Back full-passivation contact solar cell and preparation method thereof

Abstract

The invention discloses a back full-passivation contact solar cell and a preparation method thereof. The cell comprises an all-aluminum back electric field, a nanocrystalline boron hydride doped silicon carbide layer, a silicon oxide layer, P-type silicon, an n+ emitter electrode layer, a silicon nitride layer, a back electrode, a heavily-doped n+ emitter electrode and a front electrode, wherein the all-aluminum back electric field, the nanocrystalline boron hydride doped silicon carbide layer, the silicon oxide layer, the P-type silicon, the n+ emitter electrode layer and the silicon nitridelayer are sequentially connected from the bottom to the top. One end of the heavily-doped n+ emitter electrode is connected with the front electrode, and the other end of the heavily-doped n+ emitterelectrode passes through the n+ emitter electrode layer to be embedded in the P-type silicon. The preparation method comprises the steps of cleaning, texturing, diffusion, front laser SE, secondary cleaning, surface chemical oxidation, passivation layer deposition, sintering, hydrogenation, silicon nitride layer preparation, silk-screen printing and sintering. The cell has the advantages of largeshort-circuit current, high open-circuit voltage, high photoelectric conversion efficiency and the like. The preparation method is simple in process, is low in mass production threshold, is low in preparation cost, is good in compatibility, is high in production efficiency, meets the requirements of large-scale preparation, facilitates the industrial utilization, and has very important significance.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to a rear fully passivated contact solar cell and a preparation method thereof. Background technique [0002] Compared with other energy sources, solar energy is a green resource. In the photovoltaic technology using solar energy, the improvement of energy conversion efficiency directly improves the cost competitiveness of the technology, but there are many problems in the existing photovoltaic technology that limit the improvement of efficiency. For example, recombination losses at metal contacts can greatly reduce the conversion efficiency of laboratory-scale and industrial silicon solar cells. For this reason, traditional solutions to mitigate these losses rely on obtaining heavily doped Si regions, and through the use of locally open dielectric The passivation layer is used to limit the metallization area, that is, the conversion efficiency of crystalline silicon solar cells ...

AI Technical Summary

Problems solved by technology

On the contrary, most manufactured solar cells use phosphorous diffused front emitters on p-type silicon wafers, so the polysilicon fully passivated contact technology used in TOPCon is also mainly used as a selective contact on n-type silicon wafers, and there are also Incompatibility with existing production lines

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