SiC film preparation device and method for preparing SiC film at low vacuum degree

Abstract

The invention relates to a SiC film preparation device and a method for preparing a SiC film. The preparation device comprises a CVD reaction furnace and a precursor furnace. A heating table is arranged in the CVD reaction furnace, two quartz windows are formed on the side wall, and a laser transmitter and a pyrometer are arranged at the positions, corresponding to the two quartz windows, of the outer portion correspondingly. An air inlet in the top of the CVD reaction furnace is connected to an argon source and the precursor furnace through a nozzle and pipelines, the pipeline connected with the argon source is provided with a control valve I, and the pipeline connected with the precursor furnace is provided with a control valve II. The method for preparing the SiC film comprises the steps of 1, cleaning and preparing work before SiC film preparation, 2, adjusting work before SiC film preparation and 3, SiC film preparation and adjusting after preparation. According to the method for preparing the SiC film, the growth rate of the film is high, the requirement for the required vacuum degree is low, meanwhile, the deposition temperature is lower than that in conventional means, the manufacturing cost is low, and utilization and popularization are facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductor thin film materials, in particular to a SiC thin film preparation device and a method for preparing SiC thin films under low vacuum. Background technique [0002] SiC material has excellent corrosion resistance, heat resistance, wear resistance and high mechanical strength, its hardness is second only to diamond and C-BN material, SiC material synthesized at high temperature of 1300-1800 °C, 700 °C It can still maintain 93% of the hardness and is not oxidized. It can be used in micron sensors used in harsh environments, micro-nano mechanical MEM and NEMS) and as a protective coating to improve wear resistance and corrosion resistance. SiC has the advantages of wide band gap, high critical breakdown field strength, high thermal conductivity, high saturated electron drift velocity and high bonding energy, etc. It is also a raw material for semiconductor devices such as high temperature, high ...

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Problems solved by technology

[0006] At present, SiC mostly adopts chemical vapor deposition (CVD) technology. When SiC is prepared by traditional thermal CVD, the equipment needs to be heated to about 1200-1400 °C, which consumes a lot of energy, and the utilization rate of the gas precursor and the growth rate of the film are very low; Hot-wire CVD uses a heating wire to heat the substrate, which solves the problem of high energy consumption in thermal CVD, but it is easy to form a large temperature gradient on the substrate, and it is impossible to prepare larger-sized samples; atmospheric pressure CVD can obtain a higher growth rate, However, the utilization rate of the precursor is low and the preparation process requires a higher deposition temperature; the low-pressure CVD method can improve the quality of thin film materials, but the growth rate is low, usually lower than 1 micron per hour, which is not suitable for industrial production

At the same time, in actual production, if the SiC film is produced in large quantities under the condition of high vacuum, the cost of vacuuming is relatively high.

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