Vertical electrode configuration structure for nanoscale phase change memory cell

Abstract

The invention discloses a vertical electrode configuration structure for a nanoscale phase change memory cell. The vertical electrode configuration structure comprises an upper electrode material layer, a middle phase change material layer and a lower electrode material layer, wherein the upper electrode material layer and the lower electrode material layer are of asymmetric upper and lower electrode structures and can perform source and drain end exchange, and insulating medium protection layers are arranged on the side of the lower electrode material layer and below the middle phase change material layer. For a low-resistance crystalline state, by constructing an asymmetric upper and lower electrode structure, compared with a structure directly facing a vertical electrode, the equivalentresistance R is increased, the working current is reduced, tunneling of a large current is avoided, and the service life of the device is prolonged, moreover, the non-opposite area component shunts the current of the series path, current diffusion in the series process is increased, the working current is reduced, and the smaller the working current is, the more difficult the metastable crystalline phase structure is broken down.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to a vertical electrode configuration structure for a nanoscale phase-change memory unit, in particular to the design and application of a phase-change memory element based on a chalcogenide phase-change material. Background technique [0002] The phase change memory based on the chalcogenide phase change material can store information and data through the huge resistance difference between the crystalline phase and the amorphous phase, and can even achieve multi-level phase change storage. This phase-change process has the advantages of low power consumption and high-density cost as the size decreases, so the industry pays great attention to the development of nanoscale phase-change memory. [0003] At present, there are relatively mature applications in the structural design of phase change units, such as T-shaped structure and side wall contact structure, etc. The purpose is to redu...

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Problems solved by technology

[0005] Therefore, it is necessary to propose a new electrode configuration structure suitable for nanoscale phase change units to solve the problem of tunneling and shorting in the process of nanoscale low-resistance crystallization

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