InGaN/AlGaN-GaN based multiple-quantum well structure and preparation method thereof

A technology of quantum well and quantum well layer is applied in the field of InGaN/AlGaN-GaN-based multi-quantum well structure and its preparation, which can solve the problems of low recombination probability and low luminous efficiency, so as to increase the recombination probability, improve luminous efficiency, The effect of improving injection efficiency and radiation recombination efficiency

Active Publication Date: 2014-12-10
TAIYUAN UNIV OF TECH
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Problems solved by technology

[0003] The technical problem to be solved by the present invention is that the recombination probabi

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  • InGaN/AlGaN-GaN based multiple-quantum well structure and preparation method thereof
  • InGaN/AlGaN-GaN based multiple-quantum well structure and preparation method thereof

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[0031] Example 1

[0032] This embodiment provides an LED structure, which is structured as figure 1 As shown, along the growth direction are sapphire substrate, low-temperature GaN nucleation layer 1, high-temperature undoped u-GaN layer 2, Si-doped n-GaN layer 3, and the InGaN / AlGaN-GaN-based multi-quantum Well structure 4, p-AlGaN electron blocking layer 5 and Mg-doped p-GaN layer 6.

[0033] Wherein, the structure of the InGaN / AlGaN-GaN-based multiple quantum well is as figure 2 As shown, along the growth direction, they are: the first AlGaN-GaN barrier layer, the InGaN quantum well layer with fixed In composition, the second AlGaN-GaN barrier layer, the InGaN quantum well layer with fixed In composition, and the third AlGaN- GaN barrier layer, InGaN quantum well layer with fixed In composition, fourth AlGaN-GaN barrier layer, InGaN quantum well layer with fixed In composition, fifth AlGaN-GaN barrier layer, InGaN quantum well layer with fixed In composition, The sixth GaN b...

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Abstract

The invention relates to an InGaN/AlGaN-GaN based multiple-quantum well structure and a preparation method thereof. In the preparation method, InGaN for fixing the In component is taken as a well layer, different AlGaN-GaN are used as barrier layers including an AlGaN barrier layer for fixing the Al component, an AlGaN barrier layer with the Al component continuously reduced along a growth direction, and a GaN barrier layer. The InGaN/AlGaN-GaN based multiple-quantum well structure is capable of effectively relieving stress at the barrier and well interface, reducing bending of energy bands, controlling electron and hole radiative recombination regions and improving electron and hole injection efficiency and radiative recombination efficiency, thereby facilitating achievement of GaN based LED structures with good crystal quality, high internal quantum efficiency and high luminous efficiency.

Description

technical field [0001] The invention relates to an InGaN / AlGaN-GaN-based multi-quantum well structure and a preparation method thereof, belonging to the technical field of semiconductors. Background technique [0002] GaN-based light-emitting diodes (LEDs) can directly convert electrical energy into light energy, and the photoelectric conversion efficiency far exceeds that of traditional incandescent and fluorescent lamps. It can emit the entire wavelength band from ultraviolet to visible light, so it has a wide range of applications in indicator lights, backlights, displays, household and commercial lighting and other fields. However, in the epitaxially grown GaN-based LED structure, due to the bipolar input of carriers, electrons and holes are respectively concentrated in the quantum wells near the N-type doped region and the P-type doped region, causing the carrier In the uneven distribution between quantum wells, the overlap integral of the wave function of electrons an...

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Application Information

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IPC IPC(8): H01L33/06H01L33/26H01L33/00
CPCH01L33/0066H01L33/0075H01L33/06H01L33/325
Inventor 贾伟李天保翟光美党随虎许并社
Owner TAIYUAN UNIV OF TECH
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