Silicon oxynitride insulation structure and manufacturing method thereof

Abstract

The invention provides a silicon oxynitride insulation structure and a manufacturing method of the silicon oxynitride insulation structure. The manufacturing method includes the steps that a silicon substrate is provided, and a silicon dioxide layer is formed on the silicon substrate; a first silicon oxynitride layer is formed on the interface between the silicon dioxide layer and the silicon substrate; a second ilicon oxynitride layer is formed on the upper surface of the silicon dioxide layer, and the nitrogen concentration of the second ilicon oxynitride layer is larger than that of the first silicon oxynitride layer; stabilizing processing is carried out on the second ilicon oxynitride layer by an annealing process, and silicon oxynitride insulation structure is composed of the second ilicon oxynitride layer, the silicon dioxide layer and the first silicon oxynitride layer and can prevent the tunnelling effect of carriers while preventing boron diffusion.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a silicon oxynitride insulating structure and a manufacturing method thereof. Background technique [0002] At present, silicon dioxide is the main material of the gate insulating layer. As the integration level of integrated circuits continues to increase and the critical dimensions continue to decrease, the thickness of the silicon dioxide layer becomes smaller and smaller. Since the silicon dioxide layer of the gate insulating layer becomes thinner, the boron dopant of the gate electrode easily penetrates the thin silicon dioxide layer, and the tunneling effect of carriers is prone to occur. It is no longer feasible to use the traditional pure silicon dioxide layer as the gate insulating layer. In order to overcome the above problems, the prior art generally adopts nitrogen doping in the silicon dioxide layer to reduce the diffusion of dopants and increase its dielectr...

AI Technical Summary

Problems solved by technology

A silicon dioxide layer 22 is formed on the silicon substrate 20, and nitrogen ions are generated by using radio frequency voltage or current, and a silicon oxynitride layer 23 is formed on the surface of the silicon dioxide layer 22, which can effectively increase the nitrogen content on the surface of the silicon dioxide layer 22 , but cannot improve the tunneling effect of carriers between the silicon dioxide layer 22 and the silicon substrate 20

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