3results about How to "Improve effective quality" patented technology

The present disclosure provides an electrostatic MEMS resonator with low dynamic resistance, comprising: a first resonance unit, which is a ring structure; a first support unit, one end of which is connected to the first resonance unit, and the other end is connected to the first base; wherein the length of the first support unit is equal to one quarter of the resonance wavelength of the electrostatic MEMS resonator; a pair of electrodes, comprising: a first electrode and a second electrode, the first electrode is located on the inner side of the first resonance unit, and the second electrode is located on the outer side of the first resonance unit; wherein the first electrode and the second electrode are respectively spaced apart from the first resonance unit by a first gap layer. The present disclosure also provides an electrostatic MEMS resonator array with low dynamic resistance.

The application relates to a full-coupling MEMS tuning fork gyroscope, comprising: an anchor point structure, a suspension structure being suspended on the anchor point structure; wherein the suspension structure comprises two symmetrically arranged suspension units, each suspension unit comprising a driving mass, a Coriolis mass and a sensitive mass, the two sensitive masses being connected through a sensitive coupling structure between opposite surfaces of the two sensitive masses, and the free ends of the two driving masses being connected through a driving coupling structure. The MEMS tuning fork gyroscope designed by the application adopts a full-coupling structure, so that the response amplitudes of the driving mode and the sensitive mode of the gyroscope are closer, the frequency difference between the two modes is effectively reduced, and the sensitivity of the gyroscope is effectively enhanced.

The invention discloses a radio frequency element and an application and manufacturing method thereof. The radio frequency element comprises a substrate; the channel layer is arranged on the substrate; the potential barrier layer is arranged on the channel layer; the first gallium nitride layer is arranged on the barrier layer and covers the barrier layer; the second gallium nitride layer is arranged on the first gallium nitride layer; the third gallium nitride layer is arranged on the second gallium nitride layer; the first drain electrode is arranged on the third gallium nitride layer; the first source electrode is arranged on the third gallium nitride layer, and a concave part is formed between the first source electrode and the first drain electrode; the first grid electrode is arranged on the barrier layer, the first grid electrode covers the concave part, and the first source electrode and the first drain electrode are close to the top of the concave part; wherein the second gallium nitride layer and the third gallium nitride layer are located between the source electrode and the barrier layer and between the drain electrode and the barrier layer. According to the radio frequency element provided by the invention, the quality of the integrated radio frequency element can be improved.