Biosensor based on silicon nanowire tunneling field effect transistor and manufacturing method of biosensor
A technology of tunneling field effect and biosensor, which is applied in the field of biosensor and its preparation based on silicon nanowire tunneling field effect transistor, which can solve the problem of insensitivity to channel surface charge change and achieve steep subthreshold slope, The effect of sensitive and high-sensitivity detection of channel surface charge changes
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Embodiment 1
[0052] The invention provides a method for preparing a biosensor based on a silicon nanowire tunneling field-effect transistor, and the method for preparing the biosensor at least includes the following steps:
[0053] Step 1, preparing a tunneling field effect transistor with a silicon nanowire channel as a converter;
[0054] Step 2, using a surface modifier to activate and modify the surface of the silicon nanowire channel.
[0055] The preparation method of the silicon nanowire tunneling field-effect transistor-based biosensor provided by the present invention will be described in detail below with reference to specific drawings.
[0056] First, step 1 is performed to prepare a tunneling field effect transistor with a silicon nanowire channel as a converter;
[0057] The specific process of preparing the silicon nanowire tunneling field effect transistor is as follows:
[0058] 1) An SOI substrate is provided, and the SOI substrate includes a top silicon layer, a buried ...
Embodiment 2
[0077] The present invention also provides a biosensor based on a silicon nanowire tunneling field-effect transistor, which is made by using the preparation method provided in Embodiment 1. The biosensor based on a silicon nanowire tunneling field-effect transistor at least includes:
[0078] The converter is a tunneling field effect transistor with a nanowire channel;
[0079] The surface modifier covers the surface of the channel.
[0080] Preferably, the silicon nanowire tunneling field effect transistor at least includes:
[0081] Bottom silicon 13;
[0082] The buried oxide layer 12 is bonded to the surface of the underlying silicon 13;
[0083] a nanowire channel 4 formed on the buried oxide layer 12;
[0084] a source electrode 3 and a drain electrode 2 formed on the buried oxide layer 12 and at both ends of the nanowire channel 4;
[0085] a gate dielectric layer 5 formed on the surface of the nanowire channel 4;
[0086] The back gate 6 is formed on the back side...
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