Method for inactivating tellurium-zinc-cadmium pixel detector electrodes

A detector, cadmium zinc telluride technology, applied in circuits, electrical components, semiconductor devices, etc., to achieve good surface passivation effect, improve passivation effect, and reduce leakage current.

Inactive Publication Date: 2010-07-21
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005]The use of wet chemical passivation requires high cleanliness on the surface of the wafer, and the electrode needs to be protected, and the operation is cumbersome; hydrogen peroxide and other wet chemical passivation The use of chemical substances may introduce contamination; especially wet chemical passivation is difficult to passivate complex electrodes in the preparation of CdZnTe pixel detectors

Method used

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  • Method for inactivating tellurium-zinc-cadmium pixel detector electrodes
  • Method for inactivating tellurium-zinc-cadmium pixel detector electrodes
  • Method for inactivating tellurium-zinc-cadmium pixel detector electrodes

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Experimental program
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Effect test

Embodiment 1

[0017] Embodiment 1: the first step, to Cd 0.9 Zn 0.1 The Te crystal is wire-cut, ground, mechanically polished, cleaned and then chemically polished in 2% Br-MeOH to obtain a ready-to-use CdZnTe wafer. Then, the mechanically polished and chemically polished CdZnTe wafers are cleaned, glued, dried, exposed, developed, vacuum evaporated electrodes and peeled off to prepare pixel detector electrodes.

[0018] In the second step, put the prepared pixel detector electrode into a RIE-3 type reactive ion etching machine to evacuate, and the vacuum degree is 0.3333Pa.

[0019] The third step is to adjust the oxygen inflow, the parameter is to adjust the oxygen inflow, and the parameter is 70cm 3 / min.

[0020] The fourth step is to adjust the working air pressure, the parameter is 0.75Pa.

[0021] The fifth step is to adjust the radio frequency power, and its parameter is 10W.

[0022] The sixth step is to start timing etching when the power adjustment is completed. The etching ...

Embodiment 2

[0024] Embodiment 2: the first step, to Cd 0.9 Zn 0.1 The Te crystal is wire-cut, ground, mechanically polished, cleaned and then chemically polished in 2% Br-MeOH to obtain a ready-to-use CdZnTe wafer. Then, the mechanically polished and chemically polished CdZnTe wafers are cleaned, glued, dried, exposed, developed, vacuum evaporated, and stripped to prepare CdZnTe pixel detector electrodes.

[0025] In the second step, the prepared pixel detector electrodes are put into a RIE-3 type reactive ion etching machine for vacuuming, and the vacuum degree is 0.3999Pa.

[0026] The third step is to adjust the oxygen inflow, the parameter is to adjust the oxygen inflow, and the parameter is 80cm 3 / min.

[0027] The fourth step is to adjust the working air pressure, the parameter is 1.0Pa

[0028] The fifth step is to adjust the RF power, the parameter is 9W.

[0029] The sixth step is to start timing etching when the power adjustment is completed. The etching time is 50 minutes...

Embodiment 3

[0031] Embodiment 3: the first step, to Cd 0.9 Zn 0.1 The Te crystal is wire-cut, ground, mechanically polished, cleaned and then chemically polished in 3% Br-MeOH to obtain a ready-to-use CdZnTe wafer. Then, the mechanically polished and chemically polished CdZnTe wafer is cleaned, glued, dried, exposed, developed, vacuum evaporated electrode and peeled off to prepare the pixel detector electrode.

[0032] In the second step, the prepared pixel detector electrodes are put into a RIE-3 type reactive ion etching machine for vacuuming, and the vacuum degree is 0.3333Pa.

[0033] The third step is to adjust the oxygen inflow, the parameter is to adjust the oxygen inflow, and the parameter is 75cm 3 / min.

[0034] The fourth step is to adjust the working air pressure, the parameter is 0.5Pa

[0035] The fifth step is to adjust the RF power, the parameter is 8W.

[0036]The sixth step is to start timing etching when the power adjustment is completed. The etching time is 35 min...

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Abstract

The invention discloses a method for inactivating tellurium-zinc-cadmium pixel detector electrodes, which is used for inactivating the tellurium-zinc-cadmium pixel detector electrodes to reduce current leakage. The method comprises the following steps of: firstly carrying out linear cutting, grinding, mechanical polishing and cleaning on cadmium-zinc-tellurium (CdZnTe) crystals, then chemically polishing in 2% of Br-MeOH to obtain standby CdZnTe chips; carrying out the processes of cleaning, gluing, drying, exposure, development, vacuum electrode evaporation, peeling and the like on the mechanically and chemically polished CdZnTe chips to prepare pixel detector electrodes; then putting the pixel detector electrodes in a RIE-3 reactive ion etcher for evacuation, wherein the vacuum degree is 0.3333-0.3999 Pa, the oxygen flow is regulated to 70-80 cm<3> / min, the working air pressure is regulated to 0.5-1.0 Pa, the radio-frequency power is regulated to 8-12 W, and the etching time is 35-50 min. The CdZnTe surfaces between the CdZnTe pixel detector electrodes prepared through the steps generate compact oxide films, the current leakage is reduced by one order of magnitude, and therefore, the invention achieves the purpose of inactivation.

Description

technical field [0001] The invention relates to a passivation method for a pixel detector electrode, in particular to a passivation method for a cadmium zinc telluride (Cd1-xZnxTe, hereinafter referred to as CdZnTe when x value is not specified) pixel detector electrode. Background technique [0002] CdZnTe is used as the detector material, and the surface treatment process of the wafer is one of the key factors determining the performance of the detector. With the continuous improvement of the performance requirements of the detector, better passivation and lower leakage current become the surface treatment of the detector. key issues. The surface passivation methods of traditional semiconductor detectors are divided into wet chemical method and dry method, and wet chemical method is mostly used for CdZnTe detectors. [0003] Document 1 "study of oxidized cadminum zinc telluride surfaces [J]. J. Tbc. sci. Technol A. 1997, 15 (3): 850-853" discloses a method of passivating...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 傅莉任洁孙玉宝查钢强
Owner NORTHWESTERN POLYTECHNICAL UNIV
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