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Design method of trap type dual-phonon active region energy level structure in terahertz quantum cascade laser

A technology of quantum cascade and design method, applied in the structure of active area, lasers, semiconductor lasers, etc., can solve problems such as leakage and thermal excitation, achieve improved output characteristics, good laser particle number inversion, and improved temperature characteristics and the effect of the output feature

Active Publication Date: 2018-11-30
SOUTH CHINA NORMAL UNIVERSITY
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Problems solved by technology

[0006] The purpose of the present invention is to provide a design method for the energy level structure of the trap-type two-phonon active region in a terahertz quantum cascade laser. The method uses Schrödinger to solve the quantum well energy level theory for calculation, so as to determine the accuracy of the energy level position , can solve the problem of thermal excitation and thermal leakage of electrons caused by excessive temperature in terahertz quantum cascade lasers, so as to obtain higher laser operating temperature and output characteristics

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  • Design method of trap type dual-phonon active region energy level structure in terahertz quantum cascade laser
  • Design method of trap type dual-phonon active region energy level structure in terahertz quantum cascade laser
  • Design method of trap type dual-phonon active region energy level structure in terahertz quantum cascade laser

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Embodiment Construction

[0046] The method for designing the energy level structure of the trap-type two-phonon active region in the terahertz quantum cascade laser of the present invention comprises the following steps:

[0047] (1) Design the well width and barrier width of one period of the active region of the terahertz quantum cascade laser;

[0048] The specific process of step (1) is as follows:

[0049]The active region of the present invention is based on a terahertz quantum cascade laser emitting light at a frequency of 6.77 terahertz, and a corresponding period active region of the present invention consists of 4 GaN quantum wells and 4 Al0.15Ga0.85N potential barriers , the layer thickness is: 2.5 / 0.9 / 0.6 / 0.8 / 2.4 / 1.9 / 1.7 / 1.8 , the unit is nanometers, where the underlined numbers represent potential barriers. The width and barrier thickness of each quantum well in the active region are as follows figure 1 shown.

[0050] (2) Solve the energy level of the active region through ...

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Abstract

The invention discloses a design method of a trap type dual-phonon active region energy level structure in a terahertz quantum cascade laser. The design method comprises the following steps of (1) designing a well width barrier width of one period of an active region of the terahertz quantum cascade laser; (2) solving the energy level of the active region through a schrodinger equation, and determining whether the energy level distributions satisfies the design requirements or not; and (3) solving an active region rate equation, and obtaining the output characteristic of the active region of the laser, and therefore, the design feasibility is verified. According to the method, the quantum well energy level theory is calculated by using schrodinger, so that the accuracy of the energy levelposition is determined, so that the problems of thermal excitation and thermal leakage caused by too high temperature of electrons in the terahertz quantum cascade laser can be solved, and higher operation temperature and the output characteristic of the laser can be obtained.

Description

technical field [0001] The invention relates to the design of the energy level structure of the active region in the terahertz quantum cascade laser, and specifically refers to the design method of the energy level structure of the trap type two-phonon active region in the terahertz quantum cascade laser. Background technique [0002] Before the mid-1980s, the development of infrared and microwave technologies on both sides of the terahertz band was relatively mature, but people's understanding of the terahertz band was still very limited, forming the so-called "terahertz trench". Compared with the adjacent millimeter-wave and infrared spectral ranges, the terahertz frequency range has remained relatively undeveloped, mainly due to the lack of effective sources of radiation. [0003] Terahertz quantum cascade laser is one of the effective ways to obtain terahertz waves. It is a new type of unipolar semiconductor device based on the principle of conduction band subband and ph...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/34
CPCH01S5/3401
Inventor 陈长水李金锋王腾飞周文辉莘杰
Owner SOUTH CHINA NORMAL UNIVERSITY
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