Thin film transistor array substrate, manufacturing method thereof and display panel

Abstract

The invention provides a thin film transistor array substrate, a manufacturing method thereof and a display panel. The thin film transistor array substrate comprises thin film transistors, wherein each thin film transistor is internally provided with an active layer composed of a carbon nanotube semiconductor layer and a non-doped amorphous silicon layer, and the non-doped amorphous silicon layer is arranged between the corresponding carbon nanotube semiconductor layer and a source as well as a drain. Therefore, when the thin film transistor is turned on, electricity is mainly conducted by means of the carbon nanotube semiconductor layer in the active layer, and the carbon nanotube semiconductor layer has high electron mobility and forms a high ON-state current; and when the thin film transistor is turned off, a leakage current is mainly released by means of the non-doped amorphous silicon layer in the active layer, and the leakage current is small, thus the thin film transistor has a high switching current ratio.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor array substrate, a manufacturing method thereof and a display panel. Background technique [0002] The demand for various display devices has increased with the rise of the global information society. Therefore, much effort has been devoted to the research and development of various flat display devices, such as liquid crystal displays (LCDs), plasma display panels (PDPs), electroluminescent displays (ELDs), and vacuum fluorescent displays (VFDs). [0003] Thin Film Transistor (TFT) is a key electronic component in modern microelectronics technology, and has been widely used in fields such as flat panel displays. In practical applications, the requirement for thin film transistors is to obtain a larger switching current ratio. Factors Affecting the On-Off Current Ratio The carrier mobility of the semiconductor material in the active layer of the thin-fil...

AI Technical Summary

Problems solved by technology

[0005] In view of this, it is necessary to provide a thin film transistor array substrate, its manufacturing method and display panel to solve the problem that in the existing thin film transistors, the mobility of carriers in the active layer is low, resulting in a slow response speed of the thin film transistors. Slow, or the preparation cost is higher, the method is more complicated, the off-state current is larger, etc.

Images