Rapid annealing method for preparing tunneling oxygen passivation contact structure

A contact structure and rapid annealing technology, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problems of reducing production efficiency, increasing the surface state density of silicon wafers, and increasing application costs, so as to reduce production Cost, reduction of annealing time, and improvement of production efficiency
CN110165017AActive Publication Date: 2019-08-23NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Publication Date
2019-08-23

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Abstract

The invention provides a rapid annealing method for preparing a tunneling oxygen passivation contact structure, and the method comprises the following steps: (1) preheating: increasing the temperatureof a sample to be annealed to 150-250 DEG C in process gas, and performing the heat preservation for 1-2min; (2) hydrogen release: increasing the temperature to 300-600 DEG C, and performing heat preservation for 3-10min; (3) crystallization: increasing the temperature to 780-1100 DEG C, and performing heat preservation for 1-15min; (4) cooling: reducing the temperature to 600 DEG C or less within 5 minutes. Through temperature control, the method effectively avoids the phenomenon of film explosion of the sample, and prolongs the body service life of a silicon substrate through hydrogen passivation; meanwhile, doped atoms in a thin film are fully activated; in addition, due to the fact that the annealing time is relatively short, the diffusion degree of doped atoms to the silicon substrate is weakened, the surface auger recombination is effectively reduced, the surface passivation performance of the tunneling oxygen passivation contact structure is improved; meanwhile, the contact resistivity is low; in addition, the annealing time is shortened, the production efficiency is improved, the productivity is improved, and the production cost is saved.
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Description

technical field

[0001] The invention relates to the technical field of photoelectric material preparation, in particular to an annealing method for a tunneling oxygen passivation contact structure. Background technique

[0002] Tunnel Oxygen Passivating Contact (TOPCon, Tunnel Oxide Passivating Contact) structure is composed of high-quality ultra-thin silicon oxide layer (below 2nm) and doped polysilicon film, which can be used as the back surface passivation and carrier of crystalline silicon solar cells transport structure (see figure 1 ). The tunneling oxygen passivation contact structure is characterized by: on the one hand, the ultra-thin silicon oxide layer allows carriers to be transported through the quantum tunneling effect, and at the same time reduces the surface state density of the silicon wafer to achieve chemical passivation; on the other hand, doping The polysilicon and the silicon substrate form a built-in electric field, which not only serves the purpose ...

Claims

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