Growth method for improving quality of AlN thin film crystal

A growth method and technology for thin film crystals, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems affecting the performance of AlGaN-based ultraviolet electrical devices, high thermal mismatch and lattice mismatch, easy to generate dislocations and crystals. In order to achieve the effect of promoting step flow growth, improving crystal quality, and increasing nucleation size

Active Publication Date: 2016-05-04
NANTONG TONGFANG SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in the above two-step preparation, the AlN epitaxial growth mainly manifests as a three-dimensional island-like pattern, with a rough surface, and islands merge easily to generate dislocations and grain boundaries, resulting in a high di

Method used

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  • Growth method for improving quality of AlN thin film crystal
  • Growth method for improving quality of AlN thin film crystal
  • Growth method for improving quality of AlN thin film crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The AlN film is grown according to the following steps, and the AlN film is grown at a high temperature and fed with trimethylgallium:

[0036] 1) Set the reaction chamber pressure to 150mbar, the reaction chamber temperature to 1100°C, and bake the sapphire substrate in a hydrogen atmosphere for 10 minutes.

[0037] 2) Lower the temperature to 950°C and pre-pass trimethylaluminum for 10s.

[0038] 3) Reduce the pressure of the reaction chamber to 100 mbar, and raise the temperature to 1000° C. to grow an AlN buffer layer with a growth thickness of 20 nm and a V / III ratio of 1000.

[0039] 4) Reduce the pressure of the reaction chamber to 50 mbar, stop feeding trimethylaluminum, continue feeding ammonia gas, raise the temperature to 1150° C. in 400 seconds, and stabilize for 60 seconds.

[0040] 5) Simultaneously feed trimethylaluminum, trimethylgallium and ammonia gas, the flow rates of trimethylaluminum and trimethylgallium are 25 and 300 sccm respectively, and the f...

Embodiment 2

[0043] The AlN film is grown according to the following steps, and the AlN film is grown at a high temperature and fed with trimethylgallium:

[0044] 1) Set the reaction chamber pressure to 150mbar, the reaction chamber temperature to 1100°C, and bake the sapphire substrate in a hydrogen atmosphere for 10 minutes.

[0045] 2) Lower the temperature to 950°C and pre-pass trimethylaluminum for 10s.

[0046] 3) Reduce the pressure of the reaction chamber to 100 mbar, and raise the temperature to 1000° C. to grow an AlN buffer layer with a growth thickness of 20 nm and a V / III ratio of 1000.

[0047] 4) Reduce the pressure of the reaction chamber to 50 mbar, stop feeding trimethylaluminum, continue feeding ammonia gas, raise the temperature to 1150° C. in 400 seconds, and stabilize for 60 seconds.

[0048] 5) Simultaneously feed trimethylaluminum, trimethylgallium and ammonia gas, the flow rates of trimethylaluminum and trimethylgallium are 2.5 and 300 sccm respectively, and the ...

Embodiment 3

[0050] The AlN film is grown according to the following steps, and the AlN film is grown at a high temperature and fed with trimethylgallium:

[0051]1) Set the reaction chamber pressure to 150mbar, the reaction chamber temperature to 1100°C, and bake the sapphire substrate in a hydrogen atmosphere for 10 minutes.

[0052] 2) Lower the temperature to 950°C and pre-pass trimethylaluminum for 10s.

[0053] 3) Reduce the pressure of the reaction chamber to 100 mbar, and raise the temperature to 1000° C. to grow an AlN buffer layer with a growth thickness of 20 nm and a V / III ratio of 1000.

[0054] 4) Reduce the pressure of the reaction chamber to 50 mbar, stop feeding trimethylaluminum, continue feeding ammonia gas, raise the temperature to 1150° C. in 400 seconds, and stabilize for 60 seconds.

[0055] 5) Simultaneously feed trimethylaluminum, trimethylgallium and ammonia gas, the flow rates of trimethylaluminum and trimethylgallium are 12.5 and 300 sccm respectively, and the ...

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Abstract

The invention provides a growth method for improving the quality of an AlN thin film crystal and relates to the technical field of metalorganic chemical vapor deposition (MOCVD) growth of III-group nitrides. An AlN thin film grows through a two-step method includes the following steps that firstly, a roasting substrate is cleaned; secondly, trimethylaluminum is nitridized or introduced in advance; thirdly, an AlN buffering layer grows at low temperature; fourthly, heating and annealing are conducted; fifthly, the AlN thin film grows at high temperature, and trimethyl gallium needs to be introduced as a surfactant at least in one of the third step and the fifth step. Compared with the prior art, the AlN thin film prepared through the method has the advantages of being small in dislocation density and good in surface smoothness.

Description

technical field [0001] The invention relates to the technical field of metal organic chemical vapor deposition (MOCVD) growth of Group III nitrides, in particular to a growth method for improving the crystal quality of AlN thin films. Background technique [0002] Deep ultraviolet DUV light-emitting devices and detectors based on high-quality high-Al composition AlGaN epitaxial thin films can be widely used in fields such as disinfection and sterilization, water and food treatment, biochemical detection, information storage, radar detection and secure communication. Market potential and application The prospects are huge. The AlN substrate and template with high crystal quality are the core basis for the preparation of the above-mentioned high-performance deep ultraviolet light emitting and detecting devices. [0003] At present, high-quality AlN single crystal substrates are expensive and difficult to prepare. Therefore, in the prior art, international researchers choose ...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B25/18C23C16/34C23C16/02
CPCC23C16/0209C23C16/34C30B25/183C30B25/186C30B29/403
Inventor 吴真龙曾颀尧郑建钦田宇李鹏飞
Owner NANTONG TONGFANG SEMICON
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