496results about "Single device manufacturing" patented technology

The invention relates to a magnetic field sensor based on a room-temperature two-dimensional magnetic semiconductor material and a preparation method and application thereof, and the preparation method comprises the steps: arranging two electrodes which are not communicated with each other on an insulating substrate, obtaining a layered iron gallium tellurium material, transferring the layered iron gallium tellurium material to the insulating substrate, enabling at least one layered iron gallium tellurium material to be separated from the insulating substrate, and enabling the layered iron gallium tellurium material to be separated from the insulating substrate. The first product covers the two electrodes at the same time, tetrabutylammonium cations or oxygen plasmas are used for carrying out an intercalation reaction on the layered iron gallium tellurium material of the first product, and the layered iron gallium tellurium material of the first product is converted into an intercalated layered iron gallium tellurium material; and performing vacuum annealing to obtain the magnetic field sensor. The sensor provided by the invention reflects the magnetic field intensity by using the polarized light current between the electrodes, and can realize wide-range and high-precision magnetic field detection.

Spiral inductors, magnetic field sensors incorporating the spiral inductors, and methods of using the magnetic field sensors are provided. The spiral inductors include an electrically conductive spiral coil and a nitrogen vacancy (NV) diamond substrate. A thin barrier layer of a dielectric material separates the spiral coil from the surface of the NV diamond substrate and an overlayer of dielectric material is disposed over the spiral nanocoil. The integration of the spiral coil with an NV substrate in this manner creates a highly enhanced magnetic transduction and produces a simple, high-performance way to control and read out electromagnetic signals. Because the spiral inductors enable electromagnetic-to-optical signal conversion, they can be used as sensors for environmental or biomedical applications and spin-based computation.

The invention provides a Z-axis magnetic field sensor. The Z-axis magnetic field sensor comprises a plastic packaging layer, a magnetic resistor Die, a plurality of pins and a first shielding layer. And the first shielding layer is arranged on the upper surface of the magnetoresistive Die and consists of a plurality of soft magnetic material blocks in an X-Y plane so as to shield a magnetic field in the X-Y direction on the upper surface of the magnetoresistive Die. The magnetic resistor Die is manufactured by adopting a wafer front-end process and comprises a magnetic resistor and a Z-axis magnetic field conversion part above the magnetic resistor. Each welding spot on the upper surface of the reluctance Die is directly covered by an independent soft magnetic material block in the first shielding layer to form a wiring end, and each pin is in one-to-one correspondence contact with the welding spot. The Z-axis magnetic field sensor provided by the invention is manufactured by combining a semiconductor front-end process and a special packaging process, so that the volume size is effectively reduced, an XY plane interference magnetic field is shielded more thoroughly, and the anti-interference capability is stronger.

To provide a magnetic sensor device in which influence of stress applied is suppressed.SOLUTION: A magnetic sensor device 1 comprises magnetic sensors 10, 20, 30, and a support medium 4. The center of mass of an element arrangement area of the magnetic sensors 10, 20, 30 is displaced from center of mass C4 of a reference plane 4a of the support medium 4. Each of the magnetic sensors 10, 20, 30 includes four resistance parts composed of a plurality of MR elements. Magnetization of a free layer 54 in two resistance parts contains a component in a third magnetization direction. Magnetization of the free layer 54 in each of the remaining two resistance parts contains a component in a fourth magnetization direction opposite to the third magnetization direction.SELECTED DRAWING: Figure 8

Methods and apparatus for a magnetic field sensor having a first set of MR elements configured to change in resistance due to an applied magnetic field having an orientation in a sensitive axis of the first set of MR elements and a second set of MR elements that are immune to the applied magnetic field. The second set of MR elements is configured to change in resistance due to temperature. A processor can compensate for the response of the first set of MR elements based on the temperature information from the second set of MR elements.

A tunnel magnetoresistive (TMR) multi-turn (MT) sensor can include sensing elements which can be provided with two or more electrical contacts for performing current-in-plane tunnelling measurements. The two or more electrical contacts may be provided above or below the TMR sensing elements. One or more read-out pillars formed from TMR sensing material may be provided, the read-out pillars being electrically connected to one or more TMR sensing elements. The read-out pillars can be configured such that the resistance observed in the read-out pillars is negligible or near-negligible relative to that observed in the TMR sensing elements, such that the measured output signal only reflects the change in resistance experience by the TMR sensing elements in the presence of an externally rotating magnetic field.

The invention relates to an MEMS fluxgate sensor with double-layer induction coils and a manufacturing method thereof, the MEMS fluxgate sensor is composed of a group of symmetrically distributed single-layer excitation coils, a group of double-layer induction coils and a closed-loop magnetic core, and the core of the MEMS fluxgate sensor lies in design and implementation of a wafer-level double-layer induction coil structure. The manufacturing method comprises the following steps: patterning the magnetic core by femtosecond laser; manufacturing a coil silicon mold by a deep reactive ion etching process; and filling the silicon mold with metal to manufacture the coil. The manufacturing of the wafer-level double-layer induction coil is realized, and the sensitivity of the MEMS fluxgate sensor can be effectively improved under the same physical size. According to the method, the iron-based amorphous ribbon is selected as a magnetic core material, the magnetic core is patterned in a femtosecond laser cutting mode, it can be guaranteed that the size error is within the range of + / -5 microns, and the pattern asymmetry influence caused by machining errors is effectively reduced.

The present disclosure provides a method for optimizing a broadband noise of an inductive magnetic field sensor as well as a magnetic field sensor, including: determining a functional relationship between an induced voltage of a coil and an effective permeability of a magnetic core of the inductive magnetic field sensor; determining an equivalent voltage noise expression of a temperature variation-induced permeability noise of the magnetic core according to the functional relationship; determining a key influencing factor of the magnetic core according to the equivalent voltage noise expression of the temperature variation-induced permeability noise of the magnetic core; modifying the magnetic core according to the key influencing factor of the magnetic core to optimize the temperature variation-induced permeability noise of the magnetic core; and constructing a dual-channel composite multi-stage modulation signal-noise separation circuit to optimize a low-frequency band noise and a high-frequency band noise of the inductive magnetic field sensor.

Method for forming a magnetoresistive element by forming a sense layer having a free sense magnetization, a reference layer having a fixed reference magnetization, wherein the reference layer is formed by deposition in a Krypton atmosphere, a tunnel barrier layer between the reference layer and the sense layer, and a hard layer having a fixed reference magnetization layer opposite to that of the reference layer. The magnetoresistive element may be configured to measure an external magnetic field oriented substantially perpendicular to the plane of the reference layer. The reference magnetizations of the reference and hard layers may be oriented substantially perpendicularly to the plane of the reference and hard layers. The sense magnetization may have a vortex configuration in the absence of an external magnetic field.

In a general aspect, antirelaxation coatings are disclosed for coating the interior surfaces of vapor cells. In certain aspects, a vapor cell includes a dielectric body having interior and exterior surfaces. The interior surface defines a cavity in the dielectric body, and the exterior surface defines an opening to the cavity. The vapor cell also includes an antirelaxation coating that is disposed on the interior surface of the dielectric body and includes an organosilane material. The vapor cell additionally includes a vapor or a source of vapor residing in the cavity as well as an optical window that covers the opening to the cavity. The optical window has a surface bonded to the exterior surface of the dielectric body to form a seal around the opening. The vapor or the source of vapor includes alkali metal atoms.

The present invention discloses a method for manufacturing an optical fiber magnetic field sensor composed of Terfenol-D powder and FPI. The method comprises the following steps: a first step of manufacturing a Fabry-Perot interferometer 1 (FPI1); a second step of uniformly coating the Terfenol-D powder on the surface of a large capillary of the FPI1 to form the FPI1 that is sensitive to a magnetic field; a third step of manufacturing a Fabry-Perot interferometer 2 (FPI2); and a fourth step of fusing the single-mode optical fiber ends of the FPI1 and the FPI2 together using a fusion splicer, with the two FPIs spaced 5 mm to 1 cm apart. The two FPIs are cascaded to form a first harmonic vernier effect sensor. The method of the present invention absorbs the advantages of existing sensors and overcomes their disadvantages. By utilizing a quartz capillary, a single-mode optical fiber, Terfenol-D powder, epoxy resin glue, ultraviolet glue, the FPI, and the first harmonic vernier effect, a compact optical fiber magnetic field sensor can be manufactured, which is easy to manufacture, easy to package, and highly sensitive. The sensor is suitable for measuring magnetic fields in confined spaces and has excellent practical application value.

In one aspect, a method of manufacturing a magnetoresistance (MR) element having layers include ramping up a temperature of a reference layer of the MR element to an annealing temperature of the reference layer by increasing an amplitude of laser pulses applied to the reference layer over time to an amplitude that corresponds to the annealing temperature of the reference layer; applying a magnetic field to the reference layer; and maintaining the amplitude of subsequent laser pulses over time that have the amplitude that corresponds to the annealing temperature of the reference layer until at least the reference layer is annealed.

A layered structure includes a silicon-based substrate comprising a substrate surface; a titanium-copper seed layer arranged on the substrate surface, wherein the titanium-copper seed layer comprises a titanium layer and a copper layer, wherein the titanium layer is arranged on the substrate surface such that covalent bonds are formed between the titanium layer and silicon of the silicon-based substrate, and wherein the copper layer is arranged directly on the titanium layer, such that the titanium layer is arranged between the substrate surface and the copper layer; and a nickel-iron plating layer arranged directly on the copper layer of the titanium-copper seed layer such that the titanium-copper seed layer is arranged between the silicon-based substrate and the nickel-iron plating layer.

A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a "Z" axis magnetic field onto sensors orientated in the XY plane.

[Problem] To electrically connect a lead layer and a protective film reliably even when the film thickness of a protective film that covers a functional film is extremely thin. [Solution] After the conductive protective film 51 is formed on the surface of the functional film 20, reverse sputtering is performed while a portion of the surface of the protective film 51 is covered with a mask 60, thereby physically restoring a natural oxide film 52 formed on the surface of the protective film 51 not covered by the mask 60. Thereafter, a lead layer 40 is formed on the surface of the protective film 51 not covered by the mask 60. Consequently, since the natural oxide film 52 formed on the surface of the protective film 51 can be removed without performing etching, the lead layer 40 and the protective film 51 can be connected electrically without damaging the functional layer 20 even when the film thickness of the protective film 51 is extremely thin.

The present invention discloses a stacked die assembly. A sensor device (1) includes: a lead frame (9); first / second semiconductor dies (2a) having first / second sensor structures (4a, 14a) at first / second sensor positions (L1, L2), and a plurality of first / second bonding pads (7a, 7b) electrically connected to the lead frame (9); the semiconductor die has a square or rectangle with a geometric center (6a); the sensor positions (L1, L2) are offset from the geometric center; the second die (2b) is stacked on top of the first die (2a) and is rotated by a non-zero angle and optionally also offset or displaced (DX, DY) relative to the first die (2a) such that the vertical projections of the first sensor position (L1) and the second sensor position (L2) coincide.

The invention discloses an optical fiber mine magnetic detection sensor and system based on a magnetic composite sheath and an FPI, and belongs to the technical field of optical fiber sensing and mineral resource detection. The magnetic composite sheath optical fiber sensor comprises an optical fiber core, a Fabry-Perot interference cavity inscribed in the fiber core, a wrapping layer wrapping the outer side of the fiber core, a coating layer wrapping the outer side of the wrapping layer, and a magnetic composite sheath wrapping the outer side of the coating layer. And the magnetostrictive composite sheath is prepared by compounding Terfenol-D / Metglas and novolac epoxy resin. The optical fiber detection sensing system comprises a laser light source, an acousto-optic modulator, an erbium-doped optical fiber amplifier, a beam splitter, a circulator, a magnetic composite sheath optical fiber sensor, a reference optical fiber sensor, a beam combiner, a detector and a data processor. The optical fiber mine magnetic detection sensor and system are widely applied to underground mineral magnetic field detection, and have the advantages of high sensitivity, high environmental adaptability, low cost and the like.

A sensor package is proposed, including a tunneling magnetoresistance (TMR) sensor chip and a buffer layer having a modulus of elasticity of less than 1 GPa at a temperature of 20° C. The buffer layer is fitted on and / or under the TMR sensor chip.

To provide a magnetoresistive element, a magnetic memory, and a magnetic sensor that are resistant to the influence of external forces such as heat and external magnetic fields and have high magnetization stability.SOLUTION: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer, and an underlayer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is located between the underlayer and the non-magnetic layer. The underlayer contains Ta. The first ferromagnetic layer is expressed as CoαFeβXγPtδ, where X is boron or carbon, and α+β+γ+δ=1, α≥β>0, and δ≤0.3 are satisfied. The easy axis of magnetization of the first ferromagnetic layer is a first in-plane direction perpendicular to a stacking direction, and the anisotropy field of the first ferromagnetic layer in a second direction is 50 Oe or more. The second direction is perpendicular to the stacking direction and the first direction.SELECTED DRAWING: Figure 1

A magnetic sensor comprises at least one MR element and at least one magnetic field generator. The at least one MR element comprises a magnetization-resistant layer and a free layer. The at least one magnetic field generator comprises a ferromagnetic part and an antiferromagnetic part that is exchange-coupled to the ferromagnetic part. A method for manufacturing the magnetic sensor comprises a process for forming the at least one magnetoresistive element and a process for forming the at least one magnetic field generator.The process of forming the at least one magnetic field generator includes a process of forming at least one initial magnetic field generator having an initial ferromagnetic part, which later becomes the ferromagnetic part, and the antiferromagnetic part, and a process of fixing a magnetization direction of the initial ferromagnetic part so that the initial ferromagnetic part becomes the ferromagnetic part, using laser light and an external magnetic field.

The invention relates to a manufacturing method of a magnetic sensor. The magnetic sensor includes at least one MR element and at least one magnetic field generator. The at least one MR element includes a magnetization-fixed layer and a free layer. The at least one magnetic field generating body includes a ferromagnetic part and an antiferromagnetic part that is exchange-coupled to the ferromagnetic part. A method for manufacturing a magnetic sensor includes a step of forming at least one MR element, and a step of forming at least one magnetic field generator. The step of forming the at least one magnetic field generating body includes: a step of forming at least one initial magnetic field generating body including an initial ferromagnetic part and an antiferromagnetic part that later become a ferromagnetic part; and a step for fixing the direction of magnetization of the initial ferromagnetic part using the laser and the external magnetic field so that the initial ferromagnetic part becomes a ferromagnetic part.

A manufacturing method for a magneto resistive sensor includes a first magnetization step for magnetizing a first area of an antiferromagnetic layer by applying a magnetic field in a first magnetization direction and irradiating the first area with a laser beam, and a second magnetization step for magnetizing a second area of the antiferromagnetic layer, the second area not overlapping the first area, after the first magnetization step by applying a magnetic field in a second magnetization direction that differs from the first magnetization direction and irradiating the second area with the laser beam.

A manufacturing method for a fluxgate chip, comprising: firstly, selecting two high-resistance silicon wafers, electroplating a ferromagnetic core on the surface of one of the two high-resistance silicon wafers, and providing a ferromagnetic core cavity on the surface of the other high-resistance silicon wafer; then, bonding the two high-resistance silicon wafers up and down; next, respectively providing coil grooves, through grooves and electrode windows on the surfaces of opposite sides of the two high-resistance silicon wafers to form a silicon wafer mold; and finally, filling the surface of the silicon wafer mold with alloy. By means of electroplating, post-bonding and final etching, on the one hand, the formed fluxgate chip has both small thickness and sufficient strength, on the other hand, large-scale batch production of the fluxgate chip can be achieved, the working efficiency is improved, and the production cost is reduced.

In a magnetic sensor having a structure in which a magnetic sensor module is housed in a housing, damage to a magnetosensitive element during assembly is prevented. A magnetic sensor (S) is provided with a housing (2, 3), a magnetic sensor module (1) housed in the housing (2, 3), and an insulating dummy substrate (4). A magnetic sensor module (1) is provided with: an insulating substrate (10); a sensor chip (100) mounted on the upper surface (11) of the substrate (10); a terminal electrode (72) provided on the upper surface (11) of the substrate (10); a wiring pattern (82) provided on the lower surface (12) of the substrate (10); a first via conductor (V12) that is provided through the substrate (10) and connects one end of the wiring pattern (82) and the terminal electrode (72); and a second via conductor (V32) that is provided through the substrate (10) and connects the other end of the wiring pattern (82) and the sensor chip (100). The dummy substrate (4) is disposed between the inner wall of the frame (2, 3) and the lower surface (12) of the substrate (10).

A sensor device contains a magnetic field sensor chip having a front face, a rear face and a side surface connecting the front face and the rear face. The magnetic field sensor chip has a sensor element which is arranged on the front face and is configured to detect a magnetic field component running parallel to the front face. The magnetic field sensor chip furthermore has multiple first contact pads arranged on the front face, wherein all of the first contact pads arranged on the front face are arranged at an edge of the magnetic field sensor chip lying between the front face and the side surface.

In a general aspect, methods for manufacturing vapor cells are disclosed. In certain aspects, a method of manufacturing a vapor cell includes obtaining a dielectric body that has interior and exterior surfaces. The interior surface defines a cavity in the dielectric body, and the exterior surface defines an opening to the cavity. The method includes forming an antirelaxation coating on the interior surface of the dielectric body. The antirelaxation coating comprising an organosilane material. The method additionally includes disposing a vapor or a source of vapor in the cavity and obtaining an optical window that comprises a surface. The vapor or the source of vapor includes alkali metal atoms. The method also includes bonding the surface of the optical window to the exterior surface of the dielectric body to form a seal around the opening to the cavity.

A device having a spin valve layer sequence, wherein the spin valve layer sequence includes a first magnetic layer having a variable direction of magnetization, a second magnetic layer having a fixed direction of magnetization, and a stabilization layer for stabilizing the fixed direction of magnetization of the second magnetic layer, wherein the stabilization layer includes a precious metal-free antiferromagnet.

To provide a magnetic sensor applied to a magnetic field detection device that can accurately detect a magnetic field in a predetermined direction while being compact.SOLUTION: A magnetic sensor comprises a stacked structure in which a first layer including a magnetic yoke, and a second layer including a magnetic field detection element and a plurality of magnetic field generators each applying a magnetic field to the magnetic field detection element and arranged discretely along a first axis direction, are stacked in order in a second axis direction intersecting the first axis direction. The magnetic field detection element is interposed between two magnetic field generators selected from the plurality of magnetic field generators in the first axis direction. The magnetic yoke extends in the first axis direction, and is adjacent to the magnetic field detection element in a third axis direction intersecting both the first axis direction and the second axis direction in a plan view. Magnetization directions of the plurality of magnetic field generators are each inclined at less than 45° with respect to the first axis direction.SELECTED DRAWING: Figure 1B

Various embodiments include a thermally packaged atomic device. The thermally packaged atomic device includes an atomic vapor unit, a heater, and a housing. The atomic vapor unit is located within the housing. The heater heats the atomic vapor unit. The housing is filled with a gas selected to have a thermal conductivity less than that of air. The gas having a thermal conductivity less than that of air may include xenon or krypton. The enclosure surrounds the atomic vapor unit with a gas.