Power supply module capable of automatically restarting during single-particle latch-up and power supply restarting method

Abstract

The invention relates to a power supply module capable of automatically restarting during single-particle latch-up and a power supply restarting method. The power supply module comprises a direct-current voltage source V1, a switch SW1, a switch SW2 and a voltage converter U1, wherein the direct-current voltage source V1 is used for outputting direct-current voltage, and the direct-current voltage serves as input voltage of the voltage converter U1; the switch SW1 and the switch SW2 are used for controlling connection or disconnection between the direct-current voltage source V1 and the voltage converter U1 through switch switching, and when single-particle latch occurs, automatic restart of the voltage converter U1 is achieved through on-off circuit switching. The voltage converter U1 is used for converting and outputting the input direct-current voltage into the voltage required by a rear-end chip or module, and meanwhile, the output voltage of the voltage converter U1 is also used as an enable signal to control the on or off of the switch SW1 and the switch SW2. The power supply module can be automatically restarted when single-particle latch occurs, and long-term reliable operation of a spacecraft electronic system in an extreme environment is ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of power supply circuit protection, in particular to a power module capable of automatic restart during single event latch-up and a power restart method. BACKGROUND

[0002] In a spacecraft electronic system, a power module is responsible for providing stable direct current voltage for various chips and functional modules, and is one of the core components to ensure the normal operation of the spacecraft. However, when the spacecraft operates in space, it is long-term exposed to a radiation environment composed of high-energy charged particles (such as protons, neutrons, alpha particles, heavy ions, etc.). These high-energy particles can penetrate the protective layer of the spacecraft and interact with semiconductor devices in the electronic system, causing single event effects (SEEs), which seriously affect the reliability and life of the spacecraft.

[0003] Single event effects mainly include single event upset (SEU), single event transient (SET), single event latch-up (SEL), etc. Among them, single event latch-up is particularly harmful to the power module. At present, the power module in the spacecraft electronic system usually adopts the architecture of direct current input→power conversion chip→direct current output, and its design mainly focuses on conversion efficiency, output stability and other conventional indicators, but lacks a self-protection mechanism against single event latch-up. When SEL occurs in the power module, the power module will have no output, resulting in the inability of the back-end chip or module to work normally. Moreover, the long-term inability of the power module to recover autonomously will also cause the surface temperature of the device to be too high (above 300℃), and the device will be permanently damaged. SUMMARY

[0004] Therefore, it is necessary to provide a power module capable of automatic restart during single event latch-up and a power restart method to improve the anti-radiation capability of the power module and ensure the long-term reliable operation of the spacecraft electronic system in extreme environments.

[0005] A power module capable of automatic restart during single event latch-up, comprising: a direct current voltage source V1, a switch SW1, a switch SW2 and a voltage converter U1;

[0006] The direct current voltage source V1 is configured to output a direct current voltage and take the direct current voltage as an input voltage of the voltage converter U1;

[0007] The switches SW1 and SW2 are configured to control the on-off path between the direct current voltage source V1 and the voltage converter U1 through switching, and to realize automatic restart of the voltage converter U1 through on-off path switching when single event latch-up occurs;

[0008] The voltage converter U1 is used to convert the input DC voltage to the required voltage of the back-end chip or module. Meanwhile, the output voltage of the voltage converter U1 is also used as an enable signal to control the opening and closing of the switches SW1 and SW2.

[0009] In one embodiment, the switch SW1 is used to control the opening and closing of one of the input voltages of the voltage converter U1, which includes an N-channel MOSFET tube Q1, a P-channel MOSFET tube Q2, a resistor R1, and a resistor R2.

[0010] The drain of the N-channel MOSFET tube Q1 is connected to the DC voltage source V1 through the resistor R1 on one side and to the gate of the P-channel MOSFET tube Q2 on the other side. The source of the N-channel MOSFET tube Q1 is grounded through the resistor R2. The gate of the N-channel MOSFET tube Q1 is connected to the output of the voltage converter U1, which is used as an enable pin of the switch SW1 to receive the output voltage of the voltage converter U1 and control the opening and closing of the switch SW1 based on the input level state of itself, and at the same time control the output voltage V sw1 of the drain of the P-channel MOSFET tube Q2.

[0011] The source of the P-channel MOSFET tube Q2 is connected to the DC voltage source V1. The drain of the P-channel MOSFET tube Q2 is connected to the input of the voltage converter U1, which is used to output the voltage V sw1 to the input of the voltage converter U1.

[0012] In one embodiment, the logic of the gate of the N-channel MOSFET tube Q1 controlling the opening and closing of the switch SW1 based on the input level state of itself is as follows:

[0013] When the input level of the gate of the N-channel MOSFET tube Q1 is high V H , the N-channel MOSFET tube Q1 is turned on, the input voltage of the gate of the P-channel MOSFET tube Q2 is pulled down through the voltage division of the resistor R1 and the resistor R2, the P-channel MOSFET tube Q2 is turned on, the switch SW1 is opened, and the output voltage V sw1 of the drain of the P-channel MOSFET tube Q2 is equal to the DC voltage output by the DC voltage source V1, at this time, the DC voltage output by the DC voltage source V1 is input to the voltage converter U1 through the switch SW1; when the input level of the gate of the N-channel MOSFET tube Q1 is low V LWhen the N-channel MOSFET Q1 is off, the DC voltage output from the DC voltage source V1 is directly input to the gate of the P-channel MOSFET Q2 through resistor R1. The input voltage to the gate of the P-channel MOSFET Q2 is pulled high, the P-channel MOSFET Q2 is off, switch SW1 is closed, and the output voltage V at the drain of the P-channel MOSFET Q2 is controlled. sw1 When the value equals 0, the DC voltage output by the DC voltage source V1 is input to the voltage converter U1 through the switch SW2.

[0014] In one embodiment, switch SW2 is used to control the opening or closing of another input voltage of voltage converter U1, including N-channel MOSFET Q3, P-channel MOSFET Q4, P-channel MOSFET Q5, resistor R3 and resistor R4.

[0015] In this configuration, the drain of the N-channel MOSFET Q3 is connected to the DC voltage source V1 via resistor R3, and to the gate of the P-channel MOSFET Q4 via resistor R4. The source of the N-channel MOSFET Q3 is grounded via resistor R4. The gate of the N-channel MOSFET Q3 is connected to the output of the voltage converter U1, serving as the enable pin of switch SW2 to receive the output voltage of voltage converter U1 and control the opening or closing of switch SW2 based on its own input level state. Simultaneously, it controls the output voltage V at the drain of the P-channel MOSFET Q5. sw2 ;

[0016] The source of P-channel MOSFET Q4 is connected to DC voltage source V1; the drain of P-channel MOSFET Q4 is connected to the gate of P-channel MOSFET Q5.

[0017] The source of the P-channel MOSFET Q5 is connected to the DC voltage source V1; the drain of the P-channel MOSFET Q5 is connected to the input terminal of the voltage converter U1, used to output voltage V. sw2 To the input terminal of voltage converter U1.

[0018] In one embodiment, the logic for controlling the opening or closing of switch SW2 based on its own input level state of the gate of N-channel MOSFET Q3 is as follows:

[0019] When the gate input level of the N-channel MOSFET Q3 is high, V HWhen the N-channel MOSFET Q3 is turned on, the voltage is divided by resistors R3 and R4, pulling down the gate input voltage of the P-channel MOSFET Q4, causing Q4 to turn on. This pulls up the gate input voltage of the P-channel MOSFET Q5, causing Q5 to turn off. Switch SW2 is then closed, controlling the output voltage V at the drain of the P-channel MOSFET Q5. sw2 When the input level is equal to 0, the DC voltage output from DC voltage source V1 is input to voltage converter U1 through switch SW1; when the input level of the gate of N-channel MOSFET Q3 is low, V L When the N-channel MOSFET Q3 is off, the DC voltage output from DC voltage source V1 is directly input to the gate of P-channel MOSFET Q4 through resistor R3, pulling up the input voltage of P-channel MOSFET Q4 and turning it off. Conversely, the input voltage of P-channel MOSFET Q5 is pulled down, turning it on. Switch SW2 then turns on and controls the output voltage V at the drain of P-channel MOSFET Q5. sw2 It is equal to the DC voltage output by DC voltage source V1. At this time, the DC voltage output by DC voltage source V1 is input to voltage converter U1 through switch SW2.

[0020] In one embodiment, an input level greater than or equal to the gate threshold voltage of the MOSFET is a high level, and an input level less than the gate threshold voltage of the MOSFET is a low level.

[0021] In one embodiment, the maximum response time of the N-channel MOSFET is 40 ns, the maximum response time of the P-channel MOSFET is 100 ns, the maximum response time of switch SW1 is 140 ns, and the maximum response time of switch SW2 is 240 ns.

[0022] A power restart method in the event of a single-event latch-up, the method being implemented based on the aforementioned power supply module that automatically restarts in the event of a single-event latch-up, the method comprising the following steps:

[0023] Step 1, Power-on: DC voltage source V1 goes from zero to output DC voltage. At this time, the gate input level of the N-channel MOSFETs of switches SW1 and SW2 is low. Switch SW1 is closed, and switch SW2 is open. The DC voltage is input to voltage converter U1 through switch SW2. Voltage converter U1 enters normal operating state and outputs voltage V normally. out To the backend chip or module, while maintaining normal output voltage V out To the gates of the N-channel MOSFETs of switches SW1 and SW2;

[0024] Step 2, Switching: After the power supply is turned on, the gate input level of the N-channel MOSFETs of switches SW1 and SW2 is high. At this time, switch SW1 is turned on, and the DC voltage is input to the voltage converter U1 through switch SW1. After the maximum response time of switch SW1 is reached, switch SW2 is turned off, and the voltage converter U1 continues to operate normally.

[0025] Step 3, Automatic Restart: When a single-event latch-up occurs, the output voltage V of voltage converter U1... out When the input level equals 0, the gate input level of the N-channel MOSFETs of switches SW1 and SW2 is low. At this time, switch SW1 is closed and switch SW2 is open. After the maximum response time of switch SW2, the DC voltage is input to voltage converter U1 through switch SW2, controlling voltage converter U1 to restart and continue to output voltage V normally. out To the backend chip or module, while maintaining normal output voltage V out To the gates of the N-channel MOSFETs of switches SW1 and SW2.

[0026] The aforementioned power module and restart method for automatic restart during single-event latch-up control control the switching of two switches based on the output voltage of the voltage converter in the power module, thereby controlling the connection or disconnection between the DC voltage source and the voltage converter. In the event of a single-event latch-up, the voltage converter is automatically restarted by switching the on / off circuit. The restart does not require intervention from external systems such as spacecraft maintenance personnel, and has a fast restart response time. This avoids the problem of the power module not outputting for a long time due to latch-up, which could lead to the burnout of components due to high temperature. It solves the problems of power failure and communication abnormalities in spacecraft electronic systems caused by power module failure, improves the radiation resistance of the power module, and ensures the long-term reliable operation of spacecraft electronic systems in extreme environments. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the structure of a power module that automatically restarts during a single-event latch-up, as shown in one embodiment.

[0028] Figure 2 This is a schematic diagram of the structure of switch SW1 in one embodiment;

[0029] Figure 3 This is a timing control diagram of switch SW1 in one embodiment;

[0030] Figure 4 This is a schematic diagram of the structure of switch SW2 in one embodiment;

[0031] Figure 5 This is a timing control diagram of switch SW2 in one embodiment. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0033] In one embodiment, such as Figure 1 As shown, a power supply module for automatic restart during single-event latch-up is provided, including: a DC voltage source V1, a switch SW1, a switch SW2, and a voltage converter U1;

[0034] DC voltage source V1 is used to output DC voltage and uses the DC voltage as the input voltage of voltage converter U1;

[0035] Switches SW1 and SW2 are used to switch the connection or disconnection between DC voltage source V1 and voltage converter U1, and to automatically restart voltage converter U1 by switching the connection and disconnection in the event of a single-event latch-up.

[0036] Voltage converter U1 is used to convert the input DC voltage to the output voltage required by the back-end chip or module. At the same time, the output voltage of voltage converter U1 is also used as an enable signal to control the opening or closing of switches SW1 and SW2.

[0037] Figure 1 In the diagram, G, S, and D represent the gate, source, and drain of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), respectively.

[0038] In one embodiment, switch SW1 is used to control the on or off of one of the input voltages of voltage converter U1, such as... Figure 2 As shown, switch SW1 includes an N-channel MOSFET Q1, a P-channel MOSFET Q2, resistors R1 and R2.

[0039] In this configuration, the drain of the N-channel MOSFET Q1 is connected to the DC voltage source V1 via resistor R1 and to the gate of the P-channel MOSFET Q2 via resistor R2. The source of the N-channel MOSFET Q1 is grounded via resistor R2. The gate of the N-channel MOSFET Q1 is connected to the output of the voltage converter U1, serving as the enable pin of the switch SW1 to receive the output voltage of the voltage converter U1 and control the opening or closing of the switch SW1 based on its own input level state. Simultaneously, it controls the output voltage V at the drain of the P-channel MOSFET Q2. sw1 The source of the P-channel MOSFET Q2 is connected to the DC voltage source V1; the drain of the P-channel MOSFET Q2 is connected to the input terminal of the voltage converter U1, used to output voltage V.sw1 To the input terminal of voltage converter U1.

[0040] In one embodiment, such as Figure 3 As shown, in switch SW1, under the condition that the resistance values ​​of resistors R1 and R2 are satisfied, the logic of the gate of N-channel MOSFET Q1 controlling the opening or closing of switch SW1 based on its own input level state is as follows:

[0041] When the gate input level of the N-channel MOSFET Q1 is high, V H When the N-channel MOSFET Q1 is turned on, the voltage is divided by resistors R1 and R2, pulling down the gate input voltage of the P-channel MOSFET Q2. The P-channel MOSFET Q2 then turns on, switch SW1 is activated, and the output voltage V at the drain of the P-channel MOSFET Q2 is controlled. sw1 This is equal to the DC voltage output by DC voltage source V1. At this time, the DC voltage output by DC voltage source V1 is input to voltage converter U1 through switch SW1; when the input level of the gate of N-channel MOSFET Q1 is low level V... L When the N-channel MOSFET Q1 is off, the DC voltage output from the DC voltage source V1 is directly input to the gate of the P-channel MOSFET Q2 through resistor R1. The input voltage to the gate of the P-channel MOSFET Q2 is pulled high, the P-channel MOSFET Q2 is off, switch SW1 is closed, and the output voltage V at the drain of the P-channel MOSFET Q2 is controlled. sw1 When the value equals 0, the DC voltage output by the DC voltage source V1 is input to the voltage converter U1 through the switch SW2.

[0042] In one embodiment, switch SW2 is used to control the opening or closing of another input voltage of voltage converter U1, such as... Figure 4 As shown, switch SW2 includes N-channel MOSFET Q3, P-channel MOSFET Q4, P-channel MOSFET Q5, resistor R3, and resistor R4.

[0043] In this configuration, the drain of the N-channel MOSFET Q3 is connected to the DC voltage source V1 via resistor R3, and to the gate of the P-channel MOSFET Q4 via resistor R4. The source of the N-channel MOSFET Q3 is grounded via resistor R4. The gate of the N-channel MOSFET Q3 is connected to the output of the voltage converter U1, serving as the enable pin of switch SW2 to receive the output voltage of voltage converter U1 and control the opening or closing of switch SW2 based on its own input level state. Simultaneously, it controls the output voltage V at the drain of the P-channel MOSFET Q5. sw2The source of P-channel MOSFET Q4 is connected to DC voltage source V1; the drain of P-channel MOSFET Q4 is connected to the gate of P-channel MOSFET Q5; the source of P-channel MOSFET Q5 is connected to DC voltage source V1; the drain of P-channel MOSFET Q5 is connected to the input terminal of voltage converter U1 for output voltage V. sw2 To the input terminal of voltage converter U1.

[0044] In one embodiment, such as Figure 5 As shown, in switch SW2, given the resistance values ​​of resistors R3 and R4, the logic by which the gate of the N-channel MOSFET Q3 controls the opening or closing of switch SW2 based on its own input level state is as follows:

[0045] When the gate input level of the N-channel MOSFET Q3 is high, V H When the N-channel MOSFET Q3 is turned on, the voltage is divided by resistors R3 and R4, pulling down the gate input voltage of the P-channel MOSFET Q4, causing Q4 to turn on. This pulls up the gate input voltage of the P-channel MOSFET Q5, causing Q5 to turn off. Switch SW2 is then closed, controlling the output voltage V at the drain of the P-channel MOSFET Q5. sw2 When the input level is equal to 0, the DC voltage output from DC voltage source V1 is input to voltage converter U1 through switch SW1; when the input level of the gate of N-channel MOSFET Q3 is low, V L When the N-channel MOSFET Q3 is off, the DC voltage output from DC voltage source V1 is directly input to the gate of P-channel MOSFET Q4 through resistor R3, pulling up the input voltage of P-channel MOSFET Q4 and turning it off. Conversely, the input voltage of P-channel MOSFET Q5 is pulled down, turning it on. Switch SW2 then turns on and controls the output voltage V at the drain of P-channel MOSFET Q5. sw2 It is equal to the DC voltage output by DC voltage source V1. At this time, the DC voltage output by DC voltage source V1 is input to voltage converter U1 through switch SW2.

[0046] In one embodiment, an input level greater than or equal to the gate threshold voltage of the MOSFET (e.g., 1.2V) is a high level, and an input level less than the gate threshold voltage of the MOSFET is a low level.

[0047] In one embodiment, the maximum response time of the N-channel MOSFET is 40 ns, the maximum response time of the P-channel MOSFET is 100 ns, the maximum response time of switch SW1 is 140 ns, and the maximum response time of switch SW2 is 240 ns.

[0048] It should be noted that the MOSFETs in the power module provided in this application all have a gate threshold voltage V. GS(th) The requirement is that the gate voltage V is a prerequisite for the normal operation of a MOSFET. GS ≥V GS(th) V in this application GS This is supplied by a back-end voltage converter, therefore the output voltage of the back-end voltage converter must be greater than or equal to V. GS(th) The voltage.

[0049] Furthermore, the switches composed of N-channel MOSFETs and P-channel MOSFETs used in the power module can be replaced by other devices such as transistors.

[0050] Furthermore, in addition to using a two-way switch switching method, the power module provided in this application can also use three or more switches to switch more power conversion chips.

[0051] In one embodiment, a power restart method is provided in the event of a single-event latch-up. The method is implemented based on the aforementioned power module that automatically restarts in the event of a single-event latch-up. The method includes the following steps:

[0052] Step 1, Power-on: DC voltage source V1 goes from zero to output DC voltage. At this time, the gate input level of the N-channel MOSFETs of switches SW1 and SW2 is low. Switch SW1 is closed, and switch SW2 is open. The DC voltage is input to voltage converter U1 through switch SW2. Voltage converter U1 enters normal operating state and outputs voltage V normally. out To the backend chip or module, while maintaining normal output voltage V out To the gates of the N-channel MOSFETs of switches SW1 and SW2.

[0053] Step 2, Switching: After the power supply is turned on, the gate input level of the N-channel MOSFETs of switches SW1 and SW2 is high. At this time, switch SW1 is turned on, and the DC voltage is input to the voltage converter U1 through switch SW1. After the maximum response time (100ns) of switch SW1 is reached, switch SW2 is turned off, and the voltage converter U1 continues to operate normally.

[0054] Step 3, Automatic Restart: When a single-event latch-up occurs, the output voltage V of voltage converter U1...out When the input level equals 0, the gate input level of the N-channel MOSFETs of switches SW1 and SW2 is low. At this time, switch SW1 is off and switch SW2 is on. After the maximum response time of switch SW2 (240ns), the DC voltage is input to voltage converter U1 through switch SW2, controlling voltage converter U1 to restart and continue to output voltage V normally. out To the backend chip or module, while maintaining normal output voltage V out To the gates of the N-channel MOSFETs of switches SW1 and SW2.

[0055] In summary, the aforementioned power module and restart method for automatic restart during single-event latch-up control use the output voltage of the voltage converter in the power module to control the switching of two switches, thereby controlling the connection or disconnection between the DC voltage source and the voltage converter. This achieves the function of automatically restarting the voltage converter by switching the on / off circuit when a single-event latch-up occurs, without the need for intervention from external systems such as spacecraft maintenance personnel. It has a fast restart response time, which can prevent the power module from burning out due to high temperature caused by prolonged lack of output during latch-up. It solves the problems of power failure and communication abnormalities in spacecraft electronic systems caused by power module failure, improves the radiation resistance of the power module, and ensures the long-term reliable operation of spacecraft electronic systems in extreme environments.

[0056] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0057] The above embodiments are merely illustrative of several implementation methods of this application, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application.

Claims

1. A power module that automatically restarts upon single-event latch-up, characterized in that, The power supply module includes: a DC voltage source V1, a switch SW1, a switch SW2, and a voltage converter U1; The DC voltage source V1 is used to output DC voltage and uses the DC voltage as the input voltage of the voltage converter U1; The switches SW1 and SW2 are used to control the connection or disconnection between the DC voltage source V1 and the voltage converter U1 by switching, and to realize the automatic restart of the voltage converter U1 by switching the connection and disconnection when a single-event latch-up occurs. The voltage converter U1 is used to convert the input DC voltage into the voltage required by the back-end chip or module. At the same time, the output voltage of the voltage converter U1 is also used as an enable signal to control the opening or closing of the switches SW1 and SW2.

2. The power module with automatic restart during single-event latch-up as described in claim 1, characterized in that, The switch SW1 is used to control the opening or closing of one of the input voltages of the voltage converter U1, and includes an N-channel MOSFET Q1, a P-channel MOSFET Q2, a resistor R1, and a resistor R2. In this configuration, the drain of the N-channel MOSFET Q1 is connected to the DC voltage source V1 via resistor R1 and to the gate of the P-channel MOSFET Q2 via resistor R2; the source of the N-channel MOSFET Q1 is grounded via resistor R2; the gate of the N-channel MOSFET Q1 is connected to the output terminal of the voltage converter U1, serving as the enable pin of switch SW1 to receive the output voltage of the voltage converter U1 and control the opening or closing of switch SW1 based on its own input level state, while simultaneously controlling the output voltage V at the drain of the P-channel MOSFET Q2. sw1 ; The source of the P-channel MOSFET Q2 is connected to the DC voltage source V1; the drain of the P-channel MOSFET Q2 is connected to the input terminal of the voltage converter U1, for outputting voltage V. sw1 To the input terminal of the voltage converter U1.

3. A power module for automatic restart during single-event latch-up as described in claim 2, characterized in that, The logic for controlling the opening or closing of switch SW1 based on its own input level state of the gate of the N-channel MOSFET Q1 is as follows: When the gate input level of the N-channel MOSFET Q1 is high level V H When the N-channel MOSFET Q1 is turned on, the voltage is divided by resistors R1 and R2, pulling down the input voltage at the gate of the P-channel MOSFET Q2. The P-channel MOSFET Q2 then turns on, switch SW1 is activated, and the output voltage V at the drain of the P-channel MOSFET Q2 is controlled. sw1 The DC voltage output by the DC voltage source V1 is equal to the DC voltage output by the DC voltage source V1. At this time, the DC voltage output by the DC voltage source V1 is input to the voltage converter U1 through the switch SW1; when the input level of the gate of the N-channel MOSFET Q1 is low level V... L When the N-channel MOSFET Q1 is turned off, the DC voltage output from the DC voltage source V1 is directly input to the gate of the P-channel MOSFET Q2 through resistor R1. The input voltage to the gate of the P-channel MOSFET Q2 is pulled high, the P-channel MOSFET Q2 is turned off, switch SW1 is closed, and the output voltage V at the drain of the P-channel MOSFET Q2 is controlled. sw1 When the value equals 0, the DC voltage output by the DC voltage source V1 is input to the voltage converter U1 through the switch SW2.

4. A power supply module for automatic restart during single-event latch-up as described in claim 1, characterized in that, The switch SW2 is used to control the opening or closing of another input voltage of the voltage converter U1, and includes N-channel MOSFET Q3, P-channel MOSFET Q4, P-channel MOSFET Q5, resistor R3 and resistor R4. In this configuration, the drain of the N-channel MOSFET Q3 is connected to the DC voltage source V1 via resistor R3 and to the gate of the P-channel MOSFET Q4 via resistor R4; the source of the N-channel MOSFET Q3 is grounded via resistor R4; the gate of the N-channel MOSFET Q3 is connected to the output terminal of the voltage converter U1, serving as the enable pin of switch SW2 to receive the output voltage of the voltage converter U1 and control the opening or closing of switch SW2 based on its own input level state, while simultaneously controlling the output voltage V at the drain of the P-channel MOSFET Q5. sw2 ; The source of the P-channel MOSFET Q4 is connected to the DC voltage source V1; the drain of the P-channel MOSFET Q4 is connected to the gate of the P-channel MOSFET Q5. The source of the P-channel MOSFET Q5 is connected to the DC voltage source V1; the drain of the P-channel MOSFET Q5 is connected to the input terminal of the voltage converter U1, for outputting voltage V. sw2 To the input terminal of the voltage converter U1.

5. A power module for automatic restart during single-event latch-up as described in claim 4, characterized in that, The logic for controlling the opening or closing of switch SW2 based on its own input level state of the gate of the N-channel MOSFET Q3 is as follows: When the gate input level of the N-channel MOSFET Q3 is high level V H When the N-channel MOSFET Q3 is turned on, the voltage is divided by resistors R3 and R4, pulling down the input voltage at the gate of the P-channel MOSFET Q4. With Q4 turned on, the input voltage at the gate of the P-channel MOSFET Q5 is pulled high, and Q5 is turned off. Switch SW2 is closed, and the output voltage V at the drain of the P-channel MOSFET Q5 is controlled. sw2 When the input level is equal to 0, the DC voltage output by the DC voltage source V1 is input to the voltage converter U1 through the switch SW1; when the input level of the gate of the N-channel MOSFET Q3 is low level V... L When the N-channel MOSFET Q3 is turned off, the DC voltage output from the DC voltage source V1 is directly input to the gate of the P-channel MOSFET Q4 through resistor R3, pulling the input voltage of the P-channel MOSFET Q4 high, causing Q4 to turn off. Conversely, the input voltage of the P-channel MOSFET Q5 is pulled low, causing Q5 to turn on. Switch SW2 is then turned on, controlling the output voltage V at the drain of the P-channel MOSFET Q5. sw2 The DC voltage output by the DC voltage source V1 is equal to the DC voltage output by the DC voltage source V1. At this time, the DC voltage output by the DC voltage source V1 is input to the voltage converter U1 through the switch SW2.

6. A power module for automatic restart during single-event latch-up according to any one of claims 2 to 5, characterized in that, An input level greater than or equal to the gate threshold voltage of the MOSFET is a high level, and an input level less than the gate threshold voltage of the MOSFET is a low level.

7. A power module for automatic restart during single-event latch-up as described in claim 6, characterized in that, The maximum response time of the N-channel MOSFET is 40ns, and the maximum response time of the P-channel MOSFET is 100ns; the maximum response time of switch SW1 is 140ns; and the maximum response time of switch SW2 is 240ns.

8. A power restart method in the event of a single-event latch-up, characterized in that, The method is implemented based on a power supply module that automatically restarts during a single-event latch-up as described in any one of claims 1 to 7, and the method includes the following steps: Step 1, Power-on: DC voltage source V1 goes from zero to outputting DC voltage. At this time, the input level of the gate of the N-channel MOSFET of switches SW1 and SW2 is low. Switch SW1 is closed, and switch SW2 is open. The DC voltage is input to voltage converter U1 through switch SW2. Voltage converter U1 enters normal operating state and outputs voltage V normally. out To the backend chip or module, while maintaining normal output voltage V out To the gate of the N-channel MOSFET of the switches SW1 and SW2; Step 2, Switching: After the power supply is completed, the input level of the gate of the N-channel MOSFET of the switches SW1 and SW2 is high. At this time, the switch SW1 is turned on, and the DC voltage is input to the voltage converter U1 through the switch SW1. After the maximum response time of the switch SW1 is reached, the switch SW2 is turned off, and the voltage converter U1 is maintained in normal working condition. Step 3, Automatic Restart: When a single-event latch-up occurs, the output voltage V of the voltage converter U1... out When the input level equals 0, the gate input level of the N-channel MOSFETs of switches SW1 and SW2 is low. At this time, switch SW1 is closed, switch SW2 is open, and after the maximum response time of switch SW2, the DC voltage is input to the voltage converter U1 through switch SW2, controlling the voltage converter U1 to restart and continue to output voltage V normally. out To the backend chip or module, while maintaining normal output voltage V out To the gate of the N-channel MOSFET of switches SW1 and SW2.

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