The invention relates to a transistor. A lowly-doped drain region is arranged in a barrier layer of the transistor. Due to the difference in electronegativity between the lowly-doped drain region and the region in the barrier layer except the lowly-doped drain region, the lowly-doped drain region can help adjust the two-dimensional electron gas in the barrier layer, change the electric field intensity of a depletion layer under a gate in the barrier layer, make the electric field re-distributed, reduce the peak of the electric field, reduce the trap effect, and improve the breakdown voltage. Meanwhile, a field plate is introduced, the bending degree of the boundary of the depletion layer at the edge of the gate is reduced, electric field distribution is modulated, the peak of the electric field is reduced, the trap effect is reduced, and the breakdown voltage is further improved. Under the joint action of the lowly-doped drain region and the field plate, the breakdown voltage of the transistor is improved greatly, and the working stability of the transistor is increased.