A two-dimensional heterojunction tunneling field effect transistor immunosensor and its preparation method

A tunneling field effect and immunosensor technology, which is applied in the field of two-dimensional heterojunction tunneling field effect transistor immunosensors and their preparation, can solve the problems of sensitivity limitation, short-channel effect of devices, etc. Effects of modulated, steep subthreshold slopes

Active Publication Date: 2021-09-03
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the above defects in the prior art, the object of the present invention is to provide a two-dimensional heterojunction tunneling field effect transistor immunosensor and its preparation method, which adopts the bottom gate structure of the buried gate metal electrode to solve the current There are sensitivity limitations in FET immune sensors and the problem of short channel effects in the process of device miniaturization

Method used

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  • A two-dimensional heterojunction tunneling field effect transistor immunosensor and its preparation method
  • A two-dimensional heterojunction tunneling field effect transistor immunosensor and its preparation method
  • A two-dimensional heterojunction tunneling field effect transistor immunosensor and its preparation method

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Embodiment 1

[0048] Step 1, providing an insulating substrate and cleaning it, the specific steps are as follows:

[0049] 1) SiO 2 Put the Si substrate in an acetone solution for ultrasonic cleaning, and the cleaning time is 5 minutes. Put the substrate cleaned by acetone into an ethanol solution for ultrasonic cleaning for 5 minutes, and finally rinse it with deionized water for 1 minute to remove the Si substrate. organic material;

[0050] 2) Clean the Si substrate in a mixed solution of hydrochloric acid, hydrogen peroxide, and deionized water at a ratio of 1:1:6 to remove impurities such as active metals, metal oxides, and hydroxides on the Si substrate;

[0051] 3) Clean the Si substrate in a mixed solution of hydrofluoric acid and deionized water at a ratio of 1:50 for 30 seconds, then put it in deionized water and let it stand for 1 minute. Repeat this step 5 times to remove the surface of the Si substrate. natural oxides and dangling bonds;

[0052] 4) Dry the cleaned Si subst...

Embodiment 2

[0075] Step 1, providing an insulating substrate and cleaning it, the specific steps are as follows:

[0076] 1) SiO 2 Put the Si substrate in an acetone solution for ultrasonic cleaning, and the cleaning time is 5 minutes. Put the substrate cleaned by acetone into an ethanol solution for ultrasonic cleaning for 5 minutes, and finally rinse it with deionized water for 1 minute to remove the Si substrate. organic material;

[0077] 2) Clean the Si substrate in a mixed solution of hydrochloric acid, hydrogen peroxide, and deionized water at a ratio of 1:1:6 to remove impurities such as active metals, metal oxides, and hydroxides on the Si substrate;

[0078] 3) Clean the Si substrate in a mixed solution of hydrofluoric acid and deionized water at a ratio of 1:50 for 30 seconds, then put it in deionized water and let it stand for 1 minute. Repeat this step 5 times to remove the surface of the Si substrate. natural oxides and dangling bonds;

[0079] 4) Dry the cleaned Si subst...

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Abstract

The invention discloses a two-dimensional heterojunction tunneling field effect transistor immunosensor and a preparation method thereof. A two-dimensional material with a specific band gap is selected to be stacked into a vertical heterojunction as a channel layer. The energy band structures in the on-state and off-state are staggered arrangement and staggered arrangement respectively, achieving low current in the off-state and high current due to inter-band tunneling in the on-state. Using buried gate structure, surface modification with specific antibody protein molecules on the heterojunction surface modulated by gate voltage. As an effective detection area, the heterojunction has the ability to obtain ideal gate control. The detection is realized by using multiple electrical parameters to control the dielectric of the detection area along with the detection sample. The sensor of the present invention has a steeper sub-threshold slope, which can realize ultra-high sensitivity detection of biomolecules and save precious clinical specimens. At the same time, due to the ultra-thin thickness of the two-dimensional material, the device has a great advantage in size reduction, which is convenient for energy saving. With regulation.

Description

technical field [0001] The invention relates to the technical field of biosensing, in particular to a two-dimensional heterojunction tunneling field effect transistor immunosensor and a preparation method thereof. Background technique [0002] Field-effect transistor-based biosensors have received a lot of attention in recent years because of the advantage of label-free electrical measurements. The device is small in size and light in weight, and the chip integration of the sensor and the measurement system is high, which is convenient for mass production at low cost. The gating effect of biomolecules on semiconductors can be directly detected through changes in properties such as current and conductance. As a kind of biosensor, immunosensor is very suitable to obtain significantly better performance than traditional detection methods through the field effect tube structure. In order to achieve the detection of specific molecules, the gate oxide layer on the semiconductor ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06H01L29/10H01L29/423H01L21/34H01L21/44G01N33/543G01N33/68
CPCG01N33/5438G01N33/6854H01L21/44H01L29/0684H01L29/1029H01L29/42316H01L29/66969H01L29/7391
Inventor 潘毅柯柯闵泰雷虹吕毅
Owner XI AN JIAOTONG UNIV
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