Acceptor activation method for nitrogen adulterated ZnO

A nitrogen doping and acceptor technology, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve the effect of overcoming the difficulty of preparation

Inactive Publication Date: 2010-02-17
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention overcomes the disadvantage that high-quality nitrogen-doped p-type ZnO is difficult to obtain at present, and provides a kind of annealing technology assisted by radio frequency plasma, which performs high-temperature annealing of nitrogen-doped ZnO in a nitrogen oxide plasma environment, Thus obtaining a high-quality p-type ZnO doping method

Method used

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  • Acceptor activation method for nitrogen adulterated ZnO

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (1) The prepared nitrogen-doped ZnO thin film, the concentration of nitrogen is 1×10 19 cm -3 Place on sample tray.

[0022] (2) When the vacuum degree of the reaction chamber reaches below 10Pa, the turbomolecular pump in the reaction chamber can be started. The vacuum degree of the reaction chamber reaches 3×10 -3 At Pa, stop the molecular pump and prepare for annealing.

[0023] (3) Pass NO 2 , when the vacuum degree is 10Pa ~ 80Pa, turn on the radio frequency plasma power supply, set the power to 100 ~ 450W, and start the plasma ignition discharge.

[0024] (4) Heating the substrate sheet tray to a temperature of 500-800° C., and heat-treating the substrate sheet for 10-60 minutes.

[0025] (5) After the annealing is completed, when the temperature is slowly lowered to below 400°C, turn off the radio frequency power supply, close the gas valve, and continue to slowly cool down to room temperature before taking out the sample.

[0026] The resistivity of the pr...

Embodiment 2

[0029] The steps of this process method and example 1 are substantially the same, and the difference is that the oxide of nitrogen used is NO.

Embodiment 3

[0031] This processing method is identical with the step of embodiment 1, and the difference is that the oxide of nitrogen that adopts is N 2 O.

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Abstract

The invention provides an activation method for a nitrogen-doped ZnO acceptor, belonging to the semiconductor material field and particularly taking the radio frequency plasma metal-organic chemical vapor deposition (MOCVD) technique as the late-annealing technique of the nitrogen-doped ZnO. The invention aims to overcome the defect that the nitrogen-doped p type ZnO is hard to acquire and provides a method that by utilizing the radio frequency plasma annealing technique, the nitrogen-doped ZnO undergoes the high temperature annealing in the nitrogen oxide plasma, thereby obtaining the highlyefficient and stable p type ZnO doping; because nitrogen and oxygen which are high in activity are formed in the atmosphere, the escape of the nitrogen in the nitrogen-doped ZnO can be prevented, andsimultaneously the desorption of the oxygen in the ZnO can also be prevented, and simultaneously the nitrogen acceptor in the nitrogen-doped ZnO is activated, thereby realizing the preparation of thep type ZnO and further realizing the preparation of an pn junction LED device of the ZnO.

Description

technical field [0001] The invention relates to a p-type ZnO doping technology and a method for nitrogen-doping a p-type ZnO thin film, which belongs to the technical field of semiconductor materials, and in particular to a method for using a radio frequency plasma process as a late-stage annealing of nitrogen-doped ZnO to activate N acceptors. Background technique [0002] ZnO is another new type of wide bandgap semiconductor material after GaN, which has higher exciton binding energy than GaN material, and can achieve efficient exciton-related emission at room temperature or even higher temperature. However, in order to realize the application in optoelectronic devices, the p-type doping of ZnO has always been a research hotspot. Because there are many intrinsic defects in ZnO, such as Zn gaps, 0 vacancies, etc., making undoped ZnO an n-type semiconductor material, and these defects have a strong self-compensation effect, so it is difficult to produce efficient and stable ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/477
Inventor 梁红伟孙景昌杜国同赵涧泽边继明胡礼中
Owner DALIAN UNIV OF TECH
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