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Method for measuring membrane temperature in metal organic chemical vapor deposition (MOCVD) equipment in real time and measuring device

A technology of chemical vapor deposition and metal-organic substances, which is applied in measuring devices, optical radiation measurement, radiation pyrometry, etc., can solve the problem that the change error of the stereoscopic acceptance angle of the receiving detector cannot be eliminated.

Active Publication Date: 2012-05-16
甘志银
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of the prior art, by monitoring the black body radiation light of two different wavelengths, simplifying the step of calibrating the surface emissivity of the film in the ordinary single-wavelength optical temperature measurement technology, and overcoming the current optical temperature measurement The technology cannot eliminate the shortcomings of the error caused by the change of the stereo receiving angle of the receiving detector and the change of the distance between the detector and the measured object.

Method used

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  • Method for measuring membrane temperature in metal organic chemical vapor deposition (MOCVD) equipment in real time and measuring device
  • Method for measuring membrane temperature in metal organic chemical vapor deposition (MOCVD) equipment in real time and measuring device
  • Method for measuring membrane temperature in metal organic chemical vapor deposition (MOCVD) equipment in real time and measuring device

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Experimental program
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Effect test

Embodiment 1

[0020] The basic principle of the non-contact optical temperature measurement method is Planck's distribution law, which reveals the distribution law of the wavelength of black body radiation energy at different black body temperatures, and its mathematical expression is as follows:

[0021] E ( λ , T ) = C 1 λ - 5 ϵ ( λ ) e C 2 / ( λT ) - 1 - - - ...

Embodiment 2

[0051] Embodiment 2 is the same as Embodiment 1, except that the device in this embodiment is composed of a data acquisition system 11 , an optical detector 12 , a grating 30 , and a data analysis and display system 25 . The epitaxial thin film 18 emits a spectrum, first passes through the spray hole 17, then passes through the test window 15 on the cavity 20 and enters the optical detector 12 by the spectroscopic grating 30. At this time, the wavelength split by the spectroscopic grating 30 is set to lambda 1 , through the data acquisition system 11 to detect and record the epitaxial film 18 at λ 1 Radiant power P at wavelength 1 , and then split another wavelength through the splitting grating 30 and set it as λ 2 , the data acquisition system 11 detects and records the epitaxial film 18 at λ 2 The radiation power under P 2 , and finally perform data processing and analysis in the data analysis and display system 25 to obtain the surface temperature. see figure 2 , th...

Embodiment 3

[0060] Embodiment 3 is the same as Embodiment 1, except that in this embodiment, a subsystem temperature measuring device composed of the data acquisition system 11, optical detector 12, filters 13, 14 and rotating spindle 21 in Embodiment 1 twenty three. see image 3 . The temperature measuring device 23 can slide freely on the guide rail 24, and can measure the radial surface temperature of the film disc by sliding over different spray holes.

[0061] The process of real-time temperature measurement with the above device is:

[0062] 1) MOCVD equipment starts to perform epitaxial growth. The device of the present invention is in the working state of temperature measurement.

[0063] 2) The temperature measuring device 23 is located at a temperature measuring point, and the temperature at this measuring point is obtained by performing the steps of Embodiment 1 or Embodiment 2 to measure.

[0064] 3) The temperature measuring device 23 goes to other temperature measuring ...

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Abstract

The invention discloses a method for measuring a membrane temperature in metal organic chemical vapor deposition (MOCVD) equipment in real time and a measuring device. The method comprises the following steps of: monitoring radiant light of heat radiation of an epitaxial wafer through a spray hole in a vapor phase deposition technical process; and performing filtering separation on the radiant light to detect two or more types of membrane radiant light energy of different wavelengths. The measuring device disclosed by the invention comprises a light splitting mechanism, an optical detector and a data acquisition system. According to the method and the measuring device, a step for firstly measuring the surface emissivity of a membrane by adopting a single-wavelength optical temperature measuring technology in the conventional online measurement is omitted, an error caused by the change of the three-dimensional receiving angle of a receiving detector and the change of the distance between the detector and a measured object is eliminated, and the serviceable range and the measuring accuracy of an MOCVD online temperature measuring device are increased greatly. Due to the adoption of the method disclosed by the invention to processing, more accurate membrane temperatures are obtained.

Description

technical field [0001] The invention relates to an optical detection device, in particular to a method and a measuring device for real-time measuring the temperature of a thin film in a metal organic compound chemical vapor deposition device. Background technique [0002] With the rapid development of LED technology, metal oxide chemical vapor deposition equipment (MOCVD) production equipment is becoming more and more important. The development of this equipment not only determines the quality and performance of LEDs, but also largely determines the yield and cost of LED manufacturing. Real-time accurate measurement of relevant parameters of the MOCVD growth process is a prerequisite for any effort to improve the MOCVD process and LED chips. Therefore, the development of higher precision in-situ monitoring technology is a key goal of MOCVD system manufacturers. [0003] The temperature of epitaxial film is the most important factor affecting the quality of MOCVD epitaxial ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/52
Inventor 甘志银
Owner 甘志银
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