Method for inactivating tellurium-zinc-cadmium pixel detector electrodes
A detector, cadmium zinc telluride technology, applied in circuits, electrical components, semiconductor devices, etc., to achieve good surface passivation effect, improve passivation effect, and reduce leakage current.
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Examples
Embodiment 1
[0017] Embodiment 1: the first step, to Cd 0.9 Zn 0.1 The Te crystal is wire-cut, ground, mechanically polished, cleaned and then chemically polished in 2% Br-MeOH to obtain a ready-to-use CdZnTe wafer. Then, the mechanically polished and chemically polished CdZnTe wafers are cleaned, glued, dried, exposed, developed, vacuum evaporated electrodes and peeled off to prepare pixel detector electrodes.
[0018] In the second step, put the prepared pixel detector electrode into a RIE-3 type reactive ion etching machine to evacuate, and the vacuum degree is 0.3333Pa.
[0019] The third step is to adjust the oxygen inflow, the parameter is to adjust the oxygen inflow, and the parameter is 70cm 3 / min.
[0020] The fourth step is to adjust the working air pressure, the parameter is 0.75Pa.
[0021] The fifth step is to adjust the radio frequency power, and its parameter is 10W.
[0022] The sixth step is to start timing etching when the power adjustment is completed. The etching ...
Embodiment 2
[0024] Embodiment 2: the first step, to Cd 0.9 Zn 0.1 The Te crystal is wire-cut, ground, mechanically polished, cleaned and then chemically polished in 2% Br-MeOH to obtain a ready-to-use CdZnTe wafer. Then, the mechanically polished and chemically polished CdZnTe wafers are cleaned, glued, dried, exposed, developed, vacuum evaporated, and stripped to prepare CdZnTe pixel detector electrodes.
[0025] In the second step, the prepared pixel detector electrodes are put into a RIE-3 type reactive ion etching machine for vacuuming, and the vacuum degree is 0.3999Pa.
[0026] The third step is to adjust the oxygen inflow, the parameter is to adjust the oxygen inflow, and the parameter is 80cm 3 / min.
[0027] The fourth step is to adjust the working air pressure, the parameter is 1.0Pa
[0028] The fifth step is to adjust the RF power, the parameter is 9W.
[0029] The sixth step is to start timing etching when the power adjustment is completed. The etching time is 50 minutes...
Embodiment 3
[0031] Embodiment 3: the first step, to Cd 0.9 Zn 0.1 The Te crystal is wire-cut, ground, mechanically polished, cleaned and then chemically polished in 3% Br-MeOH to obtain a ready-to-use CdZnTe wafer. Then, the mechanically polished and chemically polished CdZnTe wafer is cleaned, glued, dried, exposed, developed, vacuum evaporated electrode and peeled off to prepare the pixel detector electrode.
[0032] In the second step, the prepared pixel detector electrodes are put into a RIE-3 type reactive ion etching machine for vacuuming, and the vacuum degree is 0.3333Pa.
[0033] The third step is to adjust the oxygen inflow, the parameter is to adjust the oxygen inflow, and the parameter is 75cm 3 / min.
[0034] The fourth step is to adjust the working air pressure, the parameter is 0.5Pa
[0035] The fifth step is to adjust the RF power, the parameter is 8W.
[0036]The sixth step is to start timing etching when the power adjustment is completed. The etching time is 35 min...
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Description
Claims
Application Information
- IPC
- H01L31/18
- CPC
- Y02P70/50
- Inventors
- 傅莉; 任洁