Solar cell and preparation method thereof

A technology of solar cells and semiconductors, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of open circuit voltage and low conversion efficiency of solar cells

Inactive Publication Date: 2021-09-07
宣城睿晖宣晟企业管理中心合伙企业(有限合伙)
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Therefore, the technical problem to be solved in the present invention is to overcome the problems of low open circuit voltage and conversion efficiency of solar cells in the prior art, thereby providing a solar cell and its preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar cell and preparation method thereof
  • Solar cell and preparation method thereof
  • Solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0043] On this basis, the present invention provides a kind of preparation method of solar cell, please refer to Figure 9 , including the following steps:

[0044] S1: Provide a semiconductor substrate layer;

[0045] S2: forming a first intrinsic semiconductor layer on one side of the semiconductor substrate layer;

[0046] S3: Forming a P-type semiconductor layer, the step of forming the P-type semiconductor layer includes: sequentially forming the first P-type sub-semiconductor film to the first layer on the side of the first intrinsic semiconductor layer facing away from the semiconductor substrate layer M layers of P-type sub-semiconductor films; the concentration of P-type ions in the M-th layer of P-type sub-semiconductor film to the first layer of P-type sub-semiconductor films decreases successively; M is an integer greater than or equal to 2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a solar cell and a preparation method thereof. The solar cell comprises a semiconductor substrate layer, a first intrinsic semiconductor layer positioned on one side of the semiconductor substrate layer, and a P-type semiconductor layer located on the side, which is back to the semiconductor substrate layer, of the first intrinsic semiconductor layer, wherein the P-type semiconductor layer comprises a first P-type sub-semiconductor film to an Mth P-type sub-semiconductor film which are sequentially stacked in the direction from the semiconductor substrate layer to the first intrinsic semiconductor layer; the concentration of P-type ions in the Mth layer of P-type sub-semiconductor film to the first layer of P-type sub-semiconductor film is gradually reduced in sequence; and M is an integer greater than or equal to 2. The open-circuit voltage and the conversion efficiency of the solar cell are improved.

Description

technical field [0001] The invention relates to the technical field of photovoltaic high-efficiency cells, in particular to a solar cell and a preparation method thereof. Background technique [0002] Solar cells are a kind of clean energy cells, and solar cells are widely used in life and production. The heterojunction solar cell is an important solar cell. The heterojunction (HeteroJunction with intrinsic Thinlayer, HJT) structure is centered on the N-type silicon substrate, and the P-type hydrogenated amorphous silicon and N-type hydrogenated amorphous silicon A layer of intrinsic hydrogenated amorphous silicon film is added between the N-type silicon substrate. After taking this process measure, the performance of the PN junction is changed, thereby improving the conversion efficiency of the heterojunction solar cell. In addition, heterojunction solar cells have the characteristics of good temperature coefficient, double-sided power generation, low process temperature, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0256H01L31/0747H01L31/20
CPCH01L31/0256H01L31/0747H01L31/202Y02P70/50Y02E10/50
Inventor 不公告发明人
Owner 宣城睿晖宣晟企业管理中心合伙企业(有限合伙)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap