Method for preparing Zn-doped p-type beta-Ga2O3 nanowire according to chemical vapor deposition method

A chemical vapor deposition, -ga2o3 technology, applied in chemical instruments and methods, inorganic chemistry, nanotechnology, etc., can solve the problems of difficult doping of nanomaterials, and achieve the effects of overcoming preparation difficulties, easy operation, and simple equipment

Inactive Publication Date: 2015-12-30
徐州永丰磁业有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But due to the p-type β-Ga 2 o 3 Nanomaterials are difficult to dope, and nanomaterials are greatly affected by growth conditions. Therefore, so far, there has been no use of CVD methods to grow Zn-doped p-type β-Ga with gallium and zinc sources. 2 o 3 Related literature reports on nanowires

Method used

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  • Method for preparing Zn-doped p-type beta-Ga2O3 nanowire according to chemical vapor deposition method
  • Method for preparing Zn-doped p-type beta-Ga2O3 nanowire according to chemical vapor deposition method
  • Method for preparing Zn-doped p-type beta-Ga2O3 nanowire according to chemical vapor deposition method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Proceed as follows:

[0023] a. first evaporate a layer of metal catalyst with a thickness of 20nm on the cleaned substrate, and the metal catalyst is gold;

[0024] b. The gallium source and the zinc source are fully mixed to make the reaction source material according to the mass ratio of 10:1, the gallium source is elemental gallium with a purity of 99%; the zinc source is a mixed powder of zinc oxide powder and carbon powder, The mass ratio of zinc oxide powder to carbon powder is 7:1;

[0025] c. Put the reaction source material and the substrate evaporated with the metal catalyst into the quartz boat, and then put the quartz boat into the high-temperature heating zone in the growth chamber of the chemical vapor deposition system. The substrate is located 1cm away from the reaction source material downstream of the gas flow , feed high-purity argon as the carrier gas, and the flow rate of argon is 200ml / min; when the heating temperature reaches 00°C, feed oxygen, ...

Embodiment 2

[0029] Proceed as follows:

[0030] a. Evaporating a layer of metal catalyst with a thickness of 20nm on the cleaned substrate, the metal catalyst being gold;

[0031] b. The gallium source and the zinc source are fully mixed to make the reaction source material at a mass ratio of 7:1, the gallium source is elemental gallium with a purity of 99%; the zinc source is a mixed powder of zinc oxide powder and carbon powder, The mass ratio of zinc oxide powder to carbon powder is 7:1;

[0032] c. Put the reaction source material and the substrate evaporated with the metal catalyst into the quartz boat, and then put the quartz boat into the high-temperature heating zone in the growth chamber of the chemical vapor deposition system. The substrate is located 1cm away from the reaction source material downstream of the gas flow , feed high-purity argon as the carrier gas, and the flow rate of argon gas is 200ml / min; when the heating temperature reaches 900°C, feed oxygen, the flow rate...

Embodiment 3

[0036] Proceed as follows:

[0037] a. Evaporating a layer of metal catalyst with a thickness of 20nm on the cleaned substrate, the metal catalyst being gold;

[0038] b. The gallium source and the zinc source are fully mixed in a mass ratio of 5:1 to make the reaction source material, the gallium source is elemental gallium with a purity of 99%; the zinc source is a mixed powder of zinc oxide powder and carbon powder, The mass ratio of zinc oxide powder to carbon powder is 7:1;

[0039] c. Put the reaction source material and the substrate evaporated with the metal catalyst into the quartz boat, and then put the quartz boat into the high-temperature heating zone in the growth chamber of the chemical vapor deposition system. The substrate is located 1cm away from the reaction source material downstream of the gas flow , feed high-purity argon as the carrier gas, and the flow rate of argon gas is 200ml / min; when the heating temperature reaches 900°C, feed oxygen, the flow rate...

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Abstract

The invention discloses a method for preparing a Zn-doped p-type beta-Ga2O3 nanowire according to a chemical vapor deposition method. The method provided by the invention comprises the following steps: carrying out evaporation to form a metal catalyst layer which is 1-50 nm thick on a cleaned substrate; sufficiently mixing a Ga source and a Zn source according to a certain mass ratio to prepare a reaction source material; putting the reaction source material and the substrate on which the metal catalyst layer is formed through evaporation into a quartz boat, and then putting the quartz boat into a high-temperature heating zone in a chemical vapor deposition system growth chamber, wherein the substrate is positioned in the downstream direction of gas flows and 1-2 cm away from the reaction source material, injected high-purity argon gas is carrier gas, and the argon gas flux is 50-500 ml / min; when the heating temperature reaches 600-1100 DEG C, injecting oxygen and keeping the oxygen flux of 1-5 ml / min for 15-30 minutes; stopping the oxygen injection, keeping the argon gas flux, cooling to 100 DEG C and below, and taking out an obtained sample.

Description

technical field [0001] The invention relates to a Zn-doped p-type β-Ga 2 o 3 A method for preparing nanowires, especially a method for preparing Zn-doped p-type β-Ga by chemical vapor deposition (CVD) 2 o 3 nanowire method. Background technique [0002] β-Ga 2 o 3 It is a wide bandgap semiconductor material with a bandgap of 4.9eV, which is the oxide transparent material with the largest bandgap known so far. Due to its excellent electrical, optical, conductive and thermal stability properties, it has broad application prospects in many fields such as optoelectronic devices, ultraviolet detectors and gas sensors. But due to intrinsic β-Ga 2 o 3 It is an n-type semiconductor material, in order to realize β-Ga 2 o 3 Application of nanomaterials in optoelectronic devices, p-type β-Ga 2 o 3 The preparation of nanomaterials is essential. Chemical Vapor Deposition (CVD) [0003] The method has the advantages of simple equipment, easy operation, and low production cos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00B82Y40/00
Inventor 冯秋菊刘佳媛杨毓琪梅艺赢潘德柱李梦轲
Owner 徐州永丰磁业有限公司
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