263results about "Single device manufacturing" patented technology

Methods and apparatus for a magnetic field sensor having a first set of MR elements configured to change in resistance due to an applied magnetic field having an orientation in a sensitive axis of the first set of MR elements and a second set of MR elements that are immune to the applied magnetic field. The second set of MR elements is configured to change in resistance due to temperature. A processor can compensate for the response of the first set of MR elements based on the temperature information from the second set of MR elements.

The present disclosure provides a method for optimizing a broadband noise of an inductive magnetic field sensor as well as a magnetic field sensor, including: determining a functional relationship between an induced voltage of a coil and an effective permeability of a magnetic core of the inductive magnetic field sensor; determining an equivalent voltage noise expression of a temperature variation-induced permeability noise of the magnetic core according to the functional relationship; determining a key influencing factor of the magnetic core according to the equivalent voltage noise expression of the temperature variation-induced permeability noise of the magnetic core; modifying the magnetic core according to the key influencing factor of the magnetic core to optimize the temperature variation-induced permeability noise of the magnetic core; and constructing a dual-channel composite multi-stage modulation signal-noise separation circuit to optimize a low-frequency band noise and a high-frequency band noise of the inductive magnetic field sensor.

Method for forming a magnetoresistive element by forming a sense layer having a free sense magnetization, a reference layer having a fixed reference magnetization, wherein the reference layer is formed by deposition in a Krypton atmosphere, a tunnel barrier layer between the reference layer and the sense layer, and a hard layer having a fixed reference magnetization layer opposite to that of the reference layer. The magnetoresistive element may be configured to measure an external magnetic field oriented substantially perpendicular to the plane of the reference layer. The reference magnetizations of the reference and hard layers may be oriented substantially perpendicularly to the plane of the reference and hard layers. The sense magnetization may have a vortex configuration in the absence of an external magnetic field.

In a general aspect, antirelaxation coatings are disclosed for coating the interior surfaces of vapor cells. In certain aspects, a vapor cell includes a dielectric body having interior and exterior surfaces. The interior surface defines a cavity in the dielectric body, and the exterior surface defines an opening to the cavity. The vapor cell also includes an antirelaxation coating that is disposed on the interior surface of the dielectric body and includes an organosilane material. The vapor cell additionally includes a vapor or a source of vapor residing in the cavity as well as an optical window that covers the opening to the cavity. The optical window has a surface bonded to the exterior surface of the dielectric body to form a seal around the opening. The vapor or the source of vapor includes alkali metal atoms.

In one aspect, a method of manufacturing a magnetoresistance (MR) element having layers include ramping up a temperature of a reference layer of the MR element to an annealing temperature of the reference layer by increasing an amplitude of laser pulses applied to the reference layer over time to an amplitude that corresponds to the annealing temperature of the reference layer; applying a magnetic field to the reference layer; and maintaining the amplitude of subsequent laser pulses over time that have the amplitude that corresponds to the annealing temperature of the reference layer until at least the reference layer is annealed.

A layered structure includes a silicon-based substrate comprising a substrate surface; a titanium-copper seed layer arranged on the substrate surface, wherein the titanium-copper seed layer comprises a titanium layer and a copper layer, wherein the titanium layer is arranged on the substrate surface such that covalent bonds are formed between the titanium layer and silicon of the silicon-based substrate, and wherein the copper layer is arranged directly on the titanium layer, such that the titanium layer is arranged between the substrate surface and the copper layer; and a nickel-iron plating layer arranged directly on the copper layer of the titanium-copper seed layer such that the titanium-copper seed layer is arranged between the silicon-based substrate and the nickel-iron plating layer.

A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a "Z" axis magnetic field onto sensors orientated in the XY plane.

[Problem] To electrically connect a lead layer and a protective film reliably even when the film thickness of a protective film that covers a functional film is extremely thin. [Solution] After the conductive protective film 51 is formed on the surface of the functional film 20, reverse sputtering is performed while a portion of the surface of the protective film 51 is covered with a mask 60, thereby physically restoring a natural oxide film 52 formed on the surface of the protective film 51 not covered by the mask 60. Thereafter, a lead layer 40 is formed on the surface of the protective film 51 not covered by the mask 60. Consequently, since the natural oxide film 52 formed on the surface of the protective film 51 can be removed without performing etching, the lead layer 40 and the protective film 51 can be connected electrically without damaging the functional layer 20 even when the film thickness of the protective film 51 is extremely thin.

A sensor package is proposed, including a tunneling magnetoresistance (TMR) sensor chip and a buffer layer having a modulus of elasticity of less than 1 GPa at a temperature of 20° C. The buffer layer is fitted on and / or under the TMR sensor chip.

In a general aspect, methods for manufacturing vapor cells are disclosed. In certain aspects, a method of manufacturing a vapor cell includes obtaining a dielectric body that has interior and exterior surfaces. The interior surface defines a cavity in the dielectric body, and the exterior surface defines an opening to the cavity. The method includes forming an antirelaxation coating on the interior surface of the dielectric body. The antirelaxation coating comprising an organosilane material. The method additionally includes disposing a vapor or a source of vapor in the cavity and obtaining an optical window that comprises a surface. The vapor or the source of vapor includes alkali metal atoms. The method also includes bonding the surface of the optical window to the exterior surface of the dielectric body to form a seal around the opening to the cavity.

A device having a spin valve layer sequence, wherein the spin valve layer sequence includes a first magnetic layer having a variable direction of magnetization, a second magnetic layer having a fixed direction of magnetization, and a stabilization layer for stabilizing the fixed direction of magnetization of the second magnetic layer, wherein the stabilization layer includes a precious metal-free antiferromagnet.

To provide a magnetic sensor applied to a magnetic field detection device that can accurately detect a magnetic field in a predetermined direction while being compact.SOLUTION: A magnetic sensor comprises a stacked structure in which a first layer including a magnetic yoke, and a second layer including a magnetic field detection element and a plurality of magnetic field generators each applying a magnetic field to the magnetic field detection element and arranged discretely along a first axis direction, are stacked in order in a second axis direction intersecting the first axis direction. The magnetic field detection element is interposed between two magnetic field generators selected from the plurality of magnetic field generators in the first axis direction. The magnetic yoke extends in the first axis direction, and is adjacent to the magnetic field detection element in a third axis direction intersecting both the first axis direction and the second axis direction in a plan view. Magnetization directions of the plurality of magnetic field generators are each inclined at less than 45° with respect to the first axis direction.SELECTED DRAWING: Figure 1B

The invention provides a high-temperature superconducting weak magnetic detection device and system, and the device comprises a Dewar which is internally provided with a refrigerant; the reading circuit module comprises a reading circuit board and a shielding shell; an annular cavity is formed in the shielding shell, and the reading circuit board is arranged in the shielding shell; the embedded structure is inserted into the Dewar, an installation position of an SQUID chip is arranged on the embedded structure, and a lead channel is arranged on the side wall of the embedded structure; and the heat insulation structure is fixed and filled in the upper end opening of the embedded structure. According to the high-temperature superconducting weak magnetic detection device and system, connectors and fasteners do not need to be disassembled and assembled frequently in the refrigerant filling process, and operation is convenient; electrostatic point discharge is not easy to generate, and the electrostatic damage rate of the high-temperature SQUID is reduced; the high-temperature SQUID does not need to be exposed in the air in the refrigerant filling process, performance degradation of the SQUID is avoided, and the service life and the performance stability of the SQUID are further ensured; the fault rate of the system is reduced in practical application, and the reliability and stability of the system are improved.

Electric components including coils and methods to fabricate the same by 3D-printing are disclosed. The method includes: 3D printing a magnetic material to form a magnetic channel comprising a magnetic core of the coil device; 3D printing a conductive material to form a conductive channel, including conductive windings of the coil device with turns surrounding the magnetic core; and 3D printing a non-magnetic electrically insulating material to form electrical insulation between the turns of the conductive windings of the coil device. In some embodiments functional structures of the electric component, including the turns of the conductive windings of the coil and the electrical insulation between the turns, are each printed with minimal in-layer feature size of at least two voxels of the 3D-printing. Some embodiments facilitate 3D-printing of flattened coil devices having low aspect ratio between their lengths along their magnetic axes and their widths perpendicular thereto.

To reliably electrically connect the lead layer and protective film that covers a functional film even when the film thickness of the protective film is very small. After formation of a conductive protective film 51 on the surface of a functional film 20, reverse sputtering is performed with a part of the surface of the protective film 51 covered with a mask 60 to physically reduce a native oxide film 52 formed on a part of the surface of the protective film 51 that is not covered with the mask 60. Thereafter, a lead layer 40 is formed on a part of the surface of the protective film 51 that is not covered with the mask 60. This can remove the native oxide film 52 formed on the protective film 51 without requiring etching. Thus, even when the film thickness of the protective film 51 is very thin, it is possible to electrically connect the lead layer 40 and protective film 51 without damaging the functional film 20.

A soft magnetic sensor comprising a soft material containing randomly distributed magnetic microparticles and a magnetometer that can estimate force and localize contact over a continuous area. A reference magnetometer can be used to filter motion and ambient noise. Methods for locating contact and determining force comprise data analysis of the magnetometer output. In some embodiments, the sensor can localize an object prior to contact.

A magnetic sensor includes a substrate having a reference plane, a support member having an inclined surface, and a magnetoresistive element disposed on the inclined surface. The magnetoresistive element has a bottom surface, a top surface, and a first side surface and a second side surface connecting the bottom surface and the top surface. The first side surface is, as compared to the second side surface, located in front in a first direction that is along the inclined surface and that gets close to the reference plane. At least a part of the first side surface is, as compared to a first virtual plane, located close to the second side surface, and the first virtual plane intersects with a first corner present at a position at where the top surface and the first side surface intersect and is perpendicular to the reference plane.

The invention provides a magnetoelectric sensor for in-plane vector magnetic field measurement and a manufacturing method, and the magnetoelectric sensor comprises a first magnetoelectric composite arm which is used for outputting a voltage signal corresponding to a magnetic field component in a first direction; the second magnetoelectric composite arm is used for outputting a voltage signal corresponding to a magnetic field component in a second direction, and the first direction is perpendicular to the second direction; the piezoelectric layer assembly comprises first piezoelectric layers symmetrically arranged on the two sides of the midpoint position of the first magnetoelectric composite arm and second piezoelectric layers symmetrically arranged on the two sides of the midpoint position of the second magnetoelectric composite arm; when the magnetoelectric sensor is located in an alternating current magnetic field, the first magnetoelectric composite arm and the second magnetoelectric composite arm coincide in the midpoint positions in the respective length directions and are fixedly connected, and the first magnetoelectric composite arm and the second magnetoelectric composite arm are the same in material composition, stacking structure and geometric dimension. The problems of single-axis measurement, channel inconsistency and difficulty in realizing high-precision in-plane vector measurement in the prior art are solved.

A magnetic sensor includes a sensor housing, a magnet, a printed circuit board assembly, a first sensor element, and a second sensor element. The sensor housing includes a pocket and a magnet opening. The magnet is disposed in the magnet opening. The printed circuit board assembly is disposed in the pocket. The printed circuit board assembly includes a first portion and a second portion. The first sensor element and the second sensor element are disposed on the second portion. The first sensor element and second sensor element are configured to measure magnetic flux density, and the magnetic flux generated by the magnet is configured to pass through the first sensor element in a first direction and pass through the second sensor element in a second direction that is opposite to the first direction.

A magnetic sensor (70) is disclosed. The magnetic sensor can include a sensing element (10) and a magnetic shield (72). The sensing element and the magnetic shield can be vertically stacked with respect to each other. The magnetic shield can be a magnetic shield plate that includes ferromagnetic portions laterally separated by a non-ferromagnetic material. The sensing element can have a first side and a second side opposite the first side. The magnetic shield can be vertically stacked on the first side of the sensing element. The magnetic shield can be separated from the sensing element by an isolation layer (76). A passivation layer (78) can cover at least a portion of the sensing element or the magnetic shield. The sensing element can be configured to sense a magnetic field property of a magnetic field source located on the second side of the sensing element.

A magnetic sensor comprises a substrate with a reference plane, a support element with an inclined surface, and a magnetoresistive element positioned on the inclined surface. The magnetoresistive element has a bottom surface, a top surface, a first side surface, and a second side surface connecting the bottom and top surfaces. The first side surface is positioned forward of the second side surface in a first direction that runs along the inclined surface and approaches the reference plane. At least a portion of the first side surface is positioned near the second side surface relative to a first virtual plane, and the first virtual plane intersects with a first corner located at the point where the top surface and the first side surface intersect and which is perpendicular to the reference plane.

The present invention relates to a magnetic sensor. The object of the present invention is to improve the sensitivity of a magnetic sensor utilizing the magnetoimpedance effect. The solution of the present invention is a magnetic sensor characterized by comprising: a non-magnetic substrate; a sensing element provided on the substrate, the sensing element containing a soft magnetic body and having a long side direction and a short side direction, the sensing element having a uniaxial magnetic anisotropy in a direction intersecting the long side direction and sensing a magnetic field through the magnetoimpedance effect; and a protruding portion protruding from an end portion of the long side direction of the sensing element, the protruding portion containing a soft magnetic body.

The present invention relates to a current sensor system comprising a conductor and a packaged integrated circuit for sensing a current in the conductor, said conductor being external to the packaged integrated circuit. The packaged integrated circuit comprises : - a substrate (2) having an active surface (3) and a back surface (4), - one or more magnetic sensing elements (7) disposed in or on the active surface of the substrate, - a processing circuit disposed in or on the active surface of the substrate and arranged to process signals received from the one or more magnetic sensing elements to derive an output signal indicative of a sensed current in the conductor, - a housing (1), - a plurality of leads (8) having an outer lead portion extending outside the housing and an inner lead portion, - electrical connections (6) between the leads and the active surface of the substrate, wherein the back surface of the substrate is disposed on a support (5) formed by at least two inner lead portions of said plurality of leads and the active side of the substrate is oriented towards the outer ends of the outer lead portions of the leads in a direction perpendicular to a plane defined by the support.

To provide a magnetoresistive element, a magnetic memory, and a magnetic sensor that are resistant to the influence of external forces such as heat and external magnetic fields and have high magnetization stability.SOLUTION: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer, and an underlayer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is located between the underlayer and the non-magnetic layer. The underlayer contains Ta. The first ferromagnetic layer is expressed as CoαFeβXγPtδ, where X is boron or carbon, and α+β+γ+δ=1, α≥β>0, and δ≤0.3 are satisfied. The easy axis of magnetization of the first ferromagnetic layer is a first in-plane direction perpendicular to a stacking direction, and the anisotropy field of the first ferromagnetic layer in a second direction is 50 Oe or more. The second direction is perpendicular to the stacking direction and the first direction.SELECTED DRAWING: Figure 1

A Hall sensor includes a Hall well, such as an implanted region in a surface layer of a semiconductor structure, and four doped regions spaced apart from one another in the implanted region. The implanted region and the doped regions include majority carriers of the same conductivity type. The sensor also includes a dielectric layer that extends over the implanted region, and an electrode layer over the dielectric layer to operate as a control gate to set or adjust the sensor performance. A first supply circuit provides a first bias signal to a first pair of the terminals, and a second supply circuit provides a second bias signal to the electrode layer.

The present invention relates to a magnetic sensor. The object of the present invention is to improve the sensitivity of a magnetic sensor utilizing the magnetoimpedance effect. The solution of the present invention is that a magnetic sensor (1) is provided with a non-magnetic substrate (10), and a sensing element (30) provided on the substrate (10), the sensing element (30) comprising a soft magnetic layer (101) of an amorphous alloy with Co as the main component, having a saturation magnetization of 300 emu / cc or more and 650 emu / cc or less, and the sensing element (30) having a long side direction and a short side direction, having uniaxial magnetic anisotropy in a direction intersecting the long side direction, and sensing a magnetic field by the magnetoimpedance effect.

The apparatus for magnetizing the magnetized fixed layer and heating the antiferromagnetic layer is simplified. [Solution] A laminated film 601 is formed having a ferromagnetic layer 631 and an antiferromagnetic layer 66, with the ferromagnetic layer 631 and the antiferromagnetic layer 66 in contact with each other in a first direction Z (Step S1). Next, a magnetic field in the first direction Z is applied to the laminated film 601 to create a magnetization-fixed layer 63 from the ferromagnetic layer 631, in which the magnetization direction is fixed with respect to the external magnetic field (Step S2). After stopping the application of the magnetic field, the laminated film 601 is heated to a temperature above the blocking temperature of the antiferromagnetic layer 66 to create a magnetic laminate 6 (Step S3).

In a general aspect, gettering elements are disclosed for absorbing gas species from a cavity of a vapor cell. In certain aspects, a vapor cell includes a dielectric body having interior and exterior surfaces. The interior surface defines a cavity in the dielectric body, and the exterior surface defines an opening to the cavity. The dielectric body also includes a channel having a porous layer that is configured to absorb a gas species from the cavity. The vapor cell also includes a vapor or a source of vapor residing in the cavity as well as an optical window that covers the opening to the cavity. The optical window has a surface bonded to the exterior surface of the dielectric body to form a bonded interface of the vapor cell. The bonded interface includes a seal around the opening, and the vapor or the source of vapor includes alkali metal atoms.

A sensor device includes a current conductor designed to carry an electric current, a differential magnetic field sensor chip arranged in an opening of the current conductor and designed to detect a magnetic field generated by the electric current, and a metal plate arranged over the current conductor and over the magnetic field sensor chip.