Full-surrounded gate synapse transistor, preparation method and circuit connection method

Abstract

The invention relates to a full-surrounded gate synapse transistor, a preparation method and a circuit connection method. The full-surrounded gate synapse transistor comprises an active layer, an insulating layer, a gate electrode, a source electrode and a drain electrode. The active layer is a cylinder; the insulating layer and the gate electrode are sequentially wrapped on the outer side of theactive layer; one end of the active layer is provided with a source electrode, and the other end of the active layer is provided with a drain electrode; both the source electrode and the drain electrode are cylinders; the bottom surface diameters of the source electrode and the drain electrode are smaller than the bottom surface diameter of the active layer; and the active layer, the source electrode and the drain electrode are coaxially arranged. According to the invention, the gate voltage can control the channel current from all directions, and the control capability of the gate electrode is improved, so that the power consumption of the device is reduced.

Description

technical field [0001] The invention relates to the technical field of synapse transistors, in particular to a synapse transistor with a fully enclosed gate, a preparation method and a circuit connection method. Background technique [0002] With the rapid development of information technology and the explosive growth of data volume, the processing capacity for huge data volume has also begun to encounter bottlenecks. Traditional computers based on the von Neumann system show strong computing power when dealing with problems with clear logic and clear data structure, but for some problems with fuzzy logic structure and huge data volume, such as image and video processing, It will be very inefficient and consume a lot of energy. Inspired by the human brain, research on brain-inspired computer systems has received widespread attention. To manufacture brain-like computers, it is particularly important to develop high-performance synaptic transistors. The current traditional ...

AI Technical Summary

Problems solved by technology

The current traditional synaptic transistors are all based on the stacked structure of thin film transistor technology (Thin Film Transistor TFT), and the control ability of the gate to the channel current is weak. A series of problems such as high consumption make the performance of the synaptic transistor device low. At the same time, the proton mobility of the insulating layer in the traditional synaptic transistor is insufficient, and the synaptic characteristics need to be improved.

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