Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method of manufacturing electron gas back barrier gallium nitride heterojunction field effect transistor

A heterojunction field effect, electronic gas technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as reducing the series resistance of the outer channel, eliminate large thermal resistance, improve reliability, expand Application-wide effects

Active Publication Date: 2018-07-20
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, the high Al composition ratio barrier reduces the series resistance of the outer channel

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Consider the most commonly used AlGaN / GaN heterojunction trench wells. The Al0.35Ga0.65N barrier layer with a relatively high Al composition is selected to increase the cutting force of the trench energy band. Taking the thickness of the inner channel layer as 15nm, self-consistently solving the Poisson equation and the Schrödinger equation, the channel electron gas density is 9.48*1012cm-2, and the pinch-off voltage is -3.2V. Selecting a 30nm thick outer channel barrier layer, the obtained electron gas density is 1.245*1013cm-2, and there is still an electron gas density of 7.16*1012cm-2 in the channel under the -3.2V gate voltage when the inner channel is pinched off , the outer channel is only pinched off at the gate voltage of -7.7V. The difference in electron gas density between the inner and outer channels makes the outer channel still have a strong electron gas back barrier when the inner channel is pinched off. Under a strong electric field gradient of 3*1011V...

Embodiment 2

[0021] Consider using AlN intercalation layer to improve the electron mobility of AlGaN / GaN heterojunction channel well. The 10nmAl0.35Ga0.65N / 1nmAlN barrier layer is selected to construct the inner channel heterojunction. Self-consistently solving Poisson's equation and Schrödinger's equation, the channel electron gas density is 1.15*1013cm-2, and the pinch-off voltage is -3V. The outer channel barrier layer of 25nmAl0.35Ga0.65N / 1nmAlN is selected, and the obtained electron gas density is 1.37*1013cm-2, and there is still 8.12*1012cm-2 in the outer channel under the -3V gate voltage when the inner channel is pinched off. With an electron gas density of 2, the outer channel is only pinched off at a gate voltage of -7.6V. The difference in electron gas density between the inner and outer channels makes the outer channel still have a strong electron gas back barrier when the inner channel is pinched off. Under a strong electric field gradient of 3*1011V / cm2, the electron gas d...

Embodiment 3

[0023] Consider AlInN / GaN lattice-matched high Al composition ratio heterojunction channel wells. 5nmAl0.83In0.17N / 1nmAlN barrier layer is selected to construct the inner channel heterojunction. Self-consistently solving Poisson's equation and Schrödinger's equation, the channel electron gas density is 2.72*1013cm-2, and the pinch-off voltage is -4V. The outer channel barrier layer of 15nmAl0.83In0.17N / 1nmAlN is selected, and the obtained electron gas density is 3.26*1013cm-2, and the inner channel pinch-off is still 1.95*1013cm-2 in the channel under the gate voltage of -4V The electron gas density is high, and the outer channel is only pinched off at a gate voltage of -10.6V. The difference in electron gas density between the inner and outer channels makes the outer channel still have a strong electron gas back barrier when the inner channel is pinched off. Under the strong electric field gradient of 3*1011V / cm2, the electron gas density of the outer channel increases, and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention is a method for manufacturing an electron gas back barrier gallium nitride heterojunction field effect transistor, which is characterized in that different heterojunctions are independently designed for the inner channel under the gate electrode of the field effect transistor and the outer channel outside the gate electrode. The material structure keeps sufficient electron gas density in the outer channel under large RF gate voltage fluctuations, uses electron negative charges to generate a back potential barrier, and suppresses energy band distortion and channel blockage of the outer channel during the RF operation of the device. Then the barrier layer is thinned to form an inner channel heterojunction, and the control of the gate electrode to the conductance of the inner channel is improved to realize efficient radio frequency operation. By self-consistently solving the two-dimensional Poisson equation and the Schrödinger equation to study the interaction between the inner and outer channels, and to suppress the energy band distortion and current collapse in the radio frequency operation of the device. Balance the electric field distribution of the inner and outer channels and increase the breakdown voltage.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing an electron gas back barrier gallium nitride heterojunction field effect transistor. Specifically, a nitride heterostructure with high electron gas density is fabricated by the energy band tailoring method as the outer channel outside the gate electrode, and then the barrier layer under the gate electrode is thinned by the trenching method to form a high transconductance inner channel. channel heterojunction, so that the outer channel still retains enough electron gas to form a back potential barrier under the high negative gate voltage in the RF operation of the device, strengthens the quantum confinement of the outer channel, and suppresses the outer channel in the large-signal RF operation The energy band is distorted, the outer channel is eliminated, the current collapse is weakened, and the method is used to manufacture high-effici...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/335
CPCH01L29/66462
Inventor 薛舫时
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com