Doping method of semiconductor

Abstract

The invention discloses a doping method of a semiconductor. After a grid is formed on a substrate, the method comprises the following steps of: coating bottom anti-reflective coatings (BARC) on the substrate surfaces at both sides of the grid; injecting ions into the substrates coated with BARCs, and ensuring that the ions can be injected into the substrates to realize doping, but can not penetrate through the substrates at the two sides of the BARC injection grid; removing the BARCs; re-injected ions into the substrate, the BARCs of which are removed, and ensuring that the ions can be injected into grid to realize doping and also can be injected into the substrate at both ends of the grid to realize doping so as to form a drain and a source. The invention can realize doping of the grid, the drain and the source at different concentration and avoid the tunneling effect.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor doping method. Background technique [0002] With the wide application of electronic equipment, the manufacturing process of semiconductors has been developed rapidly. In the manufacturing process of semiconductors, doping processes are involved. Specifically, polysilicon is doped by ion implantation to form gates, and The substrate on both sides of the gate is doped to form the drain and source. [0003] However, according to actual needs, the doping concentration of the gate is generally required to be greater than the doping concentration of the drain and the source. Therefore, the doping method for achieving different doping concentrations in the prior art includes the following steps: [0004] Step one, see figure 1 A gate oxide layer 102 and a polysilicon layer 103 are formed on a substrate 101 , and the polysilicon layer 103 is doped by ion impl...

AI Technical Summary

Problems solved by technology

[0008] It can be seen that although the method in the prior art can achieve different concentrations of doping of the gate, drain, and source, it will produce a tunneling effect in which the drain and source are turned on, thereby reducing the quality of the device.

Images