The invention belongs to the technical field of
semiconductor material preparation, and particularly relates to a
system and a method for reducing the
oxygen content of a Czochralski
single crystal, after material melting, most gas in a
single crystal furnace is distributed into a gas collecting cavity through a gas inlet part, the gas in the gas collecting cavity can be exhausted through a gas exhaust part, and the
oxygen content of the Czochralski
single crystal is reduced through a
quartz gas exhaust
system. The flow-out speed of gas in the single
crystal furnace can be effectively controlled, so that the volatilization rate of Oi is controlled, the exhaust capacity of a
vacuum pump is improved, more volatile O elements can be taken away, the O elements are prevented from flowing into the
front edge of a
solid-
liquid interface, finally, the O content is reduced, the
oxygen content in a
single crystal silicon rod is stably controlled to be lower than 5 ppma, and the
oxygen content of the
single crystal silicon rod is reduced while the O content is controlled. When the gas collection cavity collects gas,
radiant heat absorbed by the surface of the upper half part of the heat insulation
assembly and heat brought by fluid flowing can be taken away through gas flowing, a more excellent temperature field is provided, and therefore
nucleation and growth of defects in a
crystal bar are controlled.