Doping method of semiconductor

A semiconductor, impenetrable technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as reducing device quality

Active Publication Date: 2010-09-22
SEMICON MFG INT (SHANGHAI) CORP
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] It can be seen that although the method in the prior art can achieve different concentrations of doping of the gate, drain, an

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Doping method of semiconductor
  • Doping method of semiconductor
  • Doping method of semiconductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0028] In order to make the doping concentration of the gate greater than the doping concentration of the drain and the source, the present invention still performs two ion implantations, but blocks the ion implantation to the substrates on both sides of the gate during the first ion implantation process, so that the ions It can only be implanted into the gate, and then ensure that the ions can be implanted into the gate and the substrate on both sides of the gate to form the source and drain during the second ion implantation. In this way, since the gate is doped by ion implantation twice, and the source and drain are doped by ion implantation only once respectively, it can be ensured that the doping concentration of the gate is greater than that of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a doping method of a semiconductor. After a grid is formed on a substrate, the method comprises the following steps of: coating bottom anti-reflective coatings (BARC) on the substrate surfaces at both sides of the grid; injecting ions into the substrates coated with BARCs, and ensuring that the ions can be injected into the substrates to realize doping, but can not penetrate through the substrates at the two sides of the BARC injection grid; removing the BARCs; re-injected ions into the substrate, the BARCs of which are removed, and ensuring that the ions can be injected into grid to realize doping and also can be injected into the substrate at both ends of the grid to realize doping so as to form a drain and a source. The invention can realize doping of the grid, the drain and the source at different concentration and avoid the tunneling effect.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor doping method. Background technique [0002] With the wide application of electronic equipment, the manufacturing process of semiconductors has been developed rapidly. In the manufacturing process of semiconductors, doping processes are involved. Specifically, polysilicon is doped by ion implantation to form gates, and The substrate on both sides of the gate is doped to form the drain and source. [0003] However, according to actual needs, the doping concentration of the gate is generally required to be greater than the doping concentration of the drain and the source. Therefore, the doping method for achieving different doping concentrations in the prior art includes the following steps: [0004] Step one, see figure 1 A gate oxide layer 102 and a polysilicon layer 103 are formed on a substrate 101 , and the polysilicon layer 103 is doped by ion impl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/265H01L21/31H01L21/28H01L21/335
Inventor 吴永玉何学缅
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap