Efficient two-dimensional superlattice heterojunction photovoltaic device and preparation thereof

A photovoltaic device and superlattice technology, applied in the field of efficient two-dimensional superlattice heterojunction photovoltaic devices and their preparation, can solve problems such as being unsuitable for multi-layer periodic superlattice, and achieve excellent mobility and stability properties, weakening interlayer coupling, and high light absorption efficiency

Active Publication Date: 2018-11-27
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But not suitable for multilayer periodic superlattice construction

Method used

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  • Efficient two-dimensional superlattice heterojunction photovoltaic device and preparation thereof
  • Efficient two-dimensional superlattice heterojunction photovoltaic device and preparation thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0029] A high-efficiency two-dimensional superlattice heterojunction photovoltaic device with a structure such as figure 1 As shown, it at least includes a substrate 1, a silicon dioxide layer 2 grown on the substrate 1, and a multi-layer two-dimensional material covered on the silicon dioxide layer, and each layer in the multi-layer two-dimensional material part area Organic molecular layers are embedded between them to form a two-dimensional superlattice structure 4. The two-dimensional superlattice structure 4 is composed of a two-dimensional material layer 41 and an embedded organic molecular layer 42. Its structure is as follows figure 2 As shown, the two-dimensional superlattice structure 4 and the multi-layer two-dimensional material 3 not embedded in the organic molecular layer 42 form a two-dimensional superlattice heterostructure, and two ends of the two-dimensional superlattice heterostructure are respectively grown with metal electrode.

[0030] The preparation m...

Embodiment 2

[0038] A highly efficient two-dimensional superlattice heterojunction photovoltaic device, the structure of which is the same as in Example 1, except that the preparation method is changed to:

[0039] First, polysilicon is used as the substrate material, and a silicon dioxide film is grown on the substrate layer with a thickness of 100 nm.

[0040] Then, a layer of black phosphorus is adopted by mechanical peeling method, and the black phosphorus is multi-layered with a thickness of more than 2.5nm. It is then transferred onto the silicon dioxide layer by transfer technology.

[0041] Afterwards, a layer of photoresist is covered on the part of the black phosphorus.

[0042] Then, the device structure composed of polysilicon, silicon dioxide and black phosphorus was immersed in an electrolyte solution of tetrabutylammonium bromide.

[0043] Subsequently, a working electrode, a counter electrode and a reference electrode were fabricated. The working electrode material is pl...

Embodiment 3-7

[0047] The difference from Example 1 is that in this example, the multilayer two-dimensional materials are replaced by molybdenum disulfide, tungsten diselenide, indium selenide, tin selenide or germanium sulfide.

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Abstract

The invention relates to an efficient two-dimensional superlattice heterojunction photovoltaic device and preparation thereof. The preparation method of the efficient two-dimensional superlattice heterojunction photovoltaic device includes the steps: a) immersing a device structure composed of a substrate (1), a silicon dioxide layer (2) and multiple layers of two-dimensional materials into an electrolyte solution containing organic molecules; b) preparing a three-electrode system on the multiple layers of two-dimensional materials and applying a negative voltage to insert organic molecules with positive charges into part of the region of the multiple layers of two-dimensional materials to form a two-dimensional superlattice structure (4), and then obtaining a two-dimensional superlatticeheterostructure; and c) finally, growing metal electrodes at both ends of the two-dimensional superlattice heterostructure, thus completing the preparation process. Compared with the prior art, the present invention discloses stable superlattice materials in which two-dimensional materials and organic molecular layers alternate with each other. The superlattice materials and the two-dimensional multilayer material constitute a heterojunction photovoltaic device, and the result is equivalent to parallel connection of a plurality of two-dimensional material heterojunctions, and the light absorption efficiency is high, and the mobility and the stability are high.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and relates to a high-efficiency two-dimensional superlattice heterojunction photovoltaic device and its preparation. Background technique [0002] Two-dimensional nanomaterials have become a new generation of high-performance nanomaterials and one of the core materials of international frontier research. Single-layer MoS 2 For example, its electron mobility can reach 200cm at room temperature 2 / Vs. At the same time, when obtaining the same effect of electron movement, MoS 2 Thinner and lighter than Si. It consumes 100,000 times less power than Si transistors in steady state. At the same time MoS 2 With a direct bandgap, using MoS 2 The fabricated light-emitting device has excellent photoelectric properties. Also based on MoS 2 With its flexible characteristics, the device can be bent and stretched, thus giving birth to many new application fields. If different types of o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K30/10H10K2102/00Y02E10/549
Inventor 汤乃云
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER
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