46results about How to "Reduce the degree of diffusion" patented technology

The invention discloses a preparation method of a lignin base skin core structure nanometer/micron fiber. The preparation method comprises the following steps: (1) by mass, adding one part of mixture of lignin and petroleum base macromolecules into 1-20 parts of organic solvents, and obtaining a lignin mixing solution after evenly mixing and fully dissolving the mixture; adding 1 part of natural or synthetic macromolecules into 4-25 parts of solvents, and obtaining a macromolecule solution after evenly mixing and fully dissolving the natural or synthetic macromolecules; and (2)performing coaxial electric spinning, leading the lignin mixing solution and the macromolecule solution respectively into two layers of a coaxial needle head, and obtaining the lignin base skin core structure nanometer/micron fiber under the effects of 5-100kV high-voltage electrostatic field when the solutions are stably extruded out of the coaxial needle head. The preparation method is simple and moderate in conditions, reduces degree of diffusion of the lignin towards a skin layer simultaneously, and improves continuity and evenness of a core layer material in the fiber.

The invention discloses a method for manufacturing metal-like packing paper, which comprises the following steps sequentially: (1), coating a metal printing ink on the paper base of the packing paper; (2), laminating the surface, which is coated with the metal printing ink, of the paper base of the packing paper with a thin film; and (3), after laminating, drying the metal printing ink, and separating the packing paper from the thin film to obtain the metal-like packing paper. The technical flow of the invention is simple and crafty; the cost is low; and the metal-like packing paper with good surface flatness, high brightness and holographic effect can be obtained.

The invention relates to an electrode system for improving performances of a steel-aluminum dissimilar metal resistance spot welding head. The system comprises a pair of positive electrode and negative electrode, which are arranged oppositely and have different end face structures; the end face of the positive electrode is a ball end face and is in contact with the surface of an aluminum part to be machined; two annular grooves, which are concentrically arranged and have different radiuses, are formed in the ball end face; and the end face of the negative electrode is a fat end face and is in contact with the surface of a steel part to be machined. Compared with the prior art, heat distribution of a steel-aluminum interface can be effectively improved, the growth of an IMC (Intermetallic Compound) on a connector interface is weakened, a stable button breaking mode is obtained, and the reliability of a connector in connection is improved.

The invention belongs to the technical field of dust suppressants for dust prevention in open pit coal mining, coal transportation and stockpiling processes, and discloses a preparation method of a dust suppressant, and a dust prevention method in opencast coal mining and coal transportation. 100% of the dust suppressant is prepared from, by mass, 2-5% of cellulose, 1-3% of sodium lauryl sulfate,2-4% of octadecyl acrylate, 10-15% of acrylamide, 0.05-0.1% of an initiator, 0.02-0.04% of a cross-linking agent, 0.3-0.6% of an anti-freezing agent, and the balance of water. An inhibitor not only can further improve the wettability of the dust suppressant to coal dust, so that water wets and bonds the coal dust to the greatest extent, and greatly reduces the diffusion degree of the dust, but also can play a self-healing role to complete the wrapping and covering of the dust by adding a certain amount of water after the dust bonding layer is broken, thereby improving the dust suppression efficiency and ensuring the long-term dust suppression.

The invention provides a rapid annealing method for preparing a tunneling oxygen passivation contact structure, and the method comprises the following steps: (1) preheating: increasing the temperatureof a sample to be annealed to 150-250 DEG C in process gas, and performing the heat preservation for 1-2min; (2) hydrogen release: increasing the temperature to 300-600 DEG C, and performing heat preservation for 3-10min; (3) crystallization: increasing the temperature to 780-1100 DEG C, and performing heat preservation for 1-15min; (4) cooling: reducing the temperature to 600 DEG C or less within 5 minutes. Through temperature control, the method effectively avoids the phenomenon of film explosion of the sample, and prolongs the body service life of a silicon substrate through hydrogen passivation; meanwhile, doped atoms in a thin film are fully activated; in addition, due to the fact that the annealing time is relatively short, the diffusion degree of doped atoms to the silicon substrate is weakened, the surface auger recombination is effectively reduced, the surface passivation performance of the tunneling oxygen passivation contact structure is improved; meanwhile, the contact resistivity is low; in addition, the annealing time is shortened, the production efficiency is improved, the productivity is improved, and the production cost is saved.

The invention discloses a graphene-silver composite electrode preparation method, and the method comprises the steps: mixing the prepared graphene oxide dispersion liquid and silver nitrate, carrying out the electrophoretic deposition, flushing, stoving, coating, two-segment sintering, and polishing, and obtaining a graphene-silver composite electrode. The graphene-silver composite electrode is used in a high-voltage ceramic capacitor. Compared with a conventional silver electrode, the graphene-silver composite electrode greatly reduces the diffusion degree, and effectively improves the overall voltage resistance of the ceramic capacitor. Moreover, the insulating resistance of the capacitor is large, and the capacitor is not liable to be aged, and is better in application prospect.

The invention discloses an odor monitoring and emergency disposal method for a sensitive area around an organic pollution site, which comprises a wireless monitoring probe system, a monitoring platform system, an early warning alarm system and an odor emergency disposal system which are sequentially and correspondingly arranged, and is characterized in that the wireless monitoring probe system comprises a wireless monitoring device and a wireless monitoring probe, the monitoring platform system comprises an on-line data display screen and an intelligent processing system, and the intelligent analysis system is correspondingly connected with the on-line data display screen and the early warning alarm system. The method solves the problem that the sensitive area monitoring point position isnot timely and effective enough in the repair and treatment construction process of the organic pollution site, dynamically monitors the sensitive area of the project construction site, reduces the influence on the environment and personnel of the sensitive area in the construction process, and further ensures the implementation of engineering and the construction period.

The invention discloses a semiconductor device structure which comprises a substrate, a plurality of P traps and a plurality of dielectric film areas, wherein an N-type epitaxy is grown on the substrate and provided with at least one P trench filled with P-type silicon; the P traps are arranged at the top end of the N-type epitaxy; the dielectric film areas are positioned above the P traps; surface metal is installed above the dielectric film areas; a contact hole is formed between every two dielectric film areas; each P trench is at least divided into two areas; all the areas are filled with the P-type silicon in different doping concentrations; a P-type film is realized by using a nonuniform impurity distribution mode; the bottom areas of the P trenches are filled with the P-type silicon with the doping concentrations less than or equal to the uniform doping concentration; and the top middle areas of the P trenches are filled with the P-type silicon with the doping concentrations greater than the uniform doping concentration. The invention further discloses a fabrication method of the device structure. The semiconductor device structure can improve current surge resistance of a device in the switch-off process under the condition that specific on resistance of the device is not affected.

The invention discloses an intelligent online remote sewage monitoring system, and relates to the technical field of sewage treatment. The intelligent online remote sewage monitoring system comprisesa frame, the upper surface of the frame is provided with a first sliding groove, a first sliding block is slidably connected in the first sliding groove, and the upper surface of the first sliding block is fixedly provided with a displacement adjusting mechanism; and a detection mechanism is fixedly mounted at the outer side of the displacement adjusting mechanism. According to the intelligent online remote sewage monitoring system, by arranging the displacement adjusting mechanism, when a first motor works, the first motor can drive a first reciprocating lead screw to rotate, and at the moment, a first lead screw seat can move front and back, so that a detector can move front and back to detect sewage; and when a first gear sleeves the outer side of a fixing shaft and is meshed with a rack, a second motor works, the second motor can drive a second reciprocating lead screw to rotate through a second rotating shaft, at the moment, a second lead screw seat can move up and down to adjustthe position of the detector, and at the moment, the detector can detect data of the sewage of different depths, so that the monitoring effect is further improved.

The invention provides a heat treatment technique of a titanium-iron-stainless steel three-layered compound plate, and belongs to the field of material processing. The heat treatment technique comprises the following steps of directly placing a to-be-treated titanium-iron-stainless steel three-layered compound plate in a preheated heating furnace, heating with the furnace to 450 DEG C to 750 DEG C, and performing heat insulation, wherein the preheating temperature of the heating furnace is 180-220 DEG C, and the heating speed of the heating furnace is 500-550 DEG C/h; and taking out the heat-insulated titanium-iron-stainless steel three-layered compound plate, placing the titanium-iron-stainless steel three-layered compound plate in the air, and naturally cooling to a room temperature, thereby obtaining the heat-treated titanium-iron-stainless steel three-layered compound plate. The production method can effectively control the improvement of different mechanical properties (strength or plasticity) of the titanium-iron-stainless steel three-layered compound plate, can regulate and control different properties according to the application background requirements of different titanium-iron-stainless steel three-layered compound plate products, further increases the yield of the titanium-iron-stainless steel three-layered compound plate product, is low in production cost, and is high in production efficiency.

The invention provides a metal silicide forming method, and belongs to the technical field of semiconductors. The method comprises the following steps: depositing a metal layer on the surface of a silicon substrate; performing first heat treatment to diffuse metal atoms of the metal layer into the silicon substrate to form a first metal silicide; carrying out second heat treatment to convert the first metal silicide into second metal silicide, wherein the temperature of the first heat treatment is lower than that of the second heat treatment. According to the invention, excessive diffusion ofmetal atoms in the forming process of the metal silicide can be reduced, the thickness uniformity of the metal silicide is improved, the performance of a semiconductor device is improved, and the service life of the semiconductor device is prolonged.

The invention discloses a semiconductor device and a manufacturing method thereof. The manufacturing method comprises the steps: forming a drift region on a substrate, and etching a well region trench; obtaining a well region in the well region trench through an epitaxial method; and manufacturing a trench gate structure, a source region and a drain region. According to the semiconductor device and the manufacturing method thereof, the well region is manufactured through etching in an epitaxial mode, so that a well region with uniform doping concentration in the longitudinal direction can be obtained, and the semiconductor device with uniform threshold voltage of a trench gate and a plane gate is obtained. The method is mainly characterized in that the well region is manufactured in an epitaxial mode, the uniformity of the longitudinal doping concentration of the well region is mainly optimized to ensure the consistency of the threshold voltage of the trench gate, so that the electrical property of the device is improved. According to the invention, the advantages of the trench gate can be exerted, and the problem of inconsistent threshold voltages of different parts of the trenchgate can be effectively avoided.

The invention discloses an array substrate and a preparation method thereof, and a display device. The array substrate comprises a substrate body, an oxide semiconductor thin film transistor arrangedon the substrate body, comprising an oxide semiconductor active layer comprising a channel region and source and drain regions located on the two sides of the channel region, and a hydrogen-containinglayer in contact with the source and drain regions and being suitable for diffusing hydrogen into the source and drain regions. The array substrate can improve the reliability.

The invention relates to the technical field of fecal sewage treatment, in particular to a full-sealed quick sewage discharging system of excrement treatment equipment. The system comprises an excrement comprehensive treatment device, the upstream of the excrement comprehensive treatment device is inserted into an excrement pool through a material suction pipeline, a sewage suction pump is arranged on the material suction pipeline, an excrement concentration treatment device and an excrement purification treatment device are respectively arranged at the downstream of the excrement comprehensive treatment device, the excrement comprehensive treatment device is used for realizing pretreatment of excrement and realizing solid-liquid separation; the excrement concentration treatment device isused for receiving solid excrement separated by the excrement comprehensive treatment device and carrying out secondary treatment, and the excrement purification treatment device is used for receivingliquid excrement separated by the excrement comprehensive treatment device and carrying out secondary treatment. According to the system, a full-sealed control treatment mode is adopted in the earlier-stage treatment process of excrement, and solid and liquid separation treatment of the excrement can be effectively achieved according to needs.

The invention reveals a spectrum video measuring device with spatial resolution and spectral resolution, comprising an image telecentric lens for collecting light energy from a sample, a light slot arranged behind the image telecentric lens, an aspherical mirror for collimating a beam from the light slot, a wavelength dispersing component able to disperse the beam into sub-beams of different wavelengths at different outgoing angles, an achromatic lens for focusing the sub-beams, and an optical detecting component for detecting the sub-beams, where the wavelength dispersing component can be a transmitting or reflecting diffraction grating and the optical detecting component can be a 2D array optical detector.

The invention discloses a solar cell and a preparation method thereof. The solar cell comprises a semiconductor substrate layer; a first carrier collection film which is located on one side of the semiconductor substrate layer and comprises a first sub-collection film and a second sub-collection film which is located on one side, opposite to the semiconductor substrate layer, of the first sub-collection film, wherein the crystal orientation of the second sub-collection film is different from that of the first sub-collection film; and a first grid line electrode which is positioned on one side, opposite to the semiconductor substrate layer, of the first carrier collection film. The open-circuit voltage of the solar cell is increased.

The embodiment of the invention provides a semiconductor structure manufacturing method and semiconductor structure manufacturing equipment, and the semiconductor structure manufacturing method comprises the steps: providing a substrate; forming a patterned photoresist layer on the substrate, and etching the substrate by taking the patterned photoresist layer as a mask; after etching the substrate, carrying out plasma ashing treatment on the patterned photoresist layer and residues generated by etching by adopting a plasma ashing machine; the plasma ashing treatment process is carried out in an oxygen-free environment. According to the embodiment of the invention, the residues on the semiconductor structure can be removed without generating new residues, so that the electrical performance of the semiconductor structure can be improved.

The invention belongs to the technical field of medical instruments, and particularly relates to a negative pressure gastric lavage device for pediatricians, which comprises a control mechanism, a connecting mechanism, a stomach tube and a driven mechanism; the control mechanism comprises a control box, an operation panel, a liquid storage tank and a dirty liquid tank; the control box is of a cavity type structure of which the top is fixedly connected with a lifting handle; a first groove is formed in one side of the control box; symmetrically designed positioning rings are fixedly connected to the side, away from the handle, of the first groove; threads are designed on the inner side of the positioning ring; the liquid storage tank and the dirty liquid tank are in threaded engagement connection with the positioning rings; a suction pump and a negative pressure pump are fixedly connected to the position, located above the first groove, of an inner cavity of the control box; the suctionpump and the negative pressure pump are communicated with the liquid storage tank and the dirty liquid tank through catheters. According to the invention, inner tubes and the outer tubes are arranged, the materials of the inner tube and the outer tube are limited, the outer tube with hard texture serves as a main body, so that the stomach tube can be extended to the stomach conveniently, the inner tube with soft texture serves as an infusion tube, and then the probability of tube blockage is reduced.

The invention discloses a formation method of a semiconductor device. The method comprises the following steps that: a semiconductor substrate and fin parts are provided, wherein the semiconductor substrate comprise a first region and a second region, and the fin parts are correspondingly arranged on the first region and the second region; a first source doped thin film is formed, wherein the first source doped thin film covers the surfaces of the fin parts; an interlayer dielectric layer is formed between the adjacent fin parts; a part of the interlayer dielectric layer and a part of the first source doped thin film are removed, so that the top surfaces of the fin parts are exposed; the fin part on the first region is removed, so that a first groove can be formed; the first source doped film at two sides of the first groove is removed; a second source doped film covering two side walls of the first groove is formed; a first replacement fin part is formed in the first groove; and the interlayer dielectric layer is treated through an annealing process. After ion diffusion, defects formed on the surface of the fin parts can be avoided.