Double material gate nanowire tunneling field effect device and manufacturing method thereof

Abstract

The invention relates to a bi-material railing nanowire tunneling field effect device and a manufacturing method thereof. According to the bi-material railing nanowire tunneling field effect device, a channel is arranged at the center, and a source region and a drain region are respectively arranged at two ends, and an oxide and a gate electrode are covered at the periphery of the channel in sequence. The manufacturing method comprises the steps: SF6 etching a silicon column on a silicon wafer by using a round silicon nitride hard mask; conducting high-temperature oxidation, corroding and reducing the size of the silicon column to be a set diameter value of 6nm-30nm with HF aqueous solution, and conducting high-temperature oxidation to form a silicon column coated by an oxidation layer with set thickness; completing the preparation of a bi-material railing structure by adopting deposition and photoetching technology; and injecting boron and phosphorus of 1*10<20>cm<-2> / 10keV and 5*10<18>cm<-2> / 10keV at 120-150 DEG C respectively, and annealing at 900 DEG C / 10s-1100 DEG C / 10s to prepare the source region and the drain region; completing preparation of a metal electrode by CMOS (Complementary Metal-Oxide-Semiconductor) process; and manufacturing the bi-material railing nanowire tunneling field effect device.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit application devices, in particular to a double-material gate nanowire tunneling field effect device and a manufacturing method thereof. Background technique [0002] In recent years, with the continuous shrinking of device size, traditional metal oxide semiconductor field effect devices have encountered bottlenecks such as short channel effects, and further development has been limited. In order to improve the overall performance of devices, researchers have proposed a variety of new devices based on different working principles. Among them, tunneling field effect devices have attracted much attention because of their excellent subthreshold characteristics and very low leakage current. In order to make better use of the performance advantages of tunneling devices, the tunneling mechanism is applied to different device structures, and the characteristics of the new device structure a...

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Problems solved by technology

Its disadvantage is that the double-gate MOS transistor does not reduce the sub-threshold slope when the device is in operation, thereby increasing the speed of the device and reducing the static power consumption, but by applying dynamic and multi-threshold voltage control, the main gate and auxiliary gate Different bias voltages are used, and the voltage of the auxiliary gate needs to be adjusted according to whether the circuit is in the working state or idle state. Therefore, it is necessary to separate the main gate and the auxiliary gate by a dielectric layer, which greatly increases the complexity of the device structure. , thus increasing the process cost of the device

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