This invention provides a power
semiconductor package structure with electrothermal topology separation and its formation method. The
package structure includes: a power
semiconductor chip having an active device region and a
peripheral non-active region; a first terminal and a second terminal located on one side of the first surface of the
chip; a vertical conductive structure located in the
peripheral non-active region and connected to the first terminal; a back conductive layer connected to the vertical conductive structure and the active device region; and a thermally conductive insulating layer and a bottom heat
diffusion layer located on the back side of the back conductive layer. The first terminal, the vertical conductive structure, the back conductive layer, the active device region, and the second terminal are sequentially electrically connected to form a conductive path. The thermally conductive insulating layer and the bottom heat
diffusion layer do not carry the main current and are electrically isolated from the conductive path. By establishing
physical separation between the main current path and the
heat flow path in the
package architecture, the
current loop area is reduced to decrease parasitic
inductance, the heat dissipation area is increased, and the
thermal resistance is reduced, thereby improving reliability and service life under high-
power cycling.