9results about "Variable-capacitor element amplifiers" patented technology

A signal transmitting system, a signal processing system and methods thereof are disclosed. A frequency dependent dynamic range control method is used in a signal transmitting system having a lower impedance in a high frequency region, whereby a current spectrum and a regulation parameter are dynamically estimated to reduce the current in the high frequency region. This method advantageously avoids current overload without using a series resistor as a current limiter.

Method for stabilizing a non-linear parametric amplifier array comprising N non-linear resonator modes, linear and non-linear couplings between sites, external coherent control fields on each site and input / output ports to send and retrieve an amplified signal; the method comprising: setting the phases of the external coherent control fields to grow linearly with site index, dividing the N sites of the array in 3 regions, setting, in the central region, an homogeneous steady-state solution, assuming periodic boundary conditions, and setting the central quantities to produce directional topological amplification in an homogeneous system; in the left and right buffer regions, imposing to some quantities a smoothly increasing or decreasing profile function from the boundaries to the center; choosing external coherent control frequencies or bare resonator frequencies to locally compensate for the photon number-dependent frequency shifts induced by non-linearities; and solving the exact steady-state mean-field displacements assuming open boundary conditions.

Method for stabilizing a non-linear parametric amplifier array comprising N non-linear resonator modes, at sites j = 1, ..., N, linear and non-linear couplings between sites, external coherent control fields on each site and input / output ports to send and retrieve an amplified signal; the method comprising: setting the phases of the external coherent control fields to grow linearly with site index, dividing the N sites of the array in 3 regions, setting, in the central region, an homogeneous steady-state solution, assuming periodic boundary conditions, and setting the central quantities to produce directional topological amplification in an homogenous system; in the left and right buffer regions, imposing to some quantities a smoothly increasing or decreasing profile function from the boundaries to the center; choosing external coherent control frequencies or bare resonator frequencies to locally compensate for the photon number-dependent frequency shifts induced by non-linearities; and solving the exact steady-state mean-field displacements assuming open boundary conditions.

A matching technique for receivers with ESA so that the receiver can achieve low noise performance over a broad bandwidth. An electrically small dipole is matched directly to a parametric amplifier, without using any inductors. The parametric amplifier operates in a time-varying fashion, driven by a higher RF frequency pump, and exhibits a high impedance, time-varying capacitive load to the ESA. Therefore, the low frequency voltage output from the ESA is detected at the input of the parametric amplifier, being amplified and upconverted to the proximity of the pump frequency at the output with minimum contamination of noise in this process.

A matching technique for receivers with ESA so that the receiver can achieve low noise performance over a broad bandwidth. An electrically small dipole is matched directly to a parametric amplifier, without using any inductors. The parametric amplifier operates in a time-varying fashion, driven by a higher RF frequency pump, and exhibits a high impedance, time-varying capacitive load to the ESA. Therefore, the low frequency voltage output from the ESA is detected at the input of the parametric amplifier, being amplified and upconverted to the proximity of the pump frequency at the output with minimum contamination of noise in this process.

The utility model discloses a kind of Josephson parametric amplifier based on full impedance matching, it is related to superconducting quantum computing technical field.Josephson parametric amplifier includes substrate and the impedance transformer, resonator, superconducting quantum interference device and pump line sequentially arranged on substrate;Resonator and superconducting quantum interference device constitute resonant circuit, and resonator and superconducting quantum interference device are respectively used to provide the impedance and nonlinear inductance required for resonance;Impedance transformer, resonator and pump line are coplanar waveguide, and resonator and impedance transformer jointly constitute impedance network, provide the impedance required for signal amplification to realize high bandwidth high gain parametric amplifier.The utility model uses coplanar waveguide to realize the impedance network of full impedance matching, simplifies the manufacturing process of parametric amplifier, improves the consistency of preparation amplifier.Simultaneously, the coplanar waveguide based on superconducting material reduces the loss in signal amplification process, improves the reading efficiency of quantum signal.

The embodiment of the invention provides an integrated packaged Josephson parametric amplifier and a signal amplification method, and belongs to the technical field of signal amplification. The method comprises the steps that a radio frequency packaging circuit board is arranged in a superconducting shielding shell, the radio frequency packaging circuit board is in bonding connection with a Josephson parametric amplifier chip through a superconducting wire, and the radio frequency packaging circuit board is connected with at least two multi-channel radio frequency connectors; the radio frequency packaging circuit board is of a stepped slotted structure, and the external bias circuit is composed of a radio frequency blocking capacitor and a spiral line inductor and used for blocking crosstalk of a pumping signal and a signal to be amplified. And the superconducting shielding shell adopts a single-layer or multi-layer nested structure. According to the invention, a stepped slotted structure of a radio frequency packaging circuit board and an inverted fixed cooperative compression space of a Josephson parametric amplifier chip are adopted, an external bias circuit is arranged, and a leadless series circuit is formed by a patch-packaged radio frequency blocking capacitor and a welded spiral inductor; and crosstalk between the pumping signal and the radio frequency signal to be amplified is effectively blocked.

A superconducting quantum mechanical device includes a first Josephson junction, a second Josephson junction, a third Josephson junction, and a fourth Josephson junction connected in a bridge circuit having a first resonant eigenmode, a second resonant eigenmode, and a third resonant eigenmode. The device further includes a first capacitor pad and a second capacitor pad. The first capacitor pad, the second capacitor pad, and the bridge circuit form a superconducting qubit having a resonant frequency corresponding to the first resonant eigenmode. The device further includes a first resonator section and a second resonator section. The first resonator section, the second resonator section, and the bridge circuit form a resonator having a resonant frequency corresponding to the second resonant eigenmode. The device further includes a magnetic flux source disposed near the bridge circuit. The magnetic flux source is configured to provide a magnetic flux through the bridge circuit during operation to cause coupling between the first resonant eigenmode, the second resonant eigenmode, and the third resonant eigenmode when the third resonant eigenmode is excited.

A chip manufacturing method, system, and chip, which relates to the technical field of micro-nano processing, includes the steps of: (201) manufacturing a first bottom circuit of an impedance Josephson parametric amplifier and a second bottom circuit used for testing by a laser direct writing exposure method to obtain a first chip product; (202) generating a photoresist structure used for manufacturing a Josephson junction on the first chip product by a laser direct writing exposure method; (203) cutting a second chip product having a second bottom circuit and a third chip product having a first bottom circuit from the first chip product; (204) fabricating a Josephson junction sample based on the photoresist structure corresponding to the second bottom circuit and obtaining an oxidation condition; (205) manufacturing a Josephson junction based on the photoresist structure corresponding to the first bottom circuit according to the oxidation condition to obtain a fourth chip product; and (206) obtaining a target chip product based on the fourth chip product.