105results about How to "Reduce charge density" patented technology

The present invention provides a medical device, preferably an ophthalmic device, more preferably a contact lens, which comprises a core material and a biocompatible LbL coating non-covalently attached to said core material. The biocompatible LbL coating comprises at least one charge / non-charge bilayer, wherein said charge / non-charge bilayer is composed of, in no particular order, one layer of a charged polymeric material and one layer of a non-charged polymeric material which is capable of being non-covalently bond to the charged polymeric material.

An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide P-type doping for Source and Drain structures and for Polygates; these doping steps are critical to the formation of PMOS transistors. The molecular cluster ions have the chemical form BnHx+ and BnHx− where 10

An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized carborane cluster ions are implanted into semiconductor substrates to perform doping of the substrate. The carborane cluster ions have the chemical form C2B10Hx+, C2B8Hx+ and C4B18Hx+and are formed from carborane cluster molecules of the form C2B10H12 ,C2B8H10 and C4B18H22 The use of such carborane molecular clusters results in higher doping concentrations at lower implant energy to provide high dose low energy implants. In accordance with one aspect of the invention, the carborane cluster molecules may be ionized by direct electron impact ionization or by way of a plasma.

A semiconductor device has an MIS (metal-insulating film-semiconductor) structure, and a film mainly containing Al, O, and N atoms is used on a semiconductor. Alternatively, a semiconductor device has an MIS structure, and a film mainly containing Al, O, and N atoms is provided as a gate insulating film on a channel region between a source and a drain. Characteristics required of a gate insulating film of a 0.05 μm-gate-length-generation semiconductor transistor are satisfied. In particular, no fixed charge is included in the film, and impurity diffusion is reduced.

A method for the manufacturing of nanocellulose. The method includes a first modification of the cellulose material, where the cellulose fibres are treated with an aqueous electrolyte-containing solution of an amphoteric cellulose derivative. The modification is followed by a mechanical treatment. By using this method for manufacturing nanocellulose, clogging of the mechanical apparatus is avoided. Also the nanocellulose is manufactured in accordance with the method and uses of the cellulose.

There are provided an ion-exchange polymer including a structure represented by the following General Formula (1) and a production method therefor, an electrolyte membrane and a production method therefor, and a composition for producing an ion-exchange polymer.In a case where the sum of a1, b1, and c1 is 1.000, a1 is 0.000 to 0.750, b1 is 0.240 to 0.990, and c1 is 0.001 to 0.100. L represents an alkylene group, L1 and L2 each represent a divalent linking group, R1 is a hydrogen atom or an alkyl group, R2 and R3 each represent an alkyl group or an allyl group, X1− and X2− each represent an inorganic or organic anion, and Y represents a halogen atom. Z1 represents —O— or —NRa—, and Ra represents a hydrogen atom or an alkyl group.

A nonvolatile memory cell has charge trapping dielectric (160) which has been modified (i.e. oxidized) adjacent to edges of blocking dielectric (180). The modification reduces the charge-trapping density adjacent to the edges of the blocking dielectric, and hence reduces the leakage current at the edges. Other features are also provided.

The invention belongs to technology field of carrier material for non-viral gene transfection, and relates to a carrier material for non-viral gene transfection, plasmid DNA compound particle and preparation method and administration. The weight ratio of polyethylene imine and hydrophobic unit containing benzene ring is 1:9-4:6.The polyethylene imine is superbranched polyethylene imine (PEI) with average molecular weight of 1.8K-25K.The hydrophobic unit containing benzene ring is one or more of gamma -benzyl-L-glutamic acid, epsi -carbobenzoxy lysine and phenylalanine at any ratio. The water soluble polyethylene imine modified substance of hydrophobic unit containing benzene ring can compound with genic material to form a particle with positive charge on surface and particle diameter of 50-300nm.The compound particle can transfer loaded genic material into cell to realize expression of genic material and complete transfection process. The invention prepared non-gene transfection carrier material has the advantages of low toxicity and high up transfection efficiency; and can be used as transfection agent in vivo and in vitro.

Disclosed are a paper-plastic glue and its preparing method,comprising of high polymer latex 70-90%,resin 5-15%,inorganic powder filler 3-15%,dispersant 0.5-0.8%,thickener 0.2-0.5% and deformer 0.1-0.3%. Its preparing method is:1.pre the deformer with high polymer latex; 2. disperse; 3. add into inorganic filler and disperse;4.add into resin and disperse;5. add into thickener for adjusting the viscosity to be the construction one,the output and package the material.

The invention discloses a hyperbranched polyethylene imine-grafted polyalanine copolymer as shown in formula (I). Hydrophobic polyalanine is grafted on the hyperbranched polyethylene imine, so that integral quantity of electric charge of the copolymer is reduced, and charge density is effectively lowered, and therefore, cytotoxicity of the copolymer is lowered. While being taken as a gene carrier for application, the copolymer can be tightly combined with a gene substance, so that transfection efficiency is high. According to the invention, the hyperbranched polyethylene imine-grafted polyalanine is taken as macro-initiator to initiate L-alanine N-carboxylic acid anhydride to carry out ring opening polymerization to obtain the hyperbranched polyethylene imine-grafted polyalanine copolymer; the preparation process is simple.

A semiconductor device has an MIS (metal-insulating film-semiconductor) structure, and a film mainly containing Al, O, and N atoms is used on a semiconductor. Alternatively, a semiconductor device has an MIS structure, and a film mainly containing Al, O, and N atoms is provided as a gate insulating film on a channel region between a source and a drain. Characteristics required of a gate insulating film of a 0.05 μm-gate-length-generation semiconductor transistor are satisfied. In particular, no fixed charge is included in the film, and impurity diffusion is reduced.

The invention provides a manufacturing method for a gate dielectric layer and a manufacturing method for a transistor. The manufacturing method for the gate dielectric layer comprises the steps that an interface layer is formed on a substrate by the adoption of a thermal growth method; a high-k gate dielectric layer is formed on the interface layer; surface processing is conducted on the interface layer or the high-k gate dielectric layer by the adoption of aqueous solution containing O3 or H2SO4 and H2O2. According to the manufacturing method for the gate dielectric layer and the manufacturing method for the transistor, due to the facts that the best interface layer is formed by the adoption of the thermal growth method, and the surface processing is conducted on the interface layer or the high-k gate dielectric layer by the adoption of the aqueous solution containing O3 or H2SO4 and H2O2, a large number of OH keys which are suitable for improving the coverage rate of the high-k gate dielectric layer are formed on the surface of the interface layer or the high-k gate dielectric layer, the high-k gate dielectric layer can nucleate more easily on the interface layer, and interfacial characterization between the interface layer and the high-k gate dielectric layer is improved.

A method of manufacturing a semiconductor device is described, wherein clusters of N- and P-type dopants are implanted to form the transistor structures in CMOS devices. For example, As4Hx+clusters and either B10Hx− or B10Hx+ clusters are used as sources of As and B doping, respectively, during the implants. An ion implantation system is described for the implantation of cluster ions into semiconductor substrates for semiconductor device manufacturing. A method of producing higher-order cluster ions of As, P, and B is presented, and a novel electron-impact ion source is described which favors the formation of cluster ions of both positive and negative charge states. The use of cluster ion implantation, and even more so the implantation of negative cluster ions, can significantly reduce or eliminate wafer charging, thus increasing device yields. A method of manufacturing a semiconductor device is further described, comprising the steps of providing a supply of dopant atoms or molecules into an ionization chamber, combining the dopant atoms or molecules into clusters containing a plurality of dopant atoms, ionizing the dopant clusters into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ion by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant clusters contain n dopant atoms where n can be 2, 3, 4 or any integer number. This method provides the advantages of increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1 / n times the cluster implantation energy. This is an effective method for making shallow transistor junctions, where it is desired to implant with a low energy per dopant atom.

Techniques for interface charge reduction to improve performance of SiGe channel devices are provided. In one aspect, a method for reducing interface charge density (Dit) for a SiGe channel material includes: contacting the SiGe channel material with an Si-containing chemical precursor under conditions sufficient to form a thin continuous Si layer, e.g., less than 5 monolayers thick on a surface of the SiGe channel material which is optionally contacted with an n-dopant precursor; and depositing a gate dielectric on the SiGe channel material over the thin continuous Si layer, wherein the thin continuous Si layer by itself or in conjunction with n-dopant precursor passivates an interface between the SiGe channel material and the gate dielectric thereby reducing the Dit. A FET device and method for formation thereof are also provided.

A method for treating animal tissue with acylation agents to alter the net charge and net charge density of the treated tissue for therapeutic applications is provided. The method involves applying an alkaline solution to the exposed tissue surface area. This results in deprotonation of ε-amino groups of lysine residues on the exposed tissue proteins so that the tissue proteins have a net charge. Then, an acylating agent is applied and the acylating agent reacts with the tissue protein to form a protein complex having an altered net charge. Acylating agents such as sulfonic acids, sulfonyl chlorides, and acid chlorides can be used. The method can be used to treat a wide variety of human tissues including the human cornea for correcting myopia. The method can also be used to treat skin tissue, so that there is an increase in dermal thickness and pliability. The method can be further used to treat articular cartilage.

Exposing sludge to underwater, high-intensity sparks, to increase cake solids, provide faster settling, and increase the rate of dewatering.

The invention discloses a light-emitting diode epitaxial wafer and belongs to the technical field of semiconductors. The epitaxial wafer comprises a substrate, and a buffer layer, a non-impurity-doped GaN layer, an N-type layer, a multi-quantum well layer and a P-type layer which successively cover the substrate. The multi-quantum well layer is of a multi-period structure, and each period structure comprises a quantum well layer and a quantum barrier layer covering the quantum well layer. The quantum barrier layer closest to the P-type layer is of a superlattice structure. The superlattice structure comprises a plurality of AlxGal-xN sub-layers and GaN sub-layers which grow in an alternating manner, wherein x is larger than zero and less than 1, and the components of Al in the AlxGal-xN sub-layers gradually changes with the growth sequence. According to the invention, the quantum barrier layer, closest to the P-type layer, in the multi-quantum well layer of the epitaxial wafer is set as the superlattice structure, electronic overflow is effectively prevented on one hand, and on the other hand, the cavity injection rate is increased, so that the internal quantum efficiency of the epitaxial wafer is further increased, and the light-emitting efficiency of the light-emitting diode is improved.

The present invention provides a medical device, preferably an ophthalmic device, more preferably a contact lens, which comprises a core material and a biocompatible LbL coating non-covalently attached to said core material. The biocompatible LbL coating comprises at least one charge / non-charge bilayer, wherein said charge / non-charge bilayer is composed of, in no particular order, one layer of a charged polymeric material and one layer of a non-charged polymeric material which is capable of being non-covalently bond to the charged polymeric material.

The invention relates to a gene delivery system containing a target shielding system and a preparation method and application thereof. The gene delivery system consists of a shielding system with a target ligand, a cation polymer material and plasmid DNA, wherein, the cation polymer material and the plasmid DNA are compounded to form compound particles, and the shielding system with the target ligand is shielded on the surface of the compound through electrostatic effect. The gene delivery system containing the target shielding system can transfer a loaded genic material into cells to realize the expression of the genic material and finish a transfection process, and the targeting of gene transfection can be improved. The preparation method has the advantages that: the target ligand is grafted onto the shielding system; on the one hand, the targeting strategy can not affect the compound ability of a cationic polymer to the DNA, on the other hand, the targeting strategy can also guarantee that the target ligand is extended to the periphery of the gene delivery system so as to improve the combination efficiency of the target ligand and a cell surface receptor. The highest transfection efficiency of the gene delivery system to a HeLa cell is 73 percent, and the toxicity of the cell is small.

The invention provides carbon powder. The carbon powder is prepared from the following components in parts by mass: 85-95 parts of bonding resin, 2-8 parts of a coloring agent, 0.1-5 parts of an electric charge control agent, 1-6 parts of de-molding agent and 1-10 parts of a magnetic material. A magnetic material is successfully used in non-magnetic powder, and the related properties of the magnetic material, such as high rigidity, large density and strong dispersity can be utilized, so that the defects of the carbon powder in a developing and photographic fixing process are improved. The effects of the carbon powder are mainly represented in the following two aspects: firstly, the magnetic material is added so that the density of carbon powder particles becomes large, and a powder flying problem in a high-speed printing material can be improved; secondly, the magnetic material is oxide of iron so that the specific resistance of the carbon powder particles can be reduced by the magnetic material, and furthermore, the electric charge uniformity of each carbon powder particle is better and the stability is better; and the problem of shallow color at the later period is well solved.

A hybrid supercapacitor, including at least one negative electrode that includes a statically capacitive active material, an electrochemical redox active material, or a mixture thereof, at least one positive electrode that includes a statically capacitive active material, an electrochemical redox active material, or a mixture thereof, at least one separator that is situated between the at least one negative electrode and the at least one positive electrode, and an electrolyte composition, with the condition that at least one electrode includes a statically capacitive active material, and at least one electrode includes an electrochemical redox active material, the electrolyte composition being a liquid electrolyte composition and including at least one liquid, aprotic, organic solvent, at least one conducting salt, and at least one additive.

The improved emulsion polymerization process of preparing heat resistant alpha-methylstyrene-acrylonitrile copolymer features that 30-50 wt% of the monomers, emulsion and initiator are pre-emulsified; and the rest monomers, emulsion and initiator are emulsified, heated to 65-70 deg.c and polymerized while adding the pre-emulsion until to obtain solid content higher than 36 %, where, the initiator is oil soluble azo diisobutyronitrile or azo diisoheptonitrile. The present invention has stable emulsion system, complete and homogeneous copolymerization, copolymerizing conversion rate as high as 98 %, low residual monomer rate, high Vicat temperature and other advantages.

The invention discloses a preparation method of a Ge-based Metal Oxide Semiconductor (MOS) device with sub-nanometer equivalent to oxide thickness, comprising the steps of 1) cleaning a Ge substrate; 2), performing S passivating; 3), depositing an Al2O3 film on the surface of the Ge substrate in situ;4), depositing an HfO2 film; 5), putting the substrate to a quick annealing furnace to anneal to obtain a finished product. The method obtains a thin aluminum oxide film by in-situ atomic layer deposition, improves interface quality of a gate dielectric film and the Ge substrate, notably improves the electric property of the gate dielectric film and obtains Ge-based MOS device with the Equivalent Oxide Thickness (EOT) of less than 1nm and the leakage current density of less than 2mA / cm2.

The invention provides a thiourea modified polyethyleneimine copolymer which is shown in a formula (I) or a formula (II). The preparation method comprises the following step: under an anhydrous condition, reacting polyethyleneimine shown in the formula (I) or the formula (II) with a compound shown in a formula (III) in an organic solvent to obtain the thiourea modified polyethyleneimine copolymer which is shown in the formula (I) or the formula (II). Due to introduction of the thiourea structure, the polyethyleneimine copolymer has low electric density, so that the cytotoxicity caused by high electric density of polyethyleneimine is reduced, and the biocompatibility is good. Meanwhile, the thiourea modified polyethyleneimine copolymer used as a gene carrier can interact with generic matters through non-charge attracted hydrogen bonds. The nanoparticles formed are slightly slack in structure. After entering cells, the nanoparticles can more effectively release the generic matters into cytoplasm and cell nucleus, so that the transfection efficiency is improved.

The invention relates to a preparation method of a three-proofing fabric finishing agent, which comprises the following steps: (1) evenly mixing raw material monomers for later use, weighing a composite emulsifier and an acetone-water mixed solvent, and evenly mixing the raw material monomers with the composite emulsifier and the mixed solvent to form a mixed solution; (2) stirring the mixed solution, pouring the mixed solution into a homogenizer, and homogenizing to obtain a milk white preemulsion; (3) dropwisely adding a 10 wt% initiator solution into the preemulsion at 50-90 DEG C; and (4) after finishing the dropwise addition, reacting for 5-10 hours while keeping the temperature, cooling to room temperature, and filtering to obtain the product. In comprehensive consideration of raw material sources, functionality, convenience, economy and the like, the invention has the advantages of simple synthesis, low price, low krafft point, wide temperature limit and the like. The invention also discloses a three-proofing fabric finishing agent produced according to the preparation method.