35results about How to "Overcome preparation difficulties" patented technology

The invention discloses a method for preparing a hydrogenation catalyst composite, comprising the following steps of: (1) preparing a NixWyOz composite oxide precursor by using a coprecipitation method; (2) pulping, mixing and filtering the NixWyOz composite oxide precursor and MoO3; and (3) forming and activating the NixWyOz composite oxide precursor and the MoO3 to form a final catalyst, wherein the process of manufacturing the NixWyOz composite oxide precursor comprises the steps of: preparing acid solution A containing an active metal Ni component according to a component content proportion of the catalyst; preparing solution B containing an active metal W component according to the component content proportion of the catalyst; merging the solution A and the solution B, and adding the mixture of the solution A and the solution B into a reaction tank to gelatinize; and generating a deposited mixture to obtain the precursor containing the composite oxide NixWyOz. The catalyst prepared by the method has the advantages of uniform dispersion of metals, high use performance, and particularly higher activity for deep impurity removal process of hydrocarbon. The method is simple and convenient, and has low metal loss. The method is mainly used for preparing a bulk phase catalyst with higher metal content.

The invention discloses a method for preparing Naratriptan [N-methyl-3- (1-methyl-4-piperidine)-1,4-indole-5-ethyl thiamine], employing 5-halogenated indole as start raw material, through cyanation, reduction, condensation with N-methyl methanesulfonamide, hydrogenation for reduction, condensation with N-methyprylone, and again hydrogenation for reduction to get the target compound. The invention is characterized by the designation of the synthetic Naratriptan course of easy-to-get raw amterial and low operating cost, overcoming the shortcomings of hard preparation of raw material and high operating cost in current technology.

The invention relates to a method for preparing a p-type ZnO nano-wire, belonging to the semiconductor doping technical field. The invention relates to a doping technology for the p-type ZnO nano-wire, in particular to a doping technology by adoption of the chemical vapor deposition technology and utilization of arsenide as a p-type dopant of ZnO. The doping technology is characterized in that: the doping technology adopts the arsenide as a doping source of the p-type ZnO and utilizes the chemical vapor deposition technology to prepare the arsenic doped p-type ZnO nano-wire. Under the condition that the heating temperature is between 400 and 700 DEG C, the proportion of arsenic doped into the ZnO is controlled by adjusting the mol ratio of the arsenide and zinc, so as to perform growth of the p-type ZnO. The doping technology has the advantages that: the doping technology provides a simple and effective growth technology for preparing the p-tyype ZnO nano-wire with high quality and strong controllability, overcomes the defect of difficult doping of the p-type ZnO nano-wire, and further realizes a p-n junction photoelectric device of the ZnO nano-wire.

The invention provides an efficient measurement element, device and method for integrated gear errors, and belongs to the field of the precision testing technology and instrument and the mechanical transmission technology. The combined standard element is composed of two measurement half-gears in a combined mode, wherein the two measurement half-gears are installed coaxially, can rotate independently and are respectively provided with a circular grating, and the independent angle position of each measurement half-gear can be measured; meanwhile, the device and method using the element for conducting specific gear measurement are provided. According to the efficient measurement element, device and method, the defect that one-side tooth surface measurement can be completed only after a measured gear rotates by two or more circles during integrated gear error measurement at present is overcome, one-side tooth surface measurement can be completed only after the measured gear rotates by one circle, and in the measurement process, under the condition that the measured gear rotates at the same speed, measurement time can be shortened by more than one time after the measurement method is adopted.

The invention provides an optical voltage transformer based on an SF6 coaxial capacitance voltage divider. The optical voltage transformer comprises a high voltage shell, an insulation casing and a base. The high voltage shell and the insulation casing are connected to a whole body. Both the high voltage shell and the insulation casing are filled with SF6 gas. The base is fixedly connected to the insulation casing, and the base and the insulation casing are separated by a baffle plate. The base is provided with a grounding terminal. The invention relates to the optical voltage transformer based on the SF6 coaxial capacitance voltage divider. By using the SF6 coaxial capacitor formed by a primary conduction rod and an annular metal electrode as a high voltage side voltage divider capacitor, the problem of difficult manufacture of a current optical voltage transformer high voltage capacitor. The transformer has the advantages of small size, light weight and high accuracy, and the overall error is less than 0.1%.

Disclosed herein is an electromagnetic induction sensor that is used with a position indicator and includes coils for electromagnetic coupling with the position indicator. The electromagnetic induction sensor includes: a sensor board main body that includes an insulating substrate and a surface sheet attached to a side of a first surface of the insulating substrate, on which side a position is indicated by the position indicator; at least part of conductors forming the coils being formed on a second surface of the insulating substrate opposite from the first surface; and an overlay member that includes a magnetic powder material layer and is adhered to the side of the second surface of the sensor board main body.

The invention relates to a method for preparing a microsphere cavity laser based on ultra-strong up-conversion multi-component glass material, and belongs to the technical field of microsphere cavitylasers. The method comprises the preparation of Yb-Er ion co-doped multi-component fluorosilicate glass and Yb-Er ion co-doped glass microspheres. And the prepared microspheres are packaged by a laser. The Preparation method of microsphere cavity laser based on ultra-strong up-conversion multi-component glass material combines the ultra-high up-conversion quantum efficiency of Yb-Er ions in the fluorosilicate glass with the high quality factor of the glass microspheres, and solves the problems of uncontrollable crystallization in the development process of the prior-conversion optical fiber laser and the over-high pumping threshold value. According to the invention, the pumping light intensity is greatly enhanced through optical path coupling, resonance of the whispering wall mode is realized in Yb-Er co-doped fluorine silicate microspheres, and finally laser output with narrow line width is realized. The method is simple in preparation process, belongs to the wave band with the smallest transmission loss in seawater, can be used for naval equipment, and solves the problem of detection of underwater targets and marine communication.

The invention belongs to the technical field of heavy metal ion adsorption separation and relates to an application and preparation method of a hexavalent chromium ion imprinted composite membrane with alpha-methacrylic acid serving as a functional monomer. The method includes that by adoption of hexavalent chromium ions as template ions, alpha-methacrylic acid as the functional monomer, glycol dimethyl acrylate as a cross-linking agent, azodiisobutyronitrile as an initiator and a pore forming solvent formed by mixed solution of an organic solvent and water in a volume ratio of 1:1, the hexavalent chromium ion imprinted composite membrane is prepared according to a surface grafting method. By combination of the ion imprinting technique and the membrane separation technique, complex operations such as grinding or screening are avoided, specific recognition sites can be protected, high stability, high environmental adaptability and availability for extreme solution environments are realized, and application to adsorption separation of hexavalent chromium ions in solution containing Cr (VI) is realized.

The invention discloses a preparation method of a 1550 nm waveband single photon source, the single photon source and an optical device. The preparation method comprises the following steps: preparinga silicon oxide layer on a SiC wafer (0001) surface; carrying out ion implantation; bonding with another SiC substrate with a silicon oxide dielectric layer along the surface of the silicon oxide; carrying out annealing stripping, and transferring the SiC film to the SiC substrate; preparing a mask on the SiC film, and removing the mask pattern to expose a part of the SiC film; performing V ion implantation, and removing the mask region; preparing a C film, and activating a V ion doping method step; and transferring the SiC film to a substrate through ion implantation, and preparing a 1550 nmcommunication band single photon source. According to the invention, the problems that a 1550 nm light source of an existing photonics platform is difficult to prepare and a single photon source andan optical device are difficult to integrate are effectively solved, a 1550 nm communication light source with high uniformity and high quality is obtained on a SiC platform, and the single photon source and the device are integrated on the same platform.

Belonging to the technical field of membrane separation, the invention discloses a preparation method and application of a trivalent chromium ion imprinted composite membrane. The ion imprinted composite membrane provided by the invention is economical, practical, and simple in process, and can be used for selective adsorption and separation of trivalent chromium ions in water. The specific methodincludes: taking a commercially available membrane as the support membrane, adopting trivalent chromium ion as the template ion, using 2-vinyl pyridine as the functional monomer, combining ion imprinting technology with membrane separation technology, employing thermal initiation for thermal polymerization of the functional monomer and template ion on the surface of support membrane, and then performing elution to remove the template ion, thus obtaining the trivalent chromium ion imprinted composite membrane. The imprinted composite membrane has imprinted holes matching the shape, size and dimension of trivalent chromium ion on the surface, can specifically identify trivalent chromium ions in the target solution, and can effectively adsorb trivalent chromium ions in the solution.

The invention discloses an ultra-low-threshold multi-component holmium ion doped glass material. The molar composition of the glass material is expressed as 72TeO2-20ZnO-5Na2CO3-2Y2O3 according to a chemical formula, and Ho<3+> ions with the concentration of 1 mol% are doped. The invention further provides a preparation method and a control method of a microsphere cavity laser based on the ultra-low-threshold multi-component holmium ion doped glass material. The microsphere cavity prepared by the method is perfect in surface and has an extremely high Q value, the manufactured laser is extremely low in threshold, the coupling efficiency is greatly improved, the problems of low output power and low collection energy efficiency of an echo wall mode micro-cavity laser are effectively solved, and a high-efficiency and low-threshold narrow-bandwidth optical fiber mid-infrared optical fiber micro-cavity laser can be realized.

The invention discloses a method for synthesizing C11 perfluoro-ketone. The method is characterized by taking a hexafluoropropylene oxide (HFPO) dimer and perfluoro-n-propyl vinyl ether (PPVE) as starting materials, taking potassium fluoride or cesium fluoride as a catalyst under suitable reaction conditions and obtaining C11 perfluoro-ketone through one-step reaction under the condition of catalysis. The method for synthesizing C11 perfluoro-ketone has the beneficial effects that by utilizing the method, the product yield is more than 80%; the raw materials are easy to prepare, the reaction yield is increased, and the method is easy to operate, is easy in purification, can be used for carrying out large scale production and has high social and economic values; researches find that the final product is obtained through one-step reaction by using the HFPO dimer and PPVE as starting reactants; the reaction temperature is lower, the reaction speed is high and the reaction yield is higher, so that large scale production of the compound is easy to achieve.

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor manufacturing method comprises the following steps of: providing a first substrate; forming a firstwell region on a surface of the first substrate; forming a second well region in the first well region; Providing a second substrate having the same conductivity type as the first substrate; Forming athird well region on the surface of the second substrate; Bonding a surface of the first substrate that does not form a well and a surface of the second substrate that does not form a well. The device formed by the method can realize high-voltage reverse voltage withstand, and the manufacturing process is compatible with the traditional IGBT manufacturing process, the process is simple, the implementability is strong, and the problems of the prior art such as difficulty in manufacturing the high-voltage reverse resistance IGBT, high cost and the like are overcome.