3results about How to "Control growth" patented technology

The subject invention provides devices and methods for alleviating discomfort associated with neuroma formation. The devices and methods of the invention effectively use the body's natural response of reconstructing implanted biomaterials to minimize the size of, isolate, and protect a neuroma. In preferred embodiments, the subject device is a cylindrical cap, wherein the internal chamber of the cylindrical cap physically partitions the nerve to enable an arrangement of nerve fibers (as opposed to haphazardly arranged nerve fibers often produced in neuromas). Tabs arranged on the outside of the cap can be used to manipulate the cap into place on a nerve. The open end can also be configured with flaps that can be used to widen the open end for easier insertion of the nerve into the cap. In addition, the cap's material remodels into a tissue cushion after implantation, which protects the neuroma from being stimulated and inducing pain.

The present application aims to provide a kind of norepinephrine bitartrate injection capable of effectively controlling norepinephrine sulfonate and product color and its preparation method, the present application is by norepinephrine bitartrate as active ingredient and edetate disodium, L-cysteine, sodium chloride, hydrochloric acid and water as excipients, and its preparation method, a kind of norepinephrine bitartrate injection specifically includes the following ingredients: 20g norepinephrine bitartrate, 80g sodium chloride, 2.5-3.0g edetate disodium, 4.0-5.0g L-cysteine per 10000ml, the scheme of the present application can effectively control norepinephrine sulfonate impurity and other oxidative impurities and product color.

The invention discloses a high-transmissivity amorphous zinc nitride film and a preparation method thereof, and relates to the technical field of semiconductor film materials.The preparation method comprises the following steps that firstly, a quartz substrate is selected as a substrate, metal zinc is selected as a sputtering target material, the distance between the substrate and the target material is adjusted, and a vacuum cavity cover is covered; vacuumizing, heating the substrate, introducing nitrogen and argon into a vacuum cavity, and pre-sputtering the metal zinc in a radio frequency magnetron sputtering mode without opening a target baffle; opening a target baffle, performing radio frequency magnetron sputtering on the pre-sputtered metal zinc, and depositing a zinc nitride film on the substrate; and finally, carrying out cooling treatment to obtain the amorphous zinc nitride film. According to the high-transmissivity amorphous zinc nitride film and the preparation method thereof, key parameters such as sputtering air pressure are controlled within a specific range, the growth kinetics of the film is effectively regulated and controlled, and the average transmissivity of the prepared amorphous zinc nitride film in a visible-near infrared light region is as high as 73%-86.6%.