Preparation method of 1550 nm waveband single photon source, single photon source and optical device

A single photon source and optical device technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficulty in preparing 1550nm light source, large deviation of film thickness, crystal quality cannot reach single crystal, etc., and achieve the effect of overcoming preparation difficulties

Active Publication Date: 2020-08-21
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The 3C-SiC thin film is mainly deposited on the surface of Si substrate by means of atmospheric pressure chemical vapor deposition (APCVD) and reduced pressure chemical vapor deposition (RPCVD). The 3C-SiC thin film prepared by this method is mainly polycrystalline Thin film, crystal quality cannot reach single crystal
The former will cause device performance degradation due to ion implantation damage, while the latter has extremely poor control of film thickness due to the thinning process, and the film thickness deviation

Method used

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  • Preparation method of 1550 nm waveband single photon source, single photon source and optical device
  • Preparation method of 1550 nm waveband single photon source, single photon source and optical device
  • Preparation method of 1550 nm waveband single photon source, single photon source and optical device

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Example Embodiment

[0041] Example 1

[0042] This embodiment provides a method for preparing a single photon source in the 1550 nm band. The preparation method in this embodiment at least includes the following steps:

[0043] S1, provide a SiC wafer 1, in the SiC wafer 1 The silicon oxide protective layer 2 is formed by wet thermal oxidation on the surface, the thermal oxidation temperature is 1000°C, the oxidation time is 24h, and the thickness of the silicon oxide protective layer 2 is 5 μm;

[0044] S2, implant ion edge H ion implantation is performed on the SiC wafer 1 to form an implantation structure with a defect layer 3 inside the SiC wafer 1, and the implantation dose is 1×10 18 cm -2 , The injection energy is 2MeV;

[0045] S3. Provide a polycrystalline SiC substrate 4 with a silicon oxide dielectric layer 5, and bond the implanted structure with the silicon oxide dielectric layer 5 along the surface of the silicon oxide protective layer 2 to form a bonding structure 6, wherein the SiC subst...

Example Embodiment

[0051] Example 2

[0052] This embodiment provides a method for preparing a single photon source in the 1550 nm band. The preparation method in this embodiment at least includes the following steps:

[0053] S1, provide a SiC wafer 1, in the SiC wafer 1 The silicon oxide protective layer 2 is formed by wet thermal oxidation on the surface, the thermal oxidation temperature is 1000°C, the oxidation time is 2h, and the thickness of the silicon oxide protective layer 2 is 3 μm;

[0054] S2, implant ion edge H ion implantation is performed on the SiC wafer 1 to form an implantation structure with a defect layer 3 inside the SiC wafer 1, and the implantation dose is 1×10 17 cm -2 , The injection energy is 1.5MeV;

[0055] S3. Provide a polycrystalline SiC substrate 4 with a silicon oxide dielectric layer 5, and bond the implanted structure with the silicon oxide dielectric layer 5 along the surface of the silicon oxide protective layer 2 to form a bonding structure 6, wherein the SiC subs...

Example Embodiment

[0060] Example 3

[0061] This embodiment provides a method for preparing a single photon source in the 1550 nm band. The preparation method in this embodiment at least includes the following steps:

[0062] S1, provide a SiC wafer 1, in the SiC wafer 1 The silicon oxide protective layer 2 is formed by wet thermal oxidation on the surface, the thermal oxidation temperature is 1150°C, the oxidation time is 10 minutes, and the thickness of the silicon oxide protective layer 2 is 200 nm;

[0063] S2, implant ion edge He ion implantation is performed on the SiC wafer 1 to form an implantation structure with a defect layer 3 inside the SiC wafer 1, and the implantation dose is 1×10 17 cm -2 , The injection energy is 1MeV;

[0064] S3. Provide an α-SiC substrate 4 with a silicon oxide dielectric layer 5, and bond the implanted structure with the silicon oxide dielectric layer 5 along the surface of the silicon oxide protective layer 2 to form a bonding structure 6, wherein the SiC substrat...

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Abstract

The invention discloses a preparation method of a 1550 nm waveband single photon source, the single photon source and an optical device. The preparation method comprises the following steps: preparinga silicon oxide layer on a SiC wafer (0001) surface; carrying out ion implantation; bonding with another SiC substrate with a silicon oxide dielectric layer along the surface of the silicon oxide; carrying out annealing stripping, and transferring the SiC film to the SiC substrate; preparing a mask on the SiC film, and removing the mask pattern to expose a part of the SiC film; performing V ion implantation, and removing the mask region; preparing a C film, and activating a V ion doping method step; and transferring the SiC film to a substrate through ion implantation, and preparing a 1550 nmcommunication band single photon source. According to the invention, the problems that a 1550 nm light source of an existing photonics platform is difficult to prepare and a single photon source andan optical device are difficult to integrate are effectively solved, a 1550 nm communication light source with high uniformity and high quality is obtained on a SiC platform, and the single photon source and the device are integrated on the same platform.

Description

technical field [0001] The invention relates to the technical field of electronic information functional materials and devices, in particular to a preparation method of a 1550nm band single photon source, a single photon source and an optical device. Background technique [0002] As a representative material in the third generation of semiconductors, SiC (silicon carbide) combines a wide band gap (2.4eV-3.2eV), high physical strength (Mohs hardness 9.5, Knoop hardness 2480kg / mm 2 ), high thermal conductivity (480W / mK), high corrosion resistance, high melting point, high optical second-order third-order nonlinear coefficient, wide light transmission window (0.37-5.6μm), wide-area defect emission window (visible light to mid-infrared ) and many other excellent properties, it is an ideal material for integrating optical, nonlinear and optomechanical devices. High refractive index achieves high confinement of optical modes, which will bring greater flexibility in the field of d...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/06H01L33/34
CPCH01L33/0054H01L33/0095H01L33/06H01L33/343
Inventor 欧欣伊艾伦游天桂张加祥黄凯王曦
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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