This disclosure provides a
semiconductor device and a method for forming the same, relating to the field of
semiconductor technology. The method includes: providing a substrate; forming a
metal layer on the substrate, the
metal layer including a plurality of spaced conductive portions; sequentially forming an insulating layer and a
mask layer on the
metal layer, the
mask layer including a plurality of
mask patterns, the
orthographic projection of the mask patterns on the substrate covering the
orthographic projection of the conductive portions on the substrate;
etching the insulating layer through the
mask layer to form trenches exposing the conductive portions; and removing the
mask layer using an
oxygen-free stripping gas. The
semiconductor device formation method provided by this disclosure, by
etching the insulating layer through the
mask layer to form trenches exposing the conductive portions, and by using an
oxygen-free stripping gas to remove the mask layer, avoids oxidation of the metal layer caused by the stripping gas during mask
layer removal, thereby solving the problem of poor connection due to oxidation of metal wires.