Design method of trap type dual-phonon active region energy level structure in terahertz quantum cascade laser
A technology of quantum cascade and design method, applied in the structure of active area, lasers, semiconductor lasers, etc., can solve problems such as leakage and thermal excitation, achieve improved output characteristics, good laser particle number inversion, and improved temperature characteristics and the effect of the output feature
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[0046] The method for designing the energy level structure of the trap-type two-phonon active region in the terahertz quantum cascade laser of the present invention comprises the following steps:
[0047] (1) Design the well width and barrier width of one period of the active region of the terahertz quantum cascade laser;
[0048] The specific process of step (1) is as follows:
[0049]The active region of the present invention is based on a terahertz quantum cascade laser emitting light at a frequency of 6.77 terahertz, and a corresponding period active region of the present invention consists of 4 GaN quantum wells and 4 Al0.15Ga0.85N potential barriers , the layer thickness is: 2.5 / 0.9 / 0.6 / 0.8 / 2.4 / 1.9 / 1.7 / 1.8 , the unit is nanometers, where the underlined numbers represent potential barriers. The width and barrier thickness of each quantum well in the active region are as follows figure 1 shown.
[0050] (2) Solve the energy level of the active region through ...
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