosage Effect

Inactive Publication Date: 2015-06-17
SHANGHAI SHENZHOU NEW ENERGY DEV
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  • Summary
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

This patent is about the preparation process of double-sided batteries. In the patent, when using NH4F etching solution for single-sided etching, special protection is required for the other side. If the process is unstable, it will have a great impact on the subsequent diffusion of POCL3, and cr

Method used

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  • Back-passivation efficient PERL battery technology
  • Back-passivation efficient PERL battery technology
  • Back-passivation efficient PERL battery technology

Examples

Experimental program
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Example Embodiment

[0029] Example 1

[0030] A back passivation high-efficiency PERL battery process, the process is as follows figure 1 As shown, the following steps are taken:

[0031] Step 1: The original silicon wafer is cleaned in HF / HNO3 mixed solution to remove the surface damage layer, cutting line marks, etc.;

[0032] Step 2: Polish the above-mentioned silicon wafer on both sides in NaOH solution;

[0033] Step 3: Deposit SiOx on one side of the polished silicon wafer. High temperature thermal oxidation, PECVD or APCVD can be used to deposit SiOx film on one side, and then annealed at 400°C for densification;

[0034] Step 4: Prepare the 1-2um high pyramid suede on one side of the silicon wafer in TMAH;

[0035] Step 5: The above-mentioned silicon wafers are deposited and diffused in single-sided POCL3 in a high-temperature furnace;

[0036] Step 6: Use wet etching equipment to remove surface phosphosilicate glass (PSG);

[0037] Step 7: Deposit SiNx with a thickness of about 80nm on the front sid...

Example Embodiment

[0044] Example 2

[0045] A back-passivation high-efficiency PERL battery process. The process is the same as that of Embodiment 1, except that in step (3), a SiNx dielectric layer is deposited on a single side of the polished silicon wafer. Step (8) deposit a SiOx dielectric layer on the backside of the polished surface of the silicon wafer.

Example Embodiment

[0046] Example 3

[0047] A back-passivation high-efficiency PERL battery process. The process is the same as that of Embodiment 1, except that step (3) deposits an a-Si dielectric layer on a single side of the polished silicon wafer. Step (8) deposit an a-Si dielectric layer on the backside of the polished surface of the silicon wafer.

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PUM

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Abstract

The invention relates to a back-passivation efficient PERL battery technology. The back-passivation efficient PERL battery technology comprises the steps that a silicon wafer is cleaned in a HF / HNO3 mixed solution, a surface damaged layer is removed, double-side polishing is carried out, a SiOx film layer is deposited on a single-side, a suede face is made, POCl3 single-side deposition and diffusion are carried out in a high-temperature furnace, surface phosphorosilicate glass is removed, SiNx with a thickness of 80 nm is deposited on the front side of the silicon wafer, SiOx with a thickness ranging from 10 nm to 20 nm is deposited on the back side of a polished surface of the silicon wafer, an SiNx layer with a thickness ranging from 100 nm to 200 nm is deposited in a pipe-type or a plate-type PECVD equipment, slots and holes are formed in a back-passivation layer, and silk-screen printing and sintering are carried out on back aluminium paste, a back electrode and a positive electrode. Compared with the prior art, the technology is simplified, and therefore the large-scale mass production is facilitated.

Description

technical field [0001] The invention relates to the research on industrialized high-efficiency back passivation PERL battery, in particular to a technology of back passivation high-efficiency PERL battery. Background technique [0002] In response to several guidelines issued by the State Council on the photovoltaic industry's new production capacity monocrystalline cell efficiency greater than 20%, and polycrystalline cell efficiency greater than 18%, it is most practical to choose a solution that is easy to be compatible with existing scale production lines and easy to control production costs technical route. [0003] Back-passivated high-efficiency crystalline silicon cells are currently the most potential to achieve 20% cell efficiency. Its technical route is based on the passivated cell emitter junction and rear partial contact (PERL) cell structure, and the cell cost controllable high-efficiency crystalline silicon cell technology route. However, the high-efficiency ...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/02363Y02P70/50
Inventor 汪建强周利荣
Owner SHANGHAI SHENZHOU NEW ENERGY DEV
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