3results about How to "Avoid tunneling" patented technology

This invention relates to an adsorption tower and a gas nano-purifier. The adsorption tower includes an outer tube and an inner tube coaxially arranged within the outer tube. The outer tube has a first outlet on its wall. The inner tube includes an inlet section, an adsorption section, and a dust removal section connected sequentially from bottom to top. The inlet section has an inlet on its wall. The adsorption section is filled with adsorbent, and a first filter and a second filter are respectively provided at the connection points between the adsorption section and the inlet and dust removal sections. At least a portion of the sidewalls of the dust removal section is configured as a filter layer. Under purification conditions, the high-pressure gas to be treated enters the inner tube through the inlet, passes sequentially upwards through the adsorption and dust removal sections, enters the annular gap between the inner and outer tubes via the filter layer, and is discharged from the first outlet. Through this configuration, using a tube-in-tube structure with the outer and inner tubes coaxially arranged, the integration of the equipment is improved and its volume is reduced, achieving multi-stage purification of gas within a single component, including diffusion, deep adsorption, and precision dust removal.

The present application relates to compressed air purification technology, and aims to provide a compressed air purification method capable of recycling compressed waste heat and adjusting regenerated gas. The method comprises the following steps: the hot compressed air at the outlet of the oil-free air compressor exchanges heat with the regenerated gas in a waste heat recycling heat exchanger, and is sent to a purifier after being cooled by a cooler and a pre-cooling machine; the purifier keeps the double-tower inlet gas adsorption and regeneration desorption alternately running; the regenerated gas to be heated is introduced into the waste heat recycling heat exchanger for preheating, and is further heated by a proportional regulating valve into an electric heater, and the high-temperature regenerated gas is used for regeneration desorption; in the process, the flow of the regenerated gas is adjusted by the proportional regulating valve, and the CO2 concentration monitor is used to ensure that the predetermined control target is met. The present application fundamentally solves the key problems in the traditional technology, such as poor regeneration gas regulation, high consumption of regenerated gas, and insufficient utilization of the compressed heat of the oil-free air compressor, and fundamentally greatly expands the practicability and universality of the purification process in different industries.

This invention provides an n-type digital alloy material for the multiplication region of an avalanche photodiode and its preparation method. The digital alloy material comprises: a superlattice structure matching the crystal lattice of an InP substrate; the superlattice structure is formed by repeated stacking of single periodic units; each periodic unit comprises a layer, a first GaAsSb layer, an n-type Si-doped GaAsSb layer, and a second GaAsSb layer stacked sequentially; wherein the value of x ranges from 0.75 to 0.85; the thickness ratio between the layer, the first GaAsSb layer, the n-type Si-doped GaAsSb layer, and the second GaAsSb layer in a single periodic unit is 22:1:10:1. The digital alloy material and its preparation method provided by this invention can solve the problems of low n-type carrier concentration and narrow application range of n-type alloy materials in the multiplication region of avalanche photodiodes.