28results about "Single device manufacturing" patented technology

A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a "Z" axis magnetic field onto sensors orientated in the XY plane.

To provide a magnetoresistive element, a magnetic memory, and a magnetic sensor that are resistant to the influence of external forces such as heat and external magnetic fields and have high magnetization stability.SOLUTION: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer, and an underlayer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is located between the underlayer and the non-magnetic layer. The underlayer contains Ta. The first ferromagnetic layer is expressed as CoαFeβXγPtδ, where X is boron or carbon, and α+β+γ+δ=1, α≥β>0, and δ≤0.3 are satisfied. The easy axis of magnetization of the first ferromagnetic layer is a first in-plane direction perpendicular to a stacking direction, and the anisotropy field of the first ferromagnetic layer in a second direction is 50 Oe or more. The second direction is perpendicular to the stacking direction and the first direction.SELECTED DRAWING: Figure 1

A magnetic sensor includes at least one bridge circuit and a plurality of magnetoresistive elements. The at least one bridge circuit includes a first resistor section, a second resistor section, and a third resistor section. Each of the plurality of magnetoresistive elements includes a magnetization pinned layer having a magnetization whose direction is fixed. The plurality of magnetoresistive elements includes first, second, and third magnetoresistive elements constituting first, second, and third resistor sections, respectively. The direction of the magnetization of the magnetization pinned layer of the first magnetoresistive element, the direction of the magnetization of the magnetization pinned layer of the second magnetoresistive element, the direction of the magnetization of the magnetization pinned layer of the third magnetoresistive element intersect with one another at angles other than 0 degrees and 180 degrees.

Structure for a Hall sensor, wherein the structure comprises: a semiconductor body comprising a first surface and a side wall (16, 66) chamfered towards the first surface, defining a Hall surface (35) that intersects the first surface; a first well (22) in the semiconductor body, wherein the first well (22) comprises a first section (30) and a second section (26), wherein the first section (30) is positioned partly below the first surface and partly below the Hall surface (35), and the second section (26) is positioned below the first surface of the semiconductor body and extends along the beveled side wall (16, 66); a second well (24) in the semiconductor body, wherein the second well (24) comprises a first section (32) which is arranged laterally partially between the second section (26) of the first well (22) and the Hall surface (35), wherein the first well (22) has a first conductivity type, and the second well (24) has a second conductivity type of a polarity opposite to the first conductivity type; and a plurality of contacts in the semiconductor body, wherein the plurality of contacts comprise a first contact (38) and a second contact (40) coupled to the first section (30) of the first well (22) below the first surface of the semiconductor body.

In a general aspect, a vapor cell includes a body defined by a stack of layers bonded to each other. The stack of layers includes a first end layer disposed at a first end of the body and a second end layer disposed at a second, opposite end of the body. Intermediate layers extend between the first and second end layers and define an internal cavity extending through the body between the first end layer and the second end layer. Each intermediate layer includes a through-hole that defines a portion of the internal cavity through the intermediate layer. The vapor cell also includes a vapor or a source of the vapor disposed in the internal cavity.

This invention relates to a Hall plate employing a two-dimensional CaN electron gas film, its preparation method, and its applications. The Hall plate comprises, from bottom to top, a substrate, a nucleation layer, a buffer layer, an insertion layer, and a barrier layer, forming a multilayer film. The cross-section of the multilayer film is rectangular, with four mesa symmetrically arranged on both sides. Four ohmic metals are disposed above the barrier layer. PAD metals are applied over the mesa and ohmic metals, and a SiO2 passivation layer is disposed above the ohmic metals and PAD metals. The high electron mobility of the Hall plate of this invention significantly improves magnetic field sensitivity, supports stable operation above 200°C, and has a higher frequency response capability (GHz level), making it suitable for high-speed detection scenarios.

A manufacturing system of a ferromagnetic sensing material is used to process a raw material into the ferromagnetic sensing material. The manufacturing system of the ferromagnetic sensing material includes a rotating device, a working cavity, a carrying element, an array magnet module, a spin wave excitation device, a baffle module, a measuring device, and a control unit. The rotating device includes a rotating shaft. The carrying element is disposed in an internal space of the working cavity to carry the raw material. The array magnet module is used to provide a fixed magnetic field. The spin wave excitation device is used to provide a high-frequency magnetic field spin wave. The baffle module is used to change an electromagnetic wave distribution in the working cavity. The measuring device is used to measure the ferromagnetic sensing material. The control unit obtains a magnetization result of the ferromagnetic sensing material according to a reflected beam. The rotating device drives the carrying element and the array magnet module to rotate.

The invention relates to a method for manufacturing a Wheatstone bridge comprising the following steps: a step of supplying a first slice comprising: a first stack of layers including: a first magnetic layer, the first stack of layers being structured into a first half-Wheatstone bridge in which the magnetization of the first magnetic layer is oriented in a first direction; a step of supplying a second slice comprising: a second stack of layers, including: a third magnetic layer; a first step of structuring the second stack of layers into a second half-Wheatstone bridge in which the magnetization of the third magnetic layer is oriented in a second direction; a bonding step, in which the bonding step is carried out such that the first direction is different from the second direction. Figure for the abstract: Fig. 7

Cross type high temperature three-dimensional Hall sensor and preparation method thereof belong to the technical field of semiconductor devices. The technical scheme is that X column, Y column and Z column are all third generation semiconductor materials, X column, Y column and Z column are connected with each other perpendicularly in pairs, electrodes C1 and C2 are arranged at two ends of Z column, electrodes C3 and C4 are arranged on two sides of Y column, and electrodes C5 and C6 are arranged on two sides of X column. The beneficial effects are that the third generation semiconductor is used to make the sensor work in a high temperature environment, the new structure greatly reduces the volume compared with the traditional discrete device packaging combined Hall sensor, the sensor can work in a very small space, the performance of the new structure in each direction is consistent, which is beneficial to high temperature work and subsequent signal processing, and the high sensitivity Hall sensor made by the scheme is expected to be applied in various micro wearable, nuclear power station, medical, military, aerospace and other fields.

A magnetic sensor device includes at least one magnetic sensor and a support. A center of gravity of an element layout area of the at least one magnetic sensor is deviated from a center of gravity of a reference plane of the support. The at least one magnetic sensor includes four auxiliary resistor sections constituted by a plurality of magnetoresistive elements. The element layout area includes first to fourth areas for laying out the four auxiliary resistor sections, respectively. Two of the first to fourth areas are arranged so that at least parts of the respective two areas sandwich a reference axis therebetween, and other two of the first to fourth areas are arranged so that at least parts of the respective other two areas sandwich the reference axis therebetween.

A method for producing a magnetic sensor. The method includes: arranging a first material having a first etch rate on a substrate to form a first layer; arranging a second material having a second etch rate on the first layer to form a second layer, the first etch rate being smaller than the second; arranging a third material on the second layer to form a third layer; structuring the third layer to create a structure having at least one open window in the third layer; etching, isotropically, the second layer through the at least one open window, as a result of which the third layer is undercut; after the through-etching of the second layer, the first layer is etched to create at least one inclined surface in the etched first layer, forming a magnetic sensing element on the at least one inclined surface of the first layer.

A light detection element includes: a plurality of magnetic elements, wherein each of the magnetic elements includes a first ferromagnetic layer that is irradiated with light and a second ferromagnetic layer and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and wherein at least two of the magnetic elements are arranged to be inside a spot of the light applied to the first ferromagnetic layers of the at least two of the magnetic elements.

A magnetic sensor device includes a first detection circuit, a second detection circuit, and a processor. The processor is configured to execute a first generation process of generating a first initial detection value, a second generation process of generating a second initial detection value, a first correction process, a second correction process, and a determination process. The first correction process is a process of correcting and updating the first initial detection value. The second correction process is a process of correcting and updating the second initial detection value. The processor executes the determination process after alternately executing the first correction process and the second correction process.

The present disclosure provides tunnel magnetoresistive (TMR) multi-turn (MT) sensors with improved sensor read-out and methods of manufacturing said sensors. In some examples, the TMR sensing elements of the MT sensor are each provided with two or more electrical contacts for performing current-in-plane tunnelling measurements. The two or more electrical contacts may be provided above or below the TMR sensing elements. In further examples, one or more read-out pillars formed from TMR sensing material may be provided, the read-out pillars being electrically connected to one or more TMR sensing elements. The read-out pillars are configured such that the resistance observed in the read-out pillars is negligible or near-negligible relative to that observed in the TMR sensing elements, such that the measured output signal only reflects the change in resistance experience by the TMR sensing elements in the presence of an externally rotating magnetic field. In the arrangements described herein, the length of the TMR sensing elements can be significantly reduced and tighter sensor spiral can be achieved, thus reducing the overall size and defectivity of the MT sensor.

A magnetic sensor comprises at least one bridge circuit and a plurality of magnetoresistive elements. The at least one bridge circuit comprises a first resistance section, a second resistance section, and a third resistance section. Each of the magnetoresistive elements comprises a magnetization-fixed layer with a magnetization whose direction is defined. The plurality of magnetoresistive elements comprises first, second, and third magnetoresistive elements, each forming first, second, and third resistance sections, respectively. The magnetization directions of the magnetization-fixed layer of the first magnetoresistive element, the magnetization directions of the magnetization-fixed layer of the second magnetoresistive element, and the magnetization directions of the magnetization-fixed layer of the third magnetoresistive element intersect at angles other than 0 degrees and 180 degrees.

A magnetic sensor includes an insulating layer, a first MR element, and a second MR element. The insulating layer includes a first layer and a second layer, and has first and second inclined surfaces formed through the first and second layers. The first and second MR elements each include a magnetization fixed layer and a free layer. The magnetization fixed layer and the free layer of the first MR element are disposed on the first inclined surface. The magnetization fixed layer and the free layer of the second MR element are disposed on the second inclined surface.

Disclosed are example systems, methods, and structures for improving magnetic field sensor performance. In particular, described are example systems, methods, and structures for improving magnetic field sensor performance in applications where magnetic field sensing elements detect a deflection of a magnetic field generated by a magnet. Systems, methods, and structures disclosed herein may provide a sensor device that includes magnetic field sensing elements and a plurality of magnet structures embedded in a semiconductor die. In some embodiments, the plurality of magnet structures may be configured to generate a magnetic field corresponding to a layout of the magnetic field sensing elements in the semiconductor die.

A magnetic sensor according to the present application includes a substrate having a reference plane, a support member disposed on the substrate and having at least one inclined surface inclined with respect to the reference plane, at least one magnetic detection element disposed on the at least one inclined surface, and an insulating portion composed of an insulating material disposed on a portion of the at least one magnetic detection element.

The present application provides a Z-axis magnetic field sensor and a processing method therefor, which relates to the technical field of magnetic field measurement. The sensor comprises a substrate, a magnetic flux conversion module, a magnetic induction module, and an output module; a soft magnetic metal material having a high magnetic permeability that forms the magnetic flux conversion module is located in a groove formed by etching in the substrate or located above the substrate, and the magnetic flux conversion module comprises a first magnetic flux conversion unit and a second magnetic flux conversion unit; the first magnetic flux conversion unit and the second magnetic flux conversion unit comprise soft magnetic metal materials spaced apart from each other, which concentrate and amplify a magnetic field to be measured in the Z-axis direction, and then convert the magnetic field direction, thus generating an X-axis magnetic field component. The magnetic induction module senses the magnetic field of the magnetic flux conversion module and generates a differential voltage signal, and by means of the output module, an output signal of the magnetic field to be measured is formed. The Z-axis magnetic field sensor and processing method provided in the present application have the characteristics of high magnetic field conversion efficiency, a uniform magnetic field distribution, high sensitivity, good stability, low noise, and availability single-chip and small-size manufacturing.

A multi-axis magnetic field sensor and a multi-axis magnetic field sensor chip. The multi-axis magnetic field sensor comprises: a first magnetizer (2z1), which is arranged on a first substrate (1a); a second magnetizer (2z3), which is arranged on a passivation layer (1c) or a second substrate (1b); a first air gap, which is formed on the basis of the first magnetizer (2z1) and the second magnetizer (2z3); a third magnetizer (2x1), which has a second air gap and is arranged on the substrate (1a or 1b) or the passivation layer (1c); a fourth magnetizer (2y1), which has a third air gap and is arranged on the substrate (1a or 1b) or the passivation layer (1c); and at least three magnetic induction units (at least one of 2x2a and 2x2c, at least one of 2y2a and 2y2b, and at least one of 2z2a, 2z2b, 2x2c, and 2z2d), which are respectively located in corresponding air gap regions, wherein the magnetic induction units in the passivation layer (1c) have the same magnetic induction sensitivity direction. Magnetic induction units in the same passivation layer of the multi-axis magnetic field sensor have the same magnetic induction sensitivity direction, such that the single-chip manufacturing of the multi-axis magnetic field sensor can be realized, and the manufactured multi-axis magnetic field sensor achieves better stability and higher precision.

An on-chip electrical coil includes a semiconductor substrate; a plurality of metal layers disposed on the semiconductor substrate; a plurality of insulator layers disposed on the semiconductor substrate, each insulator layer disposed between a pair of neighboring metal layers to form an alternating arrangement of metal layers and insulator layers; a plurality of metal vias defined in the insulator layers, each metal via electrically connecting a respective pair of neighboring metal layers; and a planar spiral formed by the metal layers and the metal vias, the planar spiral including a plurality of interconnected loops, each loop including two metal wires disposed in respective metal layers, an intra-loop column that electrically connects the two metal wires of a respective loop, and an inter-loop column that electrically connects one of the metal wires of the respective loop to one of the metal wires in a subsequent loop.

Comprehensive structure: a multitude of Hall effect sampling blocks (20, 30, 40, 50), each of which comprises a multitude of contacts (22a-c, 32a-c, 42a-c, 52a-c); a first switching element connected to a first set of scanning blocks of the plurality of scanning blocks (20, 30, 40, 50); and a second switching element connected to a second set of scanning blocks of the plurality of scanning blocks (20, 30, 40, 50), wherein the scanning blocks (20, 40) of the first set of scanning blocks and the scanning blocks (30, 50) of the second set of scanning blocks are arranged in alternating order, and wherein the first switching element is connected by a wiring (56) to the respective contacts (22a-c, 42a-c) in each of the scanning blocks (20, 240) of the first set of scanning blocks and the second switching element is connected by a wiring (56) to the respective contacts (32a-c, 52a-c) in each of the scanning blocks (30, 50) of the second set of scanning blocks.

A process for manufacturing a Wheatstone bridge, includes the following steps: a step of providing a first wafer including: a first stack of layers including: a first magnetic layer, the first stack of layers being structured into a first Wheatstone device wherein the magnetization of the first magnetic layer is oriented in a first direction, a step of providing a second wafer includes: a second stack of layers including: a third magnetic layer, a first step of structuring the second stack of layers into a second Wheatstone device wherein the magnetization of the third magnetic layer is oriented in a second direction, a bonding step, wherein the bonding step is carried out in such a way that the first direction is different from the second direction.