A method of manufacturing a
semiconductor device is described, wherein clusters of N- and P-type dopants are implanted to form the
transistor structures in
CMOS devices. For example, As4Hx+clusters and either B10Hx− or B10Hx+ clusters are used as sources of As and B
doping, respectively, during the implants. An
ion implantation
system is described for the implantation of cluster ions into
semiconductor substrates for
semiconductor device manufacturing. A method of producing higher-order cluster ions of As, P, and B is presented, and a novel
electron-
impact ion source is described which favors the formation of cluster ions of both positive and
negative charge states. The use of cluster
ion implantation, and even more so the implantation of negative cluster ions, can significantly reduce or eliminate
wafer charging, thus increasing device yields. A method of manufacturing a
semiconductor device is further described, comprising the steps of providing a supply of
dopant atoms or molecules into an
ionization chamber, combining the
dopant atoms or molecules into clusters containing a plurality of
dopant atoms, ionizing the dopant clusters into dopant cluster ions, extracting and accelerating the dopant cluster ions with an
electric field, selecting the desired cluster ion by
mass analysis, modifying the final
implant energy of the cluster ion through post-analysis ion
optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant clusters contain n dopant atoms where n can be 2, 3, 4 or any integer number. This method provides the advantages of increasing the dopant
dose rate to n times the implantation current with an equivalent per dopant atom energy of 1 / n times the cluster implantation energy. This is an
effective method for making shallow
transistor junctions, where it is desired to
implant with a low energy per dopant atom.