The invention discloses an in-situ test
system and method for a high-temperature
integrated circuit, relates to the technical field of
integrated circuit test, and aims to solve the problem that an existing high-temperature test method for the
integrated circuit cannot accurately test electrical parameter performance at a target temperature. The
system at least comprises a test socket, a constant temperature source, a heat insulation device, a test
daughter board, a test mother board and
automatic test equipment, an integrated circuit to be tested is mounted on the test
daughter board through the test socket, and the heat insulation device is in contact connection with one surface, where the test socket is mounted, of the test
daughter board and at least covers the test daughter board except the test socket; the constant-temperature source comprises a
heat flow cover, the
heat flow cover is buckled on the outer side of the test socket, and a
closed space is formed by the
heat flow cover and the heat insulation device; the test daughter board is plugged on the test mother board, and the test mother board is assembled on the
automatic test equipment. The high-temperature integrated circuit in-situ test
system provided by the invention is used for improving the accuracy of testing the electrical parameter performance of the integrated circuit in a high-temperature environment.