64results about How to "Avoid tunneling" patented technology

The invention relates to a multilayer gentle dip thin-medium ore deposit filling and mining method. According to the technical scheme, the method comprises the following steps: dividing ore blocks, arranging mining and cutting projects, transporting, mining and filling. The step of dividing an ore deposit comprises the following sub-steps: dividing an ore body in the stage into a disc area, tunneling to uphill (2) at the bottom of an ore layer (1) along the inclined direction of the ore body, dividing the ore body on two sides into ore chambers (15) and ore columns (14) along the uphill (2), and reserving uphill ore columns (18) by taking the uphill (2) as the center. Three-step recovery is adopted in the disc area and comprises a first step of recovering the ore chambers (15), a second step of recovering the ore columns (14) and a third step of recovering the uphill ore columns (18); after the ore chambers (15) or the ore columns (14) are totally recovered, a goaf area (11) is downwards filled through the uphill (2) on the upper layer and via filling ventilation holes (10) communicated with a stope; finally, the uphill ore columns (18) are recovered within three steps from bottom to top along the uphill (2) by taking the disc area as a unit, and the uphill ore columns (18) in the next disc area are recovered after filling. The method has the characteristics of high mining intensity, high ore recovery rate, low ore dilution ratio and low mining cost.

A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.

The present invention relates to a semiconductor power device and power integrated circuits (ICs). The lateral SOI MOSFET in the present comprises a trench gate extended to the dielectric buried layer, one or multiple dielectric trenches in the drift region, and a buried gate in said dielectric trench. The permittivity of the dielectric in said dielectric trench is lower than that of said active layer. Firstly, said dielectric trench not only greatly improves breakdown voltage, but also reduces pitch size. Secondly, the trench gate widens the effective conductive region in the vertical direction. Thirdly, dual gates of said trench gate and buried gate increase channel and current densities. Thereby, specific on-resistance and the power loss are reduced. The device of the present invention has many advantages, such as high voltage, high speed, low power loss, low cost and ease of integration. The device in the present invention is particularly suitable for power integrated circuits and RF power integrated circuits.

Photon emitter and data transmission device wherein a second resonator is arranged in a direction of emission of a radiation-emitting first resonator in such a way that a quantum dot contained in the second resonator can be excited by energy of radiation emitted by the first resonator. A control unit brings the excitation ground state of the quantum dot into resonance with a prescribed resonator mode of the second resonator.

The invention discloses a high-sensitivity bulk acoustic wave silicon microgyroscope in the technical field of micro electro mechanical systems. The high-sensitivity bulk acoustic wave silicon microgyroscope comprises a disc-shaped harmonic oscillator, a supporting cylinder, a circular arc driving electrode, a detection electrode with a displacement mechanism, a detection electrode fixing boss and a base plate. A gyroscope utilizes four-amplitude wave node frequency matching modes of two surfaces of the disc-shaped harmonic oscillator as a driving mode and a detection mode, and all structures are completely realized by a micro electro mechanical machining process on a (111) silicon wafer. According to the high-sensitivity bulk acoustic wave silicon microgyroscope, a displacement enlargement mechanism based on a lever principle is used for outputting and enlarging infinitesimal displacement at the detection mode, so as to improve the sensitivity of the gyroscope, largely simplify the machining process of the bulk acoustic wave silicon microgyroscope, and reduce the production cost.

The invention discloses a medium-deep hole multi-stope and subsection common orepass mining method for mining a hanging ore body. The method comprises the following steps that stage division and subsection division are carried out on the hanging ore body according to the height of an open-pit bench, and transverse and longitudinal spacing pillars and side slope safety pillars are reserved; transport roadways and sectional roadways are utilized to tunnel a connecting roadway to reach the ore body, and a mining structure and a sectional rock drilling roadway are constructed; during stoping of anore room, a plurality of stopes simultaneously carry out medium-deep hole blasting operation, a cutting groove is used as a free surface for lateral ore caving, ore in each stage is conveyed to the centralized stage transport roadways through an orepass, and then conveyed to the ground surface; and after the open-air production is finished, the spacing pillars and top pillars are recovered in time. By adopting the method, the mining and cutting cost and the difficulty of staff organization and management can be reduced, the ore drawing efficiency is improved, and the influence of transportation operation on the slope stability is reduced.

The present invention discloses a junction-modulated tunneling field effect transistor and a fabrication method thereof, belonging to a field of field effect transistor logic device and the circuit in connection with CMOS ultra large scale integrated circuit (ULSI). The PN junction provided by a highly-doped source region surrounding three sides of the vertical channel region of the tunneling field effect transistor can deplete effectively the channel region, so that the energy band of the surface channel under the gate is lifted, therefore the device may obtain a steeper energy band and a narrower tunneling barrier width than the conventional TFET when the band-to-band tunneling occurs, equivalently achieving the effect of a steep doping concentration gradient at the source tunneling junction, and thereby the sub-threshold characteristics are significantly improved while the turn-on current of the device is improved relative to the conventional TFET. Under the conditions that the device of the present invention is compatible with the existing CMOS process, on the one hand an ambipolar effect of the device can be inhibited effectively, while a parasitic tunneling current at a source junction corner in the small size device can be inhibited and thus can equivalently achieve an effect of a steep doping concentration gradient at the source junction.

The invention provides a silicon oxynitride insulation structure and a manufacturing method of the silicon oxynitride insulation structure. The manufacturing method includes the steps that a silicon substrate is provided, and a silicon dioxide layer is formed on the silicon substrate; a first silicon oxynitride layer is formed on the interface between the silicon dioxide layer and the silicon substrate; a second ilicon oxynitride layer is formed on the upper surface of the silicon dioxide layer, and the nitrogen concentration of the second ilicon oxynitride layer is larger than that of the first silicon oxynitride layer; stabilizing processing is carried out on the second ilicon oxynitride layer by an annealing process, and silicon oxynitride insulation structure is composed of the second ilicon oxynitride layer, the silicon dioxide layer and the first silicon oxynitride layer and can prevent the tunnelling effect of carriers while preventing boron diffusion.

The invention discloses a coal face fissure zone gas extraction method. According to the principle of the coal face fissure zone gas extraction method, before working face stoping, a drill hole arrangement method is determined through goaf overlying strata movement and gas seepage research, staggered high and low fissure zone directional long drill holes along the working face trend are arranged in a drilling field in a working face air return gate road, a main hole section of the high-position drill hole extends within the range of 30 m above a goaf formed after stoping of the working face, the low-position drill hole sinks properly at the position of the working face, a low negative pressure balanced extraction mode is adopted for the low-position drill hole, a high negative pressure balanced extraction mode is adopted for the high-position drill hole, and gas in a fissure zone and the goaf after stoping of the working face is extracted. According to the method, gas in the coal facefissure zone can be fully extracted, the gas concentration in the upper corner and the return air flow of the stoping face is reduced, meanwhile, the effect of treating goaf gas is achieved, gas treatment of the working face is achieved, and safe stoping of the coal face is guaranteed.

The invention discloses a doping method of a semiconductor. After a grid is formed on a substrate, the method comprises the following steps of: coating bottom anti-reflective coatings (BARC) on the substrate surfaces at both sides of the grid; injecting ions into the substrates coated with BARCs, and ensuring that the ions can be injected into the substrates to realize doping, but can not penetrate through the substrates at the two sides of the BARC injection grid; removing the BARCs; re-injected ions into the substrate, the BARCs of which are removed, and ensuring that the ions can be injected into grid to realize doping and also can be injected into the substrate at both ends of the grid to realize doping so as to form a drain and a source. The invention can realize doping of the grid, the drain and the source at different concentration and avoid the tunneling effect.

The invention relates to a bi-material railing nanowire tunneling field effect device and a manufacturing method thereof. According to the bi-material railing nanowire tunneling field effect device, a channel is arranged at the center, and a source region and a drain region are respectively arranged at two ends, and an oxide and a gate electrode are covered at the periphery of the channel in sequence. The manufacturing method comprises the steps: SF6 etching a silicon column on a silicon wafer by using a round silicon nitride hard mask; conducting high-temperature oxidation, corroding and reducing the size of the silicon column to be a set diameter value of 6nm-30nm with HF aqueous solution, and conducting high-temperature oxidation to form a silicon column coated by an oxidation layer with set thickness; completing the preparation of a bi-material railing structure by adopting deposition and photoetching technology; and injecting boron and phosphorus of 1*10<20>cm<-2>/10keV and 5*10<18>cm<-2>/10keV at 120-150 DEG C respectively, and annealing at 900 DEG C/10s-1100 DEG C/10s to prepare the source region and the drain region; completing preparation of a metal electrode by CMOS (Complementary Metal-Oxide-Semiconductor) process; and manufacturing the bi-material railing nanowire tunneling field effect device.

A IDCA system combining thermo-electric cooler (TEC) and an internal nBn photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.

The invention discloses a vertical electrode configuration structure for a nanoscale phase change memory cell. The vertical electrode configuration structure comprises an upper electrode material layer, a middle phase change material layer and a lower electrode material layer, wherein the upper electrode material layer and the lower electrode material layer are of asymmetric upper and lower electrode structures and can perform source and drain end exchange, and insulating medium protection layers are arranged on the side of the lower electrode material layer and below the middle phase change material layer. For a low-resistance crystalline state, by constructing an asymmetric upper and lower electrode structure, compared with a structure directly facing a vertical electrode, the equivalentresistance R is increased, the working current is reduced, tunneling of a large current is avoided, and the service life of the device is prolonged, moreover, the non-opposite area component shunts the current of the series path, current diffusion in the series process is increased, the working current is reduced, and the smaller the working current is, the more difficult the metastable crystalline phase structure is broken down.

The invention discloses a bidimensional orientating device for a coal mine underground roadway, which is composed of: a marking mechanism, a rotation mechanism, an indicating mechanism, an isolation mechanism and an assistant mechanism. The marking mechanism is composed of a longitude and latitude sphere shell (1), longitude scales (2) and latitude scales (3); the rotation mechanism is composed of a rotatable shell (4) and a warpwise groove (5); the indicating mechanism is composed of a screw rod pointer (6), a control nut (7), a telescopic rod (11) and a leveling ball (15); the isolation mechanism is composed of a control handle (8), a control panel (9) and an isolation ball (10); the assistant mechanism is composed of a connection board (12), an adjustable connection rod (13), an adjusting nut (14) and the leveling ball (15). The bidimensional orientating device works in a dead zone of a theodolite or a total station instrument and overcomes the defects of the theodolite or total station to some degree, avoids tunneling into an abandoned roadway and avoids safety and economic loss caused by constructing a waste hole and mis-penetrating a wasted and abandoned roadway.

The present invention provides a Hetero-Bipolar Transistor that suppresses a recombination current between electrons in the conduction band of an emitter and holes in the valence band of a base, which results on an enhancement of the current gain of the transistor. The HBT according to the present invention comprises a semi-insulating semiconductor substrate and a series of semiconductor layers on the substrate. The semiconductor layers are a buffer layer, a sub-collector layer a collector layer, a base layer, an emitter layer, an emitter contact layer, and an intermediate layer between the emitter layer and the emitter contact layer. The emitter layer has a carrier concentation of 1.0×10¹⁹ cm⁻³.