729results about "Single device manufacturing" patented technology

Magnetoresistive element comprising a reference layer having a fixed reference magnetization; a ferromagnetic sense layer having a free sense magnetization having a stable vortex configuration that is orientable relative to the fixed reference magnetization in the presence of an external magnetic field; and a tunnel barrier layer between the reference layer and the sense layer and contacting a first side of the sense layer. The magnetoresistive element further comprises a hard magnetic layer arranged on a second side (212) of the sense layer opposed to the first side, the hard magnetic layer being configured to generate an interfacial magnetic coupling between the hard magnetic layer and the sense layer on the second side, such as to prevent chirality switching of the sense magnetization after the magnetoresistive element has been submitted to a heat treatment and an external magnetic field above vortex expulsion field.

The invention relates to a magnetic field sensor based on a room-temperature two-dimensional magnetic semiconductor material and a preparation method and application thereof, and the preparation method comprises the steps: arranging two electrodes which are not communicated with each other on an insulating substrate, obtaining a layered iron gallium tellurium material, transferring the layered iron gallium tellurium material to the insulating substrate, enabling at least one layered iron gallium tellurium material to be separated from the insulating substrate, and enabling the layered iron gallium tellurium material to be separated from the insulating substrate. The first product covers the two electrodes at the same time, tetrabutylammonium cations or oxygen plasmas are used for carrying out an intercalation reaction on the layered iron gallium tellurium material of the first product, and the layered iron gallium tellurium material of the first product is converted into an intercalated layered iron gallium tellurium material; and performing vacuum annealing to obtain the magnetic field sensor. The sensor provided by the invention reflects the magnetic field intensity by using the polarized light current between the electrodes, and can realize wide-range and high-precision magnetic field detection.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):Co2FeαXβ  (1)(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α<β, and 0.5≤α<1.9).

An optical sensor includes a wavelength filter configured to transmit light in a specific wavelength range and a magnetic element including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The light passing through the wavelength filter is applied to the magnetic element and the light applied to the magnetic element is detected.

An electric component having electric coils, the component formed by 3D printing of at least three different 3D-printed materials with spatial distributions yielding open magnetic circuit configuration of one of the electric coils. The electric component having a bulk formed by non-magnetic and dielectric 3D printed material; and an electric coil of the open magnetic circuit configuration, 3D-printed in the bulk. A magnetic channel of magnetic material 3D-printed in the bulk forming magnetic core of the electric coil; and an electric channel forming an inductor of the electric coil having conductive material 3D-printed in the bulk with a coil / helical geometry having electrically connected conductive windings arranged to circumference the magnetic channel, which is configured and operable with the open magnetic circuit configuration and has magnetic material occupying a central region of the coil / helical geometry of the inductor while not enclosing the windings with a closed loop of the magnetic material.

Spiral inductors, magnetic field sensors incorporating the spiral inductors, and methods of using the magnetic field sensors are provided. The spiral inductors include an electrically conductive spiral coil and a nitrogen vacancy (NV) diamond substrate. A thin barrier layer of a dielectric material separates the spiral coil from the surface of the NV diamond substrate and an overlayer of dielectric material is disposed over the spiral nanocoil. The integration of the spiral coil with an NV substrate in this manner creates a highly enhanced magnetic transduction and produces a simple, high-performance way to control and read out electromagnetic signals. Because the spiral inductors enable electromagnetic-to-optical signal conversion, they can be used as sensors for environmental or biomedical applications and spin-based computation.

A magnetoresistive element for a magnetic sensor, the magnetoresistive element including a tunnel barrier layer between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization, wherein the sense magnetization includes a stable vortex configuration. The magnetoresistive element further includes a reference pinning layer in contact with the reference layer and pining the reference magnetization by exchange-bias at a first blocking temperature. The magnetoresistive element further includes a sense pinning layer in contact with the sense layer and pining the sense magnetization by exchange-bias at a second blocking temperature lower that the first blocking temperature. Additionally, a method for manufacturing the magnetoresistive element.

The invention provides a Z-axis magnetic field sensor. The Z-axis magnetic field sensor comprises a plastic packaging layer, a magnetic resistor Die, a plurality of pins and a first shielding layer. And the first shielding layer is arranged on the upper surface of the magnetoresistive Die and consists of a plurality of soft magnetic material blocks in an X-Y plane so as to shield a magnetic field in the X-Y direction on the upper surface of the magnetoresistive Die. The magnetic resistor Die is manufactured by adopting a wafer front-end process and comprises a magnetic resistor and a Z-axis magnetic field conversion part above the magnetic resistor. Each welding spot on the upper surface of the reluctance Die is directly covered by an independent soft magnetic material block in the first shielding layer to form a wiring end, and each pin is in one-to-one correspondence contact with the welding spot. The Z-axis magnetic field sensor provided by the invention is manufactured by combining a semiconductor front-end process and a special packaging process, so that the volume size is effectively reduced, an XY plane interference magnetic field is shielded more thoroughly, and the anti-interference capability is stronger.

Methods and apparatus for a magnetic field sensor having a first set of MR elements configured to change in resistance due to an applied magnetic field having an orientation in a sensitive axis of the first set of MR elements and a second set of MR elements that are immune to the applied magnetic field. The second set of MR elements is configured to change in resistance due to temperature. A processor can compensate for the response of the first set of MR elements based on the temperature information from the second set of MR elements.

A position sensor for measuring signals indicative of location and / or orientation a catheter's distal end, and a method of fabrication thereof are disclosed. The position sensor includes a flexible circuit board (FCB) and at least three surface mount coil devices (SMD coils) arranged thereon for sensing different aspects of one or more magnetic fields, which are indicative of the location and / or orientation of the catheters distal end. The FCB is furnished at the sensor in folded / rolled state such that the magnetic flux axes of at least three of the SMD coils are not co-planar to thereby enable utilizing signals measured thereby determine the at least one of the orientation and location of the sensor relative to one or more magnetic field sources.

The present disclosure concerns a magnetoresistive element comprising a reference layer having a reference magnetization oriented out-of-plane; a sense layer having a sense magnetization comprising a vortex configuration stable under the presence of an external magnetic field and reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field varies in a direction out-of-plane; and a tunnel barrier layer between the reference layer and the sense layer. The sense layer has a thickness smaller than 200 nm. The sense layer comprises a ferromagnetic material configured such that the sense magnetization is between 300 and 1400 emu / cm3 and such that the sense layer has a perpendicular magnetic anisotropy field that is greater than 1 kOe (79.6×103 A / m). The present disclosure further concerns a magnetoresistive sensor comprising a plurality of the magnetoresistive element.

The invention relates to a magnetic field sensor (1) with a microwave source (6) and a sensor board (2), wherein the sensor board (2) comprises a sensor crystal (5) with at least one magneto-optical defect, an excitation light source (3), a detector (7), and at least two permanent magnets (8). The sensor crystal (5) is arranged such that microwave radiation generated by the microwave source (6) can be absorbed by the at least one magneto-optical defect of the sensor crystal (5). The excitation light source (3) is configured to emit an excitation light beam (4) and is designed and arranged such that the excitation light beam (4) emitted by the excitation light source (3) can cause the emission of fluorescence radiation in the at least one magneto-optical defect of the sensor crystal (5). The detector (7) is designed and arranged such that it detects the emitted fluorescence radiation.The at least two permanent magnets (8) are arranged and configured to generate a homogeneous, static magnetic field in the sensor crystal (5).

In a general aspect, the vapor cell includes a body defined by a stack of layers bonded together. The stack of layers includes a first end layer disposed at a first end of the body and a second end layer disposed at an opposite second end of the body. An intermediate layer extends between the first end layer and the second end layer and defines an interior cavity extending through the body between the first end layer and the second end layer. The stack of layers also includes first and second sets of tabs. The first set of tabs extend outwardly from the intermediate layer at a first exterior portion of the body and the second set of tabs extend outwardly from the intermediate layer at a second exterior portion of the body. The vapor cell also includes a vapor or vapor source disposed in the interior cavity.

To provide a magnetic sensor device in which influence of stress applied is suppressed.SOLUTION: A magnetic sensor device 1 comprises magnetic sensors 10, 20, 30, and a support medium 4. The center of mass of an element arrangement area of the magnetic sensors 10, 20, 30 is displaced from center of mass C4 of a reference plane 4a of the support medium 4. Each of the magnetic sensors 10, 20, 30 includes four resistance parts composed of a plurality of MR elements. Magnetization of a free layer 54 in two resistance parts contains a component in a third magnetization direction. Magnetization of the free layer 54 in each of the remaining two resistance parts contains a component in a fourth magnetization direction opposite to the third magnetization direction.SELECTED DRAWING: Figure 8

Methods and apparatus for a magnetic field sensor having a first set of MR elements configured to change in resistance due to an applied magnetic field having an orientation in a sensitive axis of the first set of MR elements and a second set of MR elements that are immune to the applied magnetic field. The second set of MR elements is configured to change in resistance due to temperature. A processor can compensate for the response of the first set of MR elements based on the temperature information from the second set of MR elements.

A tunnel magnetoresistive (TMR) multi-turn (MT) sensor can include sensing elements which can be provided with two or more electrical contacts for performing current-in-plane tunnelling measurements. The two or more electrical contacts may be provided above or below the TMR sensing elements. One or more read-out pillars formed from TMR sensing material may be provided, the read-out pillars being electrically connected to one or more TMR sensing elements. The read-out pillars can be configured such that the resistance observed in the read-out pillars is negligible or near-negligible relative to that observed in the TMR sensing elements, such that the measured output signal only reflects the change in resistance experience by the TMR sensing elements in the presence of an externally rotating magnetic field.

To provide a magnetic field sensor.SOLUTION: A magnetic field sensor and a method for 3D-printing of the magnetic field sensor are provided. The magnetic field sensor includes a monolithic body having a plurality of coils 3D-printed inside by continuous printing of a layer along a printing direction. The coils include: a coil (or coils) where a magnetic axis (or axes) is oriented in a longitudinal direction parallel to the printing direction and a coil (or coils) where a magnetic axis (or axes) is oriented in a lateral direction vertical to the printing direction. On the respective coil (or coils) oriented in the lateral direction, magnetic channels bent between a pair of magnetic flux collection surfaces facing each other vertical to the magnetic axis are 3D-printed so that they include a magnetic core section extending along the printing direction. Each of the coils oriented in the longitudinal direction and the coils oriented in the lateral direction are 3D-printed by arranging each conductive winding including a plurality of turns 3D-printed on a flat surface of a 3D-printed layer. Turns of the coils oriented in the lateral direction encircle the magnetic core section up to its magnetic channels.SELECTED DRAWING: Figure 1A

The invention relates to a magnetic sensor device comprising a substrate (10) and at least one sensor structure (A) with at least one sensing element (16a), which is arranged in a first sensing area (14a) located directly on or adjacent to a substrate surface (12), and by means of which a magnetic field component present in the first sensing area (14a) can be detected along a sensing axis (18a) assigned to each sensing axis and aligned parallel to the substrate surface (12), and a first layer (20a) comprising at least one soft magnetic material, which is located between the substrate (10) and the first sensing area (14a) located directly on or adjacent to the substrate surface (12) or on a side of the first sensing area (14a) facing away from the substrate (10).wherein a first outer surface (22a) of the first layer (20a) oriented towards the first sensing area (14a) has at least one partial surface (24a) which is oriented at a local angle of inclination greater than or equal to 2° and less than or equal to 70° to the substrate surface (12).

The invention relates to an MEMS fluxgate sensor with double-layer induction coils and a manufacturing method thereof, the MEMS fluxgate sensor is composed of a group of symmetrically distributed single-layer excitation coils, a group of double-layer induction coils and a closed-loop magnetic core, and the core of the MEMS fluxgate sensor lies in design and implementation of a wafer-level double-layer induction coil structure. The manufacturing method comprises the following steps: patterning the magnetic core by femtosecond laser; manufacturing a coil silicon mold by a deep reactive ion etching process; and filling the silicon mold with metal to manufacture the coil. The manufacturing of the wafer-level double-layer induction coil is realized, and the sensitivity of the MEMS fluxgate sensor can be effectively improved under the same physical size. According to the method, the iron-based amorphous ribbon is selected as a magnetic core material, the magnetic core is patterned in a femtosecond laser cutting mode, it can be guaranteed that the size error is within the range of + / -5 microns, and the pattern asymmetry influence caused by machining errors is effectively reduced.

The present disclosure provides a method for optimizing a broadband noise of an inductive magnetic field sensor as well as a magnetic field sensor, including: determining a functional relationship between an induced voltage of a coil and an effective permeability of a magnetic core of the inductive magnetic field sensor; determining an equivalent voltage noise expression of a temperature variation-induced permeability noise of the magnetic core according to the functional relationship; determining a key influencing factor of the magnetic core according to the equivalent voltage noise expression of the temperature variation-induced permeability noise of the magnetic core; modifying the magnetic core according to the key influencing factor of the magnetic core to optimize the temperature variation-induced permeability noise of the magnetic core; and constructing a dual-channel composite multi-stage modulation signal-noise separation circuit to optimize a low-frequency band noise and a high-frequency band noise of the inductive magnetic field sensor.

A magnetoresistive element for a 2D magnetic sensor, the magnetoresistive element including a tunnel barrier layer included between a reference layer having a reference magnetization and a sense layer having a sense magnetization. The sense layer includes a sense synthetic antiferromagnetic structure including a first sense sublayer in contact with the tunnel barrier layer and separated from a second sense sublayer by a first non-magnetic spacer layer such that the first sense sublayer is antiferromagnetically coupled to the second sense sublayer. The sense layer is configured such that a sense magnetic ratio ΔM defined as:Δ⁢M=M⁢sF⁢M⁢2⁢tF⁢M⁢2-M⁢sF⁢M⁢1⁢tF⁢M⁢1M⁢sF⁢M⁢2⁢tF⁢M⁢2+M⁢sF⁢M⁢1⁢tF⁢M⁢1wherein MSFM1 and MSFM2 are the spontaneous magnetizations of the first and second sense sublayers and tFM1 and tFM2 are the thicknesses of the first and second sense sublayers; and wherein the sense magnetic ratio is between 0.1 and 0.25.

Method for forming a magnetoresistive element by forming a sense layer having a free sense magnetization, a reference layer having a fixed reference magnetization, wherein the reference layer is formed by deposition in a Krypton atmosphere, a tunnel barrier layer between the reference layer and the sense layer, and a hard layer having a fixed reference magnetization layer opposite to that of the reference layer. The magnetoresistive element may be configured to measure an external magnetic field oriented substantially perpendicular to the plane of the reference layer. The reference magnetizations of the reference and hard layers may be oriented substantially perpendicularly to the plane of the reference and hard layers. The sense magnetization may have a vortex configuration in the absence of an external magnetic field.

In a general aspect, antirelaxation coatings are disclosed for coating the interior surfaces of vapor cells. In certain aspects, a vapor cell includes a dielectric body having interior and exterior surfaces. The interior surface defines a cavity in the dielectric body, and the exterior surface defines an opening to the cavity. The vapor cell also includes an antirelaxation coating that is disposed on the interior surface of the dielectric body and includes an organosilane material. The vapor cell additionally includes a vapor or a source of vapor residing in the cavity as well as an optical window that covers the opening to the cavity. The optical window has a surface bonded to the exterior surface of the dielectric body to form a seal around the opening. The vapor or the source of vapor includes alkali metal atoms.

A magnetic sensor device includes a first detection circuit, a second detection circuit, and a processor. The processor is configured to execute first generation processing for generating a first initial detection value, second generation processing for generating a second initial detection value, first correction processing, second correction processing, and determination processing. The first correction processing is processing for correcting the first initial detection value and updating the first initial detection value. The second correction processing is processing for correcting the second initial detection value and updating the second initial detection value. The processor executes the determination processing after alternately executing the first correction processing and the second correction processing.

The invention discloses a magnetic field sensor, an operation method, a preparation method and an electronic device. The magnetic field sensor comprises a piezoelectric layer, a Bragg reflection layer and an interdigital electrode pair which are stacked, wherein the piezoelectric layer comprises a first surface and a second surface opposite to the first surface; the Bragg reflection layer is arranged on the first surface of the piezoelectric layer and configured to reflect acoustic waves, and the Bragg reflection layer comprises a plurality of first acoustic impedance layers and second acoustic impedance layers which are alternately stacked and arranged in pairs; the first acoustic impedance layer comprises a magnetostrictive material layer, and the acoustic impedance value of the second acoustic impedance layer is different from that of the first acoustic impedance layer; the pair of interdigital electrodes is disposed on the second surface of the piezoelectric layer, and is configured to feed in an electrical signal, generate an electric field in the piezoelectric layer to excite an acoustic wave, and measure an input return loss of the magnetic field sensor. The magnetic field sensor is low in process complexity, high in mechanical quality factor and high in detection sensitivity.

The present invention discloses a method for manufacturing an optical fiber magnetic field sensor composed of Terfenol-D powder and FPI. The method comprises the following steps: a first step of manufacturing a Fabry-Perot interferometer 1 (FPI1); a second step of uniformly coating the Terfenol-D powder on the surface of a large capillary of the FPI1 to form the FPI1 that is sensitive to a magnetic field; a third step of manufacturing a Fabry-Perot interferometer 2 (FPI2); and a fourth step of fusing the single-mode optical fiber ends of the FPI1 and the FPI2 together using a fusion splicer, with the two FPIs spaced 5 mm to 1 cm apart. The two FPIs are cascaded to form a first harmonic vernier effect sensor. The method of the present invention absorbs the advantages of existing sensors and overcomes their disadvantages. By utilizing a quartz capillary, a single-mode optical fiber, Terfenol-D powder, epoxy resin glue, ultraviolet glue, the FPI, and the first harmonic vernier effect, a compact optical fiber magnetic field sensor can be manufactured, which is easy to manufacture, easy to package, and highly sensitive. The sensor is suitable for measuring magnetic fields in confined spaces and has excellent practical application value.

In one aspect, a method of manufacturing a magnetoresistance (MR) element having layers include ramping up a temperature of a reference layer of the MR element to an annealing temperature of the reference layer by increasing an amplitude of laser pulses applied to the reference layer over time to an amplitude that corresponds to the annealing temperature of the reference layer; applying a magnetic field to the reference layer; and maintaining the amplitude of subsequent laser pulses over time that have the amplitude that corresponds to the annealing temperature of the reference layer until at least the reference layer is annealed.

Apparatuses (e.g., system and devices, including sensors) and methods that may include single layered or multilayered stack-based acoustically driven ferromagnetic resonance (ADFMR) sensors that incorporate Fe—Ga—B materials (or in some cases Fe—Ga and C, Fe—Si and B, Fe—Si and C, Co—Fe and B, Co—Fe and C) as all or part of the thin-film magnetic element of the ADFMR sensors (e.g., the ferromagnetic film). These apparatuses and methods may have enhanced sensitivities when implemented as part of an ADFMR device. An Fe—Ga—B multilayered thin-film may be, e.g., between about 1 nm-1000 nm in total thickness.