Tunneling field effect device for channel potential barrier height control

Abstract

The invention belongs to the field of semiconductor integrated circuits, and specifically relates to a tunneling field effect device for channel potential barrier height control. The center of the device is provided with a channel, two ends of the channel are provided with a source terminal and a drain terminal of different conductive types, a tunneling junction is formed between the source terminal and the channel, the channel is formed by the adoption of three or more than three potential barrier areas, the energy band of the potential barrier area at the middle section is higher than the energy bands of the channel close to the drain terminal and the source terminal, the device also comprises a gate oxide layer fully covering the channel, and the gate oxide layer is fully covered by a gate electrode. The portion of the channel of the device employs materials of different doping concentrations or types, and three sections or more sections of the potential barrier structures are formed in the channel. According to the simulation research result of the tunneling device structure for channel potential barrier height control, the off-state leakage current of the device can be effectively reduced, the sub-threshold slope is reduced, the short-channel effect and the DIBL effect are suppressed, the transconductance characteristic is good, and comprehensive optimization of the performance of the device is realized.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuits, and in particular relates to a tunneling field effect device with channel potential barrier height control. Background technique [0002] Tunneling field effect transistors are based on the tunneling transport between energy bands of carriers, and adopt a different working mechanism from the structure of traditional metal oxide semiconductor field effect devices. They have excellent sub-threshold characteristics and can be lower than traditional The physical limit of MOS FETs is 60 mV / dec, with very low leakage current. However, since the tunneling field effect transistor is based on the quantum tunneling of carriers between energy bands to realize carrier transport, its on-state current is relatively small and its driving ability is weak. On the other hand, except for the carrier at the source end Energy band transport can be realized, and the carriers at the drain can also be t...

AI Technical Summary

Problems solved by technology

The traditional metal-oxide-semiconductor field-effect device belongs to the channel barrier height-controlled structure, which has a large on-state current, but its carriers are based on thermal excitation, and its subthreshold slope cannot be lower than 60 mV / dec at room temperature. physical limit

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