Bilinear doping drainage heterogeneous material gate oxide layer graphene tunneling field-effect transistor

Abstract

The invention discloses a bilinear doping drainage heterogeneous material gate oxide layer graphene tunneling field-effect transistor (DL-HTFETs). The field-effect transistor undergoes P/N type heavy doping at a source region and a drain region, linear doping is carried out on regions, close to a channel, of the source end and the drain end, an oxidation layer close to a source electrode is formed by low-K oxide (SiO2), the oxidation layer close to a drain layer is formed by high-K oxide (HfO2), a conveying model of the novel bilinear doping drainage heterogeneous material gate oxide layer graphene tunneling field-effect transistor is built by means of a quantum mechanics model, and electrical properties of a high-K tunneling field-effect transistor (HK-TFETs), a common gate oxide tunneling field-effect transistor (LK-TFETs), a heterogeneous oxide tunneling field-effect transistor (HTFETs), a common filed-effect transistor and the DL-HTFETs are compared and analyzed by means of the model. As is shown by a research result, the DL-HTFETs have the advantages of low leakage currents, a high current switch ratio, low power consumption and short delay time and the like.

Description

technical field [0001] The invention belongs to the field of graphene tunneling field effect transistors and relates to a structural device suitable for graphene devices. Background technique [0002] In recent years, the appearance of graphene has stirred up huge waves in the scientific community, and it is considered to be one of the most promising carbon nanomaterials in the future due to its superior properties. Graphene has high electron mobility and high conductivity. Transistors made of graphene are not only small in size, low in power consumption, and low in requirements for the working environment, but also easy to design into various structures. However, since graphene is a zero-bandgap material, its Fermi energy is lightly distributed, so it is not suitable for direct application in transistors. However, the band gap can be generated by cutting graphene into strips in a certain direction [HAN M Y, OZYILMAZ B, KIM P, et al. Energy band-gap engineering of graphene ...

AI Technical Summary

Problems solved by technology

[0005] As the metal-oxide-semiconductor field effect transistor (Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET) gate length shrinks below 45nm, the subthreshold swing (Subthreshold Swing, SS) seriously affects the switching rate of the MOSFET device at the corresponding gate voltage, causing the leakage current of the MOSFET to increase exponentially with the decrease of the power supply voltage, so that the static power consumption increases exponentially

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