43results about How to "Less charge" patented technology

An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. The molecular cluster ions have the chemical form BnHx+ and BnHx−, where 10<n<100 and 0≦x≦n+4. The use of such boron hydride clusters results in a dramatic increase in wafer throughput, as well as improved device yields through the reduction of wafer charging. A method of manufacturing a semiconductor device is further described, comprising the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate.

A quantum computer can only function stably if it can execute gates with extreme accuracy. “Topological protection” is a road to such accuracies. Quasi-particle interferometry is a tool for constructing topologically protected gates. Assuming the corrections of the Moore-Read Model for v= 5 / 2's FQHE (Nucl. Phys. B 360, 362 (1991)) we show how to manipulate the collective state of two e / 4-charge anti-dots in order to switch said collective state from one carrying trivial SU(2) charge, |1>, to one carrying a fermionic SU(2) charge |ε>. This is a NOT gate on the {|1>, |ε>} qubit and is effected by braiding of an electrically charged quasi particle σ which carries an additional SU(2)-charge. Read-out is accomplished by σ-particle interferometry.

Apparatus and methods provide thermal management of a propulsion circuit in an electromagnetic munition launcher.

A PDP having a driving circuit that reduces the reset voltage of the PDP driving waveforms to make it possible to use low-voltage elements and to achieve high contrasts is disclosed. Since conventional PDP waveforms require very high reset voltages, it causes a problem of intense background light emissions, low contrasts, use of high-voltage components, and increased circuit costs. According to the driving waveforms of the present invention, relative voltage differences between the address electrode and the X electrode and between the X electrode and the Y electrode are considered to design waveforms of low reset voltages, thereby providing high contrasts and low-cost circuit.

The invention relates to a production method of a single crystal silicon rod, which belongs to the technical field of solar cells. A method for producing single crystal silicon rods, comprising: (1) charging raw materials into a quartz crucible; (2) sending the quartz crucible into a single crystal furnace; (3) performing melting; (4) pulling crystal rods to obtain the first crystal (v) add raw materials; carry out ingot drawing to obtain the second ingot (vi) add raw materials; carry out ingot drawing to obtain the third ingot; (vii) add raw materials; Four ingots; (A) adding raw materials; pulling the ingot to obtain the fifth ingot; (ix) After the finishing process in step (A), the fifth ingot is cooled and taken out, and then the furnace is shut down. In the production method of the single crystal silicon rod of the present invention, barium powder is added during charging and feeding, so that the quartz crucible can be automatically sprayed multiple times while melting the material, and the overall service life of the quartz crucible can be extended.

A pixel array comprises at least one long exposure pixel, short exposure pixel, and a control circuit. The long exposure pixel comprises a first photodiode to generate charges, a first image signal generating module for generating a first image sensing signal; and a first transfer switch device for passing the charges to the first image signal generating module via a first transfer control signal. The control circuit sets the first transfer control signal to be a first predetermined control voltage when the long exposure pixel is in an long exposure phase, and then sets the first transfer control signal to be a second predetermined control voltage when the short exposure pixel is in a short exposure phase.