35results about How to "Nucleation is easy" patented technology

The invention discloses a lithium metal composite negative electrode with a lithium-philic and lithium-phobic gradient structure, and a preparation method thereof. The lithium metal composite negativeelectrode is of a three-layer structure, wherein the bottom layer is a 3D porous matrix framework, the middle layer is a lithium-philic layer compounded on the 3D porous matrix framework, and the toplayer is a lithium-phobic layer compounded on the surface of the lithium-philic layer. The preparation method comprises the following steps: (1) preparing a 3D porous matrix skeleton, and cleaning; (2) transferring the 3D porous matrix skeleton to a prepared precursor solution; (3) forming a lithium-philic layer on the 3D porous matrix skeleton in situ by adopting a solvothermal method; (4) modifying a lithium-phobic layer on the lithium-philic layer; and (5) finally filling with lithium by adopting an electro-deposition method. According to the invention, the overpotential in the lithium metal nucleation and deposition process can be reduced by utilizing the lithium-philic layer, and the uniform deposition and dissolution of the lithium metal in the continuous cycle process are realizedby utilizing the characteristic that the lithium ion diffusion is promoted by utilizing the lithium-phobic layer, so that the growth of dendritic crystals is effectively avoided, and the cycle life ofthe lithium metal battery is greatly prolonged.

The purpose of the method developed is to form on top of a heat transfer surface a porous surface layer, which is to be fixed to the surface below it at a temperature and time applicable for industrial production. The heat transfer surface is copper or copper alloy. The powder forming a porous surface is fine-grained copper oxide powder, which is reduced to metallic copper on the heat transfer surface during heat treatment. The invention also relates to the heat transfer surface of copper or copper alloy, on which a porous layer has been formed from metallic copper, which is manufactured by reducing copper oxide powder and is attached using brazing solder.

The invention pertains to processes for separating gases, acid gas, hydrocarbons, air gases, or combinations thereof. The processes may employ using a liquid phase cloud point with or without subsequent liquid-liquid separation. In some embodiments membranes can be employed with reverse osmosis to regenerate a solvent and/or an antisolvent. In some embodiments thermal switching phase changes may be employed during absorption or desorption to facilitate separation.

The invention discloses an Li/SOCl2 nano cobalt phthalocyanine catalyst material for a battery and a preparation method of the Li/SOCl2 nano cobalt phthalocyanine catalyst material, and belongs to the technical field of preparation of Li/SOCl2 catalytic materials for battery electrodes. The bulk solid cobalt phthalocyanine is firstly synthesized through microwave reaction; and then nano cobalt phthalocyanine is prepared by a recrystallization method. The method comprises the steps as follows: the bulk solid cobalt phthalocyanine is firstly dissolved into a concentrated sulfuric acid; a very dilute potassium hydroxide solution is added and quickly stirred for severe neutralization reaction; accelerated nucleation of the cobalt phthalocyanine is relatively easy; and the nano cobalt phthalocyanine is generated. The prepared nano cobalt phthalocyanine has the advantages of being high in purity, short in cycle, low in energy consumption and economical; large-scale production is facilitated; and the nano cobalt phthalocyanine catalyst material prepared by the method has relatively long discharge time and relatively high discharge energy, and can be widely used as an Li/SOCl2 battery catalyst.

The invention relates to a potassium sodium niobate-bismuth sodium zirconate lead-free piezoelectric single crystal and a growing method thereof. The chemical formula of the potassium sodium niobate-bismuth sodium zirconate lead-free piezoelectric single crystal is (1-y)(KxNa(1-x))NbO(3-y)(Bi0.5Na0.5)ZrO3, wherein x is larger than or equal to 0.4 and smaller than or equal to 0.6, and y is larger than or equal to 0 and smaller than or equal to 0.1. According to the method, raw materials and a growth auxiliary are mixed and presintered, and the potassium sodium niobate-bismuth sodium zirconate lead-free piezoelectric single crystal is obtained by growing with a Bridgman-Stockbarger method; the potassium sodium niobate-bismuth sodium zirconate lead-free piezoelectric single crystal growing with the Bridgman-Stockbarger method after addition of the growth auxiliary has the advantages that a nucleus is formed easily, the crystal size is larger (2-20 mm), fewer cracks are formed and the like.

An InN nanorod epitaxial wafer grown on an aluminum foil substrate (1) sequentially comprises the aluminum foil substrate (1), an amorphous aluminum oxide layer (2), an AlN layer (3) and an InN nanorod layer, (4) from bottom to top. The wafer can be prepared by pretreating the aluminum foil substrate with an oxidized surface and carrying out an in-situ annealing treatment; then, in a molecular beam epitaxial growth process, forming AlN nucleation sites on the annealed aluminum foil substrate, nucleating on the AlN and growing InN nanorods on the AlN. where the substrate temperature is 400-700° C., the pressure of a reaction chamber is 4.0-10.0×10⁻⁵ Torr and the beam ratio of V/III is 20-40.

The invention discloses aluminum precursor coated titanium dioxide. The surface of titanium dioxide is coated with an aluminum oxide precursor. The invention also discloses a preparation method of the aluminum precursor coated titanium dioxide and a method for preparing the aluminum coated titanium dioxide. The coating process is different from a common aluminum coating method in which hydrated alumina is directly formed and coated on titanium dioxide. According to the preparation method, the aluminum precursor is firstly generated and coats the surface of the titanium dioxide, and the aluminum precursor is of a molecular chain structure, so that the precursor is more easily coated on the surface of the titanium dioxide; the surface of the aluminum oxide precursor in the solution has a large number of hydroxyl groups, so that the repulsive interaction among particles is relatively large, the self-phase nucleation difficulty is high, and heterogeneous nucleation is facilitated, so that titanium dioxide is perfectly coated, then water is removed through drying, and non-bridging hydroxyl groups of adjacent colloidal particles are spontaneously converted into bridging hydroxyl groups; meanwhile, coordination water of a gel part structure is removed, and bridging hydroxyl groups are also formed among coating particles, so that a coating layer on the surface of the titanium dioxide is uniform and compact, and the weather resistance of the titanium dioxide is superior to that of the titanium dioxide prepared by a traditional aluminum coating method.

The invention relates to a CF/PEEK composite material with a full transverse crystal structure and a preparation method thereof. The method comprises the following steps: (1) carrying out high-temperature decomposition on an original sizing agent on the surface of CF; (2) simultaneously carrying out microwave radiation and ultraviolet irradiation on the CF in a saturated water vapor environment, and marking a product as ACF; (3) immersing the ACF into the polyetherimide/dichloromethane/carbon nanotube suspension, taking out, and drying to obtain sized modified carbon fiber MCF; (4) laminatingand hot-pressing the MCF and a PEEK material; (5) performing instantaneous pressure application and unloading in the cooling process to enable the resin to obtain perturbation shear flow, and inducingnucleation and growth of the full-transverse crystal structure to obtain the CF/PEEK composite material with the full transverse crystal structure. The bending strength of the finally prepared composite material is 750-900 MPa, the bending modulus of the finally prepared composite material is 63-75 GPa, and the interlayer shear strength of the finally prepared composite material is 90-100 MPa. The method disclosed by the invention has the characteristics of high efficiency, environmental friendliness and capability of realizing large-scale production, and the prepared composite material can replace metal to be applied to the fields of aerospace, machinery, automobiles, rail transit and the like.

The embodiment of the invention discloses a method for preparing a polycrystalline SiC film through a sapphire substrate and relates to the technical field of semiconductor film materials. The method comprises the steps of putting the cleaned sapphire substrate (1) and an SiC target material into a vacuum reaction cavity, pumping the vacuum reaction cavity into a high vacuum state, and heating the sapphire substrate (1); introducing argon and oxygen into the vacuum reaction cavity and maintaining air pressure; executing a magnetron sputtering process to obtain a transition layer (1) and a transition layer (3), wherein the sputtering process comprises pre-sputtering and formal sputtering; closing an oxygen channel, only introducing argon and maintaining the air pressure; executing the magnetron sputtering process again to obtain an SiC film (4); cooling the vacuum reaction cavity to a room temperature and then taking out a sample; and putting the taken sample into a quick annealing oven for thermal annealing. The method is suitable for preparation of the polycrystalline SiC film on the sapphire substrate.

The invention provides a preparation method of a high-quality wafer-level graphene single crystal. The method comprises the following steps: placing plasma-treated metal foil into a reaction furnace,introducing an inert atmosphere, performing heating to an annealing temperature, introducing hydrogen gas, and performing annealing treatment, wherein the metal foil is one selected from the group consisting of copper foil, nickel foil, molybdenum foil and cobalt foil, the plasma treatment atmosphere is at least one selected from the group consisting of air, hydrogen gas, argon gas, oxygen gas, and nitrogen gas, the power is 100-150 W, the pressure is 400-500 Pa, and the time is 1-30 min; and introducing a carbon source into the reaction furnace, adjusting the annealing temperature to a growthtemperature of the graphene single crystal, starting growth of the graphene single crystal, and after growth is completed, performing cooling to a room temperature.

The invention discloses a method for growing GaAs nanowires on a Si substrate, comprising the following steps: (1) selecting a substrate and crystal orientation: selecting Si (111) as the substrate; (2) cleaning and re-oxidizing the surface of the substrate; (3) Substrate annealing treatment: put the substrate into the reaction chamber, and anneal the treated Si substrate at 690-720°C for 10-15 minutes; (4) Preparation of GaAs nanowires: use molecular beam The epitaxial growth process uses a two-step temperature method to grow GaAs nanowires on the Si substrate after the above treatment. The invention has the advantages of simple growth process, low preparation cost, and can grow GaAs nanowires with high density and good shape. At the same time, the GaAs nano wire crystal prepared by the invention has good quality, large specific surface area, no heterogeneous element impurities, and high luminous efficiency and light absorption rate.

The invention provides a ZSM-5 molecular sieve and a preparation method thereof. The preparation method includes the following steps: a) mixing an aluminum source, an alkali source and part of total water consumption, and then adding a template for mixing; b) adding a silicon source, and stirring the materials at 100 DEG C-120 DEG C for crystallization; and c) adding the remaining water for continuous crystallization at 150 DEG C-180 DEG C to obtain the ZSM-5 molecular sieve. The ZSM-5 molecular sieve with good crystal form, high crystallinity and high yield is prepared by using granular silica gel, the cheap template and a small amount of water and adjusting the template concentration in the crystallization process and changing the crystallization temperature by adding water in stages. The method has the advantages of low cost, short synthesis cycle, simple process and easy industrialization.