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Transistor, display substrate, display device and manufacturing method thereof

A technology of transistors and structures, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as high power consumption, the ability to degrade the display state of pixels, and adverse effects on product performance, so as to reduce off-state leakage current, Performance-enhancing effects

Active Publication Date: 2018-06-29
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in real-world scenarios, switching elements always have a certain off-state leakage current, which may adversely affect product performance
For example, a transistor is used in a display device to control the writing and holding of display data in each pixel. The leakage current of the transistor in the off state will make the pixel unable to maintain the display state for a long time, so that the display device must refresh the screen at a certain frequency or more. Make display products have high power consumption when displaying static images
Moreover, the existence of the off-state leakage current will also deteriorate the ability of the pixel to maintain the display state in each display frame, resulting in a decrease in the display quality of the picture

Method used

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  • Transistor, display substrate, display device and manufacturing method thereof
  • Transistor, display substrate, display device and manufacturing method thereof
  • Transistor, display substrate, display device and manufacturing method thereof

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Embodiment Construction

[0060]In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present disclosure, not all of them. Based on the described embodiments of the present disclosure, all other embodiments obtained by persons of ordinary skill in the art without creative effort fall within the protection scope of the present disclosure. Unless otherwise defined, the technical terms or scientific terms used in the present disclosure shall have the usual meanings understood by those skilled in the art to which the present disclosure belongs. "First", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Comprising" or similar words mean t...

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PUM

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Abstract

The invention provides a transistor, a display substrate, a display device and a manufacturing method thereof, and belongs to the field of semiconductors. The transistor comprises a semiconductor structure; the semiconductor structure comprises: a source region, a drain region, a channel region and a capture region, wherein the channel region is located between the source region and the drain region and is constructed as a carrier migration passage between the source region and the drain region in the on-state of the transistor; and the capture region is at least partially embedded in the channel region and is constructed to capture carriers migrating between the source region and the drain region in the off-state of the transistor. Based on the design of embedding the capture region intothe channel region, in the invention, the migration carrier of the off-state leakage current can be restrained by using the capture region, thus the off-state leakage current of the transistor can bereduced, and the performance of relevant devices and products is enhanced.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, in particular to a transistor, a display substrate, a display device and a manufacturing method thereof. Background technique [0002] An ideal switching element should have an infinite switching resistance in the off state, resulting in zero leakage current between the switching contacts. However, in real-world scenarios, switching elements inevitably have a certain off-state leakage current, which may adversely affect product performance. For example, a transistor is used in a display device to control the writing and holding of display data in each pixel. The leakage current of the transistor in the off state will make the pixel unable to maintain the display state for a long time, so that the display device must refresh the screen at a certain frequency or more. This makes display products have high power consumption when displaying static images. Moreover, the existence of the off-st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/10H01L29/786H01L21/336
CPCH01L29/0638H01L29/1054H01L29/66765H01L29/78669H01L29/78696H01L29/78678H01L29/78618H01L29/66969H01L29/78609H01L29/6675H01L29/78663
Inventor 王骏黄中浩赵永亮林承武
Owner BOE TECH GRP CO LTD
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