Vertical thin film transistor (TFT) and manufacturing method thereof as well as display device and manufacturing method thereof

A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of not too high voltage, high off-current, and poor switching effect, so as to prevent the off-current from being too high , Improve the effect of stress resistance and conduction degree

Active Publication Date: 2012-05-23
吴江汾湖科技创业服务有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the vertical thin film transistor 100 uses the depletion region formed at the contact interface between the gate layer 108 and the semiconductor layer 110 as an insulating layer. Since the formed depletion region is not too large, the applied V GS The voltage cannot be too high, and other problems include high off current (Off current), and the on-off current ratio (On-Off Current Ratio) is only about 10 3 , resulting in poor switching

Method used

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  • Vertical thin film transistor (TFT) and manufacturing method thereof as well as display device and manufacturing method thereof
  • Vertical thin film transistor (TFT) and manufacturing method thereof as well as display device and manufacturing method thereof
  • Vertical thin film transistor (TFT) and manufacturing method thereof as well as display device and manufacturing method thereof

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Embodiment Construction

[0019] Specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0020] see image 3 , is a schematic structural diagram illustrating a vertical thin film transistor 300 according to an embodiment of the present invention. The upper part of the figure is a top view, and the lower part is a side view.

[0021] The vertical thin film transistor 300 is applied to a substrate 302, including a first electrode layer 304, a first insulating layer 306, a gate layer 308, a second insulating layer 314, a semiconductor layer 310, a third insulating layer 316 and a second electrode layer 312 . The feature of the present invention is that the gate layer 308 is implemented as a concentric ring structure, thereby improving the stress resistance of the vertical thin film transistor 300, protecting the semiconductor layer 310 when the substrate 302 is bent, and increasing the channel width (will be detailed later. describe...

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Abstract

The invention relates to a vertical thin film transistor (TFT) and a manufacturing method thereof as well as a display device and a manufacturing method thereof. The display device comprises the vertical TFT. The vertical TFT is applied to a substrate. A gate layer of the vertical TFT is of concentric ring structure and the adjacent concentric rings are connected with each other. The stress resistance and the conduction current of the vertical TFT can be elevated through the concentric ring structure.

Description

technical field [0001] The present invention relates to a vertical thin film transistor (Vertical Thin Film Transistor), in particular to a vertical thin film transistor capable of improving stress resistance and conduction current, a manufacturing method thereof, and a display device including the vertical thin film transistor. its method of manufacture. Background technique [0002] Organic Light Emitting Diode (OLED) display devices have potential for development in the future, because this type of display device has the ability of self-illumination, so it does not need a backlight module as a light source for displaying images like a liquid crystal display device. However, if the semiconductor material with low carrier mobility (Mobility) such as hydrogenated amorphous silicon (Hydrogenated AmorphousSilicon; a-Si: H) is used to manufacture the thin film transistor (Thin Film Transistor, TFT) of the organic light emitting diode display device, the supply current will occu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/423H01L21/336H01L21/28H01L51/05H01L51/10H01L51/40G09G3/32
CPCH01L29/78642
Inventor 翁守正李怀安莫启能
Owner 吴江汾湖科技创业服务有限公司
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