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A kind of production method of single crystal silicon rod

A production method and technology of monocrystalline silicon rods, which are applied in the field of solar cells, can solve problems such as crystallization, crucible mottling, and silicon leakage accidents, and achieve the effects of reducing crucible mottling, preventing early damage, and prolonging service life

Active Publication Date: 2020-11-03
包头美科硅能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The longest service life of the crucible in the current technology is 240 hours. Calculated on the basis of the average drawing time of each crystal rod being 52 hours, a maximum of 4 crystal rods can be drawn in one furnace, and the raw material and the crucible will continue to react and corrode as the high temperature time increases. It will cause mottling and crystallization in the crucible, and more serious silicon leakage accidents will occur

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0030] The production method of the monocrystalline silicon rod of the present embodiment comprises the following steps:

[0031] (1) Load 320 kilograms of raw materials into the quartz crucible. The size of the quartz crucible is 655 × 510 mm. The raw material is primary polycrystalline. When the raw material is loaded to a distance of 150 mm from the upper edge of the quartz crucible, the charging is stopped, and 3.5 g of barium powder is evenly sprinkled on the The surface of the raw material is within 20mm of the inner wall of the quartz crucible;

[0032] (2) Put the quartz crucible into the single crystal furnace and close the single crystal furnace, turn on the main vacuum pump, and when the furnace pressure is below 40mTorr, close the main pump ball valve of the vacuum pump, let it stand for 5 minutes, and check for leaks to determine whether there is any air leakage ;

[0033] (3) After passing the leak detection, first turn on the bottom heater, increase the power t...

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Abstract

The invention relates to a production method of a single crystal silicon rod, which belongs to the technical field of solar cells. A method for producing single crystal silicon rods, comprising: (1) charging raw materials into a quartz crucible; (2) sending the quartz crucible into a single crystal furnace; (3) performing melting; (4) pulling crystal rods to obtain the first crystal (v) add raw materials; carry out ingot drawing to obtain the second ingot (vi) add raw materials; carry out ingot drawing to obtain the third ingot; (vii) add raw materials; Four ingots; (A) adding raw materials; pulling the ingot to obtain the fifth ingot; (ix) After the finishing process in step (A), the fifth ingot is cooled and taken out, and then the furnace is shut down. In the production method of the single crystal silicon rod of the present invention, barium powder is added during charging and feeding, so that the quartz crucible can be automatically sprayed multiple times while melting the material, and the overall service life of the quartz crucible can be extended.

Description

technical field [0001] The invention relates to a production method of a single crystal silicon rod, which belongs to the technical field of solar cells. Background technique [0002] With the rapid development of the single crystal industry and the rapid increase in the output of single crystal silicon wafers, there are currently two fundamental reasons for limiting the output of single crystal single furnaces. [0003] One is the exhaust problem in the furnace, and the other is that the service life of the quartz crucible cannot meet the requirements of RCZ for pulling multiple crystals. There are two methods of spraying the existing quartz crucibles. One is to spray the crucibles before leaving the factory. The average service life of such crucibles is generally between 150-200 hours. Another method is to add barium powder into the raw material when the crucible is in use, and spray it automatically while melting the material. This method can increase the use time of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B15/02C30B15/10C30B29/06
CPCC30B15/005C30B15/02C30B15/10C30B29/06
Inventor 高利兵孟涛王海庆
Owner 包头美科硅能源有限公司
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