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The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal-oxide-semiconductor field-effect transistor (MOSFET), the fundamental switching mechanism differs, making this device a promising candidate for low power electronics. TFETs switch by modulating quantum tunneling through a barrier instead of modulating thermionic emission over a barrier as in traditional MOSFETs.
Memory device including ferroelectric tunnel field-effect transistor and method of operating thereof
According to one embodiment of the present invention, a method of operation of a memory device comprising a plurality of word lines, a plurality of bit lines, and a plurality of memory cells connected to a plurality of source lines comprises: a step of applying a first voltage to a selected word line connected to a selected memory cell among a plurality of word lines; a step of applying a second voltage to a selected bit line connected to a selected memory cell among a plurality of bit lines; and a step of applying a ground voltage to a plurality of source lines, non-selected word lines among a plurality of word lines, and non-selected bit lines among a plurality of bit lines, wherein the first voltage is greater than the ground voltage and the second voltage is less than the ground voltage, and each of the plurality of memory cells includes a ferroelectric tunnel field-effect transistor (FeTFET) element.
Owner:SAMSUNG ELECTRONICS CO LTD +1