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46results about How to "Reduce the degree of diffusion" patented technology
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Lignin base skin core structure nanometer/micron fiber and preparation method thereof
ActiveCN102517689AEasy to prepareMild conditionsFilament/thread formingConjugated cellulose/protein artificial filamentsOrganic solventSynthetic Polymeric Macromolecules
The invention discloses a preparation method of a lignin base skin core structure nanometer / micron fiber. The preparation method comprises the following steps: (1) by mass, adding one part of mixture of lignin and petroleum base macromolecules into 1-20 parts of organic solvents, and obtaining a lignin mixing solution after evenly mixing and fully dissolving the mixture; adding 1 part of natural or synthetic macromolecules into 4-25 parts of solvents, and obtaining a macromolecule solution after evenly mixing and fully dissolving the natural or synthetic macromolecules; and (2)performing coaxial electric spinning, leading the lignin mixing solution and the macromolecule solution respectively into two layers of a coaxial needle head, and obtaining the lignin base skin core structure nanometer / micron fiber under the effects of 5-100kV high-voltage electrostatic field when the solutions are stably extruded out of the coaxial needle head. The preparation method is simple and moderate in conditions, reduces degree of diffusion of the lignin towards a skin layer simultaneously, and improves continuity and evenness of a core layer material in the fiber.
Owner:SOUTH CHINA UNIV OF TECH
Arrangement for processing dust
InactiveCN101316641AReduce the degree of diffusionCombination devicesDispersed particle filtrationSolid matterWaste management
Owner:SANDVIK MINING & CONSTR OY
Method for manufacturing metal-like packing paper
InactiveCN101806015AImprove flatnessHigh specular reflectionSpecial visual effect coatingsLamination ancillary operationsPaper basedPrinting ink
The invention discloses a method for manufacturing metal-like packing paper, which comprises the following steps sequentially: (1), coating a metal printing ink on the paper base of the packing paper; (2), laminating the surface, which is coated with the metal printing ink, of the paper base of the packing paper with a thin film; and (3), after laminating, drying the metal printing ink, and separating the packing paper from the thin film to obtain the metal-like packing paper. The technical flow of the invention is simple and crafty; the cost is low; and the metal-like packing paper with good surface flatness, high brightness and holographic effect can be obtained.
Owner:GUANGDONG MAGNOLIA PACKING MACHINERY
Electrode system for improving performances of steel-aluminum dissimilar metal resistance spot welding head
InactiveCN106736000AReduce high temperature residence time or reaction timeReduce atomic diffusionWelding/cutting media/materialsWelding/soldering/cutting articlesHeat distributionSteel quality
The invention relates to an electrode system for improving performances of a steel-aluminum dissimilar metal resistance spot welding head. The system comprises a pair of positive electrode and negative electrode, which are arranged oppositely and have different end face structures; the end face of the positive electrode is a ball end face and is in contact with the surface of an aluminum part to be machined; two annular grooves, which are concentrically arranged and have different radiuses, are formed in the ball end face; and the end face of the negative electrode is a fat end face and is in contact with the surface of a steel part to be machined. Compared with the prior art, heat distribution of a steel-aluminum interface can be effectively improved, the growth of an IMC (Intermetallic Compound) on a connector interface is weakened, a stable button breaking mode is obtained, and the reliability of a connector in connection is improved.
Owner:SHANGHAI JIAO TONG UNIV
TV set
ActiveCN105163050AImprove recognition rateAvoiding the problems of forming a pickup cavityTelevision system detailsColor television detailsSpeech soundSize matching
Owner:HISENSE VISUAL TECH CO LTD
Dust suppressant, preparation method thereof, and dustproof method in opencast coal mining and coal transportation
PendingCN111793469AGuaranteed performanceIncrease stickinessOther chemical processesDust removalCelluloseCoal dust
The invention belongs to the technical field of dust suppressants for dust prevention in open pit coal mining, coal transportation and stockpiling processes, and discloses a preparation method of a dust suppressant, and a dust prevention method in opencast coal mining and coal transportation. 100% of the dust suppressant is prepared from, by mass, 2-5% of cellulose, 1-3% of sodium lauryl sulfate,2-4% of octadecyl acrylate, 10-15% of acrylamide, 0.05-0.1% of an initiator, 0.02-0.04% of a cross-linking agent, 0.3-0.6% of an anti-freezing agent, and the balance of water. An inhibitor not only can further improve the wettability of the dust suppressant to coal dust, so that water wets and bonds the coal dust to the greatest extent, and greatly reduces the diffusion degree of the dust, but also can play a self-healing role to complete the wrapping and covering of the dust by adding a certain amount of water after the dust bonding layer is broken, thereby improving the dust suppression efficiency and ensuring the long-term dust suppression.
Owner:SHANDONG UNIV OF SCI & TECH
Rapid annealing method for preparing tunneling oxygen passivation contact structure
ActiveCN110165017AShort processing timeShorten the annealing timeFinal product manufactureSemiconductor devicesTemperature controlOxygen
The invention provides a rapid annealing method for preparing a tunneling oxygen passivation contact structure, and the method comprises the following steps: (1) preheating: increasing the temperatureof a sample to be annealed to 150-250 DEG C in process gas, and performing the heat preservation for 1-2min; (2) hydrogen release: increasing the temperature to 300-600 DEG C, and performing heat preservation for 3-10min; (3) crystallization: increasing the temperature to 780-1100 DEG C, and performing heat preservation for 1-15min; (4) cooling: reducing the temperature to 600 DEG C or less within 5 minutes. Through temperature control, the method effectively avoids the phenomenon of film explosion of the sample, and prolongs the body service life of a silicon substrate through hydrogen passivation; meanwhile, doped atoms in a thin film are fully activated; in addition, due to the fact that the annealing time is relatively short, the diffusion degree of doped atoms to the silicon substrate is weakened, the surface auger recombination is effectively reduced, the surface passivation performance of the tunneling oxygen passivation contact structure is improved; meanwhile, the contact resistivity is low; in addition, the annealing time is shortened, the production efficiency is improved, the productivity is improved, and the production cost is saved.
Owner:NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Plasma processing apparatus and constituent part thereof
ActiveCN101740298AReduce the degree of diffusionReduce bendingElectric discharge tubesDry etchingPlasma processing
In an outer electrode 33b of an upper electrode (33) which is provided in a plasma processing apparatus 10 that uses plasma for forming dry etching process for wafers W, an angle [theta]1 of a corner 33e formed by an inner peripheral portion 33c and an inclined surface 33d is set to be 140 degrees. An angle [theta]2 of a corner 41c formed by a bottom surface 41a and an inclined surface 41b of a groove 41 is set to be 125 degrees. Also, an angle [theta]3 of a corner 41e formed by the bottom surface 41a and an inclined surface 41d of the groove 41 is set to be 125 degrees. The width L of the bottom surface 41a of the groove 41 is set to be twice or more the length of the sheaths.
Owner:TOKYO ELECTRON LTD
Graphene-silver composite electrode preparation method and application thereof
ActiveCN107068398AImprove pressure resistanceHigh insulation resistanceFixed capacitor electrodesStacked capacitorsComposite electrodeSilver electrode
The invention discloses a graphene-silver composite electrode preparation method, and the method comprises the steps: mixing the prepared graphene oxide dispersion liquid and silver nitrate, carrying out the electrophoretic deposition, flushing, stoving, coating, two-segment sintering, and polishing, and obtaining a graphene-silver composite electrode. The graphene-silver composite electrode is used in a high-voltage ceramic capacitor. Compared with a conventional silver electrode, the graphene-silver composite electrode greatly reduces the diffusion degree, and effectively improves the overall voltage resistance of the ceramic capacitor. Moreover, the insulating resistance of the capacitor is large, and the capacitor is not liable to be aged, and is better in application prospect.
Owner:SUZHOU HAILINGDA EIECTRONIC TECH CO LTD
Odor monitoring and emergency disposal method for sensitive area around organic pollution site
PendingCN112578087ASolve the problem of atmospheric monitoringProblem solvingAlarmsMaterial analysisData displayMonitoring site
The invention discloses an odor monitoring and emergency disposal method for a sensitive area around an organic pollution site, which comprises a wireless monitoring probe system, a monitoring platform system, an early warning alarm system and an odor emergency disposal system which are sequentially and correspondingly arranged, and is characterized in that the wireless monitoring probe system comprises a wireless monitoring device and a wireless monitoring probe, the monitoring platform system comprises an on-line data display screen and an intelligent processing system, and the intelligent analysis system is correspondingly connected with the on-line data display screen and the early warning alarm system. The method solves the problem that the sensitive area monitoring point position isnot timely and effective enough in the repair and treatment construction process of the organic pollution site, dynamically monitors the sensitive area of the project construction site, reduces the influence on the environment and personnel of the sensitive area in the construction process, and further ensures the implementation of engineering and the construction period.
Owner:中科朗劢技术有限公司
Semiconductor device structure and fabrication method of semiconductor device structure
ActiveCN102881723AImprove current impact resistanceReduce the degree of diffusionSemiconductor/solid-state device manufacturingSemiconductor devicesEngineeringP type silicon
The invention discloses a semiconductor device structure which comprises a substrate, a plurality of P traps and a plurality of dielectric film areas, wherein an N-type epitaxy is grown on the substrate and provided with at least one P trench filled with P-type silicon; the P traps are arranged at the top end of the N-type epitaxy; the dielectric film areas are positioned above the P traps; surface metal is installed above the dielectric film areas; a contact hole is formed between every two dielectric film areas; each P trench is at least divided into two areas; all the areas are filled with the P-type silicon in different doping concentrations; a P-type film is realized by using a nonuniform impurity distribution mode; the bottom areas of the P trenches are filled with the P-type silicon with the doping concentrations less than or equal to the uniform doping concentration; and the top middle areas of the P trenches are filled with the P-type silicon with the doping concentrations greater than the uniform doping concentration. The invention further discloses a fabrication method of the device structure. The semiconductor device structure can improve current surge resistance of a device in the switch-off process under the condition that specific on resistance of the device is not affected.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Intelligent online remote sewage monitoring system
ActiveCN112253936AImprove monitoring effectEffect of treatmentStands/trestlesGear wheelElectric machinery
Owner:吉林省拓维环保集团股份有限公司
Heat treatment technique of titanium-iron-stainless steel three-layered compound plate
InactiveCN110791637AImprove mechanical propertiesShorten heating timeFurnace typesHeat treatment process controlTitaniumMaterials processing
The invention provides a heat treatment technique of a titanium-iron-stainless steel three-layered compound plate, and belongs to the field of material processing. The heat treatment technique comprises the following steps of directly placing a to-be-treated titanium-iron-stainless steel three-layered compound plate in a preheated heating furnace, heating with the furnace to 450 DEG C to 750 DEG C, and performing heat insulation, wherein the preheating temperature of the heating furnace is 180-220 DEG C, and the heating speed of the heating furnace is 500-550 DEG C / h; and taking out the heat-insulated titanium-iron-stainless steel three-layered compound plate, placing the titanium-iron-stainless steel three-layered compound plate in the air, and naturally cooling to a room temperature, thereby obtaining the heat-treated titanium-iron-stainless steel three-layered compound plate. The production method can effectively control the improvement of different mechanical properties (strength or plasticity) of the titanium-iron-stainless steel three-layered compound plate, can regulate and control different properties according to the application background requirements of different titanium-iron-stainless steel three-layered compound plate products, further increases the yield of the titanium-iron-stainless steel three-layered compound plate product, is low in production cost, and is high in production efficiency.
Owner:SHENYANG POLYTECHNIC UNIV
Metal silicide forming method
ActiveCN110890275AImprove thickness uniformityReduce the degree of diffusionSemiconductor/solid-state device manufacturingSemiconductor devicesDevice materialMetal silicide
The invention provides a metal silicide forming method, and belongs to the technical field of semiconductors. The method comprises the following steps: depositing a metal layer on the surface of a silicon substrate; performing first heat treatment to diffuse metal atoms of the metal layer into the silicon substrate to form a first metal silicide; carrying out second heat treatment to convert the first metal silicide into second metal silicide, wherein the temperature of the first heat treatment is lower than that of the second heat treatment. According to the invention, excessive diffusion ofmetal atoms in the forming process of the metal silicide can be reduced, the thickness uniformity of the metal silicide is improved, the performance of a semiconductor device is improved, and the service life of the semiconductor device is prolonged.
Owner:CHANGXIN MEMORY TECH INC
Semiconductor device and manufacturing method thereof
PendingCN111584634AExcellent electrical propertiesOptimizing the Uniformity of Vertical Doping ConcentrationSemiconductor/solid-state device manufacturingSemiconductor devicesDevice materialTrench gate
The invention discloses a semiconductor device and a manufacturing method thereof. The manufacturing method comprises the steps: forming a drift region on a substrate, and etching a well region trench; obtaining a well region in the well region trench through an epitaxial method; and manufacturing a trench gate structure, a source region and a drain region. According to the semiconductor device and the manufacturing method thereof, the well region is manufactured through etching in an epitaxial mode, so that a well region with uniform doping concentration in the longitudinal direction can be obtained, and the semiconductor device with uniform threshold voltage of a trench gate and a plane gate is obtained. The method is mainly characterized in that the well region is manufactured in an epitaxial mode, the uniformity of the longitudinal doping concentration of the well region is mainly optimized to ensure the consistency of the threshold voltage of the trench gate, so that the electrical property of the device is improved. According to the invention, the advantages of the trench gate can be exerted, and the problem of inconsistent threshold voltages of different parts of the trenchgate can be effectively avoided.
Owner:JOULWATT TECH INC LTD
Composite quaternary hydrogel capable of realizing high solar evaporation rate and preparation method thereof
ActiveCN113024884AEasy to convert and use in situEnhanced water transport capacityGeneral water supply conservationWater/sewage treatmentPolyvinyl alcoholNanoparticle
The invention relates to a composite quaternary hydrogel capable of realizing a high solar evaporation rate. The composite quaternary hydrogel comprises a polyvinyl alcohol gel matrix skeleton, a carbon-based Chinese ink coating layer and a titanium dioxide coating layer, wherein a plurality of gel internal pore channels exist in the polyvinyl alcohol gel matrix skeleton, and the carbon-based Chinese ink coating layer is composed of nanoparticles; the lower surface of the carbon-based Chinese ink coating layer is attached to the upper surface of the polyvinyl alcohol gel matrix skeleton, the upper surface of the carbon-based Chinese ink coating layer is attached to the lower surface of the conformal titanium dioxide coating layer, and the upper surface of the conformal titanium dioxide coating layer is attached to the lower surface of the titanium dioxide coating layer. The composite quaternary hydrogel has the beneficial effects that in-situ conversion and utilization of solar energy are facilitated; the solar seawater evaporation desalination efficiency is improved; the water transport capacity of the gel is effectively enhanced, and the function of stabilizing the carbon-based Chinese ink coating layer is achieved; and the defects that in an existing solar evaporation design, solar energy loss is too large, evaporation energy is too low, and thus the evaporation rate is low are overcome.
Owner:ZHEJIANG ZHENENG TECHN RES INST +1
Array substrate, preparation method thereof and display device
PendingCN112599605AImprove reliabilityReduce the degree of diffusionTransistorSolid-state devicesDisplay deviceThin membrane
The invention discloses an array substrate and a preparation method thereof, and a display device. The array substrate comprises a substrate body, an oxide semiconductor thin film transistor arrangedon the substrate body, comprising an oxide semiconductor active layer comprising a channel region and source and drain regions located on the two sides of the channel region, and a hydrogen-containinglayer in contact with the source and drain regions and being suitable for diffusing hydrogen into the source and drain regions. The array substrate can improve the reliability.
Owner:HEFEI VISIONOX TECH CO LTD
Full-sealed quick sewage discharging system of excrement treatment equipment
InactiveCN112299678ARealize separate processingEfficient use ofSludge treatment by de-watering/drying/thickeningWaste water treatment from animal husbandryControl treatmentPre treatment
The invention relates to the technical field of fecal sewage treatment, in particular to a full-sealed quick sewage discharging system of excrement treatment equipment. The system comprises an excrement comprehensive treatment device, the upstream of the excrement comprehensive treatment device is inserted into an excrement pool through a material suction pipeline, a sewage suction pump is arranged on the material suction pipeline, an excrement concentration treatment device and an excrement purification treatment device are respectively arranged at the downstream of the excrement comprehensive treatment device, the excrement comprehensive treatment device is used for realizing pretreatment of excrement and realizing solid-liquid separation; the excrement concentration treatment device isused for receiving solid excrement separated by the excrement comprehensive treatment device and carrying out secondary treatment, and the excrement purification treatment device is used for receivingliquid excrement separated by the excrement comprehensive treatment device and carrying out secondary treatment. According to the system, a full-sealed control treatment mode is adopted in the earlier-stage treatment process of excrement, and solid and liquid separation treatment of the excrement can be effectively achieved according to needs.
Owner:SHANXIAN SHUNTIAN SPECIAL VEHICLE MFG CO LTD
Semiconductor device and formation method thereof
ActiveCN108573871AImprove stabilityImprove electrical performanceSemiconductor/solid-state device manufacturingSemiconductor devicesWork functionDielectric layer
The invention provides a semiconductor device and a formation method thereof. The method includes providing a substrate; forming an interlayer dielectric layer on the substrate, the interlayer dielectric layer having an opening passing through the interlayer dielectric layer; forming a work function layer on the side wall and at the bottom of the opening; forming a first gate electrode layer located on the work function layer in the opening, the temperature of the technology used for forming the first gate electrode layer being a first temperature; and forming a second gate electrode layer located on the first gate electrode layer in the opening, the temperature of the technology used for forming the second gate electrode layer being a second temperature, and the first temperature being less than the second temperature. The electrical properties of a semiconductor device can be enhanced.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1
Device for measuring spectrum image
ActiveCN100451614CReduce the degree of diffusionIncrease the number ofColor/spectral properties measurementsSpectrometry/spectrophotometry/monochromatorsMeasurement device2d array
The invention reveals a spectrum video measuring device with spatial resolution and spectral resolution, comprising an image telecentric lens for collecting light energy from a sample, a light slot arranged behind the image telecentric lens, an aspherical mirror for collimating a beam from the light slot, a wavelength dispersing component able to disperse the beam into sub-beams of different wavelengths at different outgoing angles, an achromatic lens for focusing the sub-beams, and an optical detecting component for detecting the sub-beams, where the wavelength dispersing component can be a transmitting or reflecting diffraction grating and the optical detecting component can be a 2D array optical detector.
Owner:IND TECH RES INST
Solar cell and preparation method thereof
PendingCN113540264AIncrease the open circuit voltageReduce the chance of defect captureFinal product manufacturePhotovoltaic energy generationCrystal orientationEngineering
The invention discloses a solar cell and a preparation method thereof. The solar cell comprises a semiconductor substrate layer; a first carrier collection film which is located on one side of the semiconductor substrate layer and comprises a first sub-collection film and a second sub-collection film which is located on one side, opposite to the semiconductor substrate layer, of the first sub-collection film, wherein the crystal orientation of the second sub-collection film is different from that of the first sub-collection film; and a first grid line electrode which is positioned on one side, opposite to the semiconductor substrate layer, of the first carrier collection film. The open-circuit voltage of the solar cell is increased.
Owner:宣城睿晖宣晟企业管理中心合伙企业(有限合伙)
Manufacturing method of semiconductor structure and manufacturing equipment of semiconductor structure
PendingCN114765126ARemove completelyReduce heating rateSolid-state devicesSemiconductor/solid-state device manufacturingSemiconductor structurePhysical chemistry
The embodiment of the invention provides a semiconductor structure manufacturing method and semiconductor structure manufacturing equipment, and the semiconductor structure manufacturing method comprises the steps: providing a substrate; forming a patterned photoresist layer on the substrate, and etching the substrate by taking the patterned photoresist layer as a mask; after etching the substrate, carrying out plasma ashing treatment on the patterned photoresist layer and residues generated by etching by adopting a plasma ashing machine; the plasma ashing treatment process is carried out in an oxygen-free environment. According to the embodiment of the invention, the residues on the semiconductor structure can be removed without generating new residues, so that the electrical performance of the semiconductor structure can be improved.
Owner:CHANGXIN MEMORY TECH INC
Semiconductor structures and methods of forming them
ActiveCN108122852BQuality improvementReduce the degree of diffusionTransistorSolid-state devicesGate dielectricSemiconductor structure
A semiconductor structure and its forming method, comprising: providing a substrate, including an N-type logic region, a P-type logic region, and adjacent pull-up transistor regions and pull-down transistor regions; forming a first work function layer on a gate dielectric layer; removing the first work function layer of the N-type logic region and the pull-down transistor region; forming a second work function layer on the remaining first work function layer and the gate dielectric layer; removing the second work function layer of the second N-type threshold voltage region; An N-type work function layer is formed on the remaining second work function layer and the second N-type threshold voltage region. Compared with the scheme of only forming an N-type work function layer in the pull-down transistor region, the second work function layer of the present invention covers the sidewall of the first work function layer at the junction of the pull-up transistor region and the pull-down transistor region, and also covers the second work function layer of the pull-up transistor region. On the top of the first work function layer, the diffusion path of metal ions in the N-type work function layer to the first work function layer in the pull-up transistor region is increased to optimize the electrical performance of the SRAM.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1
Semiconductor structures and methods of forming them
ActiveCN110581102BAvoid lossReduce the degree of diffusionTransistorSolid-state devicesEtchingSemiconductor structure
Owner:SEMICON MFG INT (SHANGHAI) CORP +1
Rapid Annealing Method for Fabricating Tunneling Oxygen Passivation Contact Structure
ActiveCN110165017BExtend body lifeAvoid "exploding film" phenomenonFinal product manufactureSemiconductor devicesTemperature controlChemical physics
The invention provides a rapid annealing method for preparing a tunneling oxygen passivation contact structure. The steps include: (1) preheating: heating the sample to be annealed to 150-250° C. under process gas, and keeping it warm for 1-2 minutes; (2) ) Hydrogen release: then heat up to 300-600°C, keep warm for 3-10min; (3) Crystallization: heat up to 780-1100°C, and keep warm for 1-15min; (4) Cooling: cool down to 600°C in 2-5 minutes the following. The present invention effectively avoids the occurrence of the "burst film" phenomenon through temperature control, and improves the bulk life of the silicon substrate through hydrogen passivation. At the same time, the dopant atoms in the film are also fully activated. , the degree of diffusion of dopant atoms to the silicon substrate is weakened, effectively reducing the surface Auger recombination, improving the surface passivation performance of the tunneling oxygen passivation contact structure, and having a lower contact resistivity, and shortening the annealing time is conducive to improving production Efficiency, increase production capacity, save production cost.
Owner:NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Lignin base skin core structure nanometer/micron fiber and preparation method thereof
ActiveCN102517689BEasy to prepareMild conditionsFilament/thread formingConjugated cellulose/protein artificial filamentsOrganic solventSynthetic Polymeric Macromolecules
Owner:SOUTH CHINA UNIV OF TECH
Negative pressure gastric lavage device for pediatricians
ActiveCN112546325AAvoid pipe blockageSpeed up the replacement rateCannulasEnemata/irrigatorsGastric lavagePediatric Surgeon
The invention belongs to the technical field of medical instruments, and particularly relates to a negative pressure gastric lavage device for pediatricians, which comprises a control mechanism, a connecting mechanism, a stomach tube and a driven mechanism; the control mechanism comprises a control box, an operation panel, a liquid storage tank and a dirty liquid tank; the control box is of a cavity type structure of which the top is fixedly connected with a lifting handle; a first groove is formed in one side of the control box; symmetrically designed positioning rings are fixedly connected to the side, away from the handle, of the first groove; threads are designed on the inner side of the positioning ring; the liquid storage tank and the dirty liquid tank are in threaded engagement connection with the positioning rings; a suction pump and a negative pressure pump are fixedly connected to the position, located above the first groove, of an inner cavity of the control box; the suctionpump and the negative pressure pump are communicated with the liquid storage tank and the dirty liquid tank through catheters. According to the invention, inner tubes and the outer tubes are arranged, the materials of the inner tube and the outer tube are limited, the outer tube with hard texture serves as a main body, so that the stomach tube can be extended to the stomach conveniently, the inner tube with soft texture serves as an infusion tube, and then the probability of tube blockage is reduced.
Owner:YANAN UNIV AFFILIATED HOSPITAL
Semiconductor device and method of forming the same
ActiveCN110034067BLower thermal budgetIncreasing concentration gradientTransistorSolid-state devicesCMOSDevice material
The invention discloses a semiconductor device and a forming method thereof, and the method comprises the steps: providing a semiconductor substrate which comprises a TFET region and a CMOS region; covering the TFET region by adopting a first covering layer, forming a CMOS lightly-doped drain region in the CMOS region under the protection of the first covering layer, and carrying out first annealing process treatment; removing the first covering layer, and forming a TFET grid side wall and a CMOS grid side wall; forming a source-drain doped region in the TFET region and the CMOS region, and carrying out second annealing process treatment; forming a protective layer covering the CMOS region, removing at least one part of the side wall of the TFET gate under the protection of the protectivelayer, and exposing the semiconductor substrate between the TFET gate and the source-drain doped region of the TFET region; and forming a TFET lightly-doped drain region in the TFET region. Accordingto the scheme, the concentration gradient of the junction surface of the lightly-doped drain region of the TFET can be improved, and the tunneling probability and the on-state current of the device are improved.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1
Solar cell and preparation method thereof
InactiveCN113363337AIncrease the open circuit voltageImprove conversion efficiencyFinal product manufacturePhotovoltaic energy generationSolar cellBattery cell
The invention provides a solar cell and a preparation method thereof. The solar cell comprises a semiconductor substrate layer, a first intrinsic semiconductor layer positioned on one side of the semiconductor substrate layer, and a P-type semiconductor layer located on the side, which is back to the semiconductor substrate layer, of the first intrinsic semiconductor layer, wherein the P-type semiconductor layer comprises a first P-type sub-semiconductor film to an Mth P-type sub-semiconductor film which are sequentially stacked in the direction from the semiconductor substrate layer to the first intrinsic semiconductor layer; the concentration of P-type ions in the Mth layer of P-type sub-semiconductor film to the first layer of P-type sub-semiconductor film is gradually reduced in sequence; and M is an integer greater than or equal to 2. The open-circuit voltage and the conversion efficiency of the solar cell are improved.
Owner:宣城睿晖宣晟企业管理中心合伙企业(有限合伙)
Semiconductor device and forming method thereof
PendingCN110729341AFacilitated DiffusionImprove uniformitySemiconductor/solid-state device manufacturingSemiconductor devicesPhysicsThin membrane
The invention discloses a formation method of a semiconductor device. The method comprises the following steps that: a semiconductor substrate and fin parts are provided, wherein the semiconductor substrate comprise a first region and a second region, and the fin parts are correspondingly arranged on the first region and the second region; a first source doped thin film is formed, wherein the first source doped thin film covers the surfaces of the fin parts; an interlayer dielectric layer is formed between the adjacent fin parts; a part of the interlayer dielectric layer and a part of the first source doped thin film are removed, so that the top surfaces of the fin parts are exposed; the fin part on the first region is removed, so that a first groove can be formed; the first source doped film at two sides of the first groove is removed; a second source doped film covering two side walls of the first groove is formed; a first replacement fin part is formed in the first groove; and the interlayer dielectric layer is treated through an annealing process. After ion diffusion, defects formed on the surface of the fin parts can be avoided.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1
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