Method for preparing p-type ZnO film by doping Sb

A thin-film, p-type technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of low p-type ZnO doping efficiency, and achieve the effect of overcoming preparation difficulties

Inactive Publication Date: 2009-12-30
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the shortcoming of low p-type ZnO doping efficiency at present, and provide a kind of efficient and stable p-type doping method of ZnO by using MOCVD and Sb metal organics

Method used

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  • Method for preparing p-type ZnO film by doping Sb
  • Method for preparing p-type ZnO film by doping Sb

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Substrate cleaning treatment. Sapphire, Si, GaAs, InP, CaF for substrates 2 , Quartz, glass can be used, the substrate can be treated with the standard cleaning process of general semiconductors.

[0023] (2) Send the cleaned substrate to the pretreatment chamber, and close the door of the sample pretreatment chamber. Start the mechanical pump to evacuate the sample pretreatment chamber until the vacuum degree of the sample pretreatment chamber reaches 50-10 -1 When Pa, turn on the mechanical pump of the reaction chamber to evacuate. When the vacuum degree of the reaction chamber and the vacuum degree of the sample pretreatment chamber are basically balanced, open the connecting gate valve to transfer the substrate to the substrate sheet tray of the reaction chamber, and close the gate. plate valve.

[0024] (3) When the vacuum degree of the reaction chamber reaches below 10Pa, the turbo molecular pump of the reaction chamber can be started. The vacuum degree of...

Embodiment 2

[0030] This process method is basically the same as the steps in Example 1, the difference is that step-by-step annealing is performed during the growth process to form a buffer layer and improve the growth quality of the subsequent thin film. The specific method is to grow for a period of time at 150°C to 500°C in a low growth temperature range, 1 to 20 minutes), then turn off the zinc source, and heat the substrate sheet in situ to 700 to 800°C for thermal annealing. The treatment time is After 1 to 30 minutes, the substrate temperature is lowered to the growth temperature and then the growth is continued until the required thickness is reached.

Embodiment 3

[0032] This process method is the same as the steps in Example 1, the difference is that after the growth is completed, the zinc source is turned off, and the substrate temperature is raised to 700-800 °C and then annealed in oxygen to further improve the doping of p-type ZnO. quality; can also be used concurrently with the method of introducing a buffer layer in Example 2.

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Abstract

The present invention discloses a method for preparing p type ZnO film by Sb doping, belonging to the field of semiconductor doping technology. The invention relates to a p type Zno doping technology, particularly to a doping technology by metal organic chemical vapor deposition (MOCVD) technology, which uses organic source as the p type doping agent of ZnO. The method is characterized in: with antimony metallorganic as the doping source of p type ZnO, antimony doping p type ZnO film is prepared by metal organic chemical vapor deposition. When the temperature of a substrate is 250 DEG to 650 DEG C, the proportion of antimony doping to ZnO is controlled by adjusting the carrier gas flow rate of antimony metallorganic and zinc metallorganic to grow p type ZnO. The effect and benefit of the invention lies in a high-quality high-controllability p type ZnO growing technology is provided, which is an industrial production transplantable metal organic chemical vapor deposition technology, the difficulty of p type ZnO doping is overcome, thus to realize p-n junction type optoelectronic devices of ZnO.

Description

technical field [0001] The invention relates to a doping technology of p-type ZnO, a method for growing p-type ZnO thin films by doping Sb, belonging to the technical field of semiconductor materials, and in particular to a p-type ZnO using an organic source as a metal organic chemical vapor deposition (MOCVD) technology. Doping method of dopants. Background technique [0002] ZnO is another new type of wide-bandgap semiconductor material after GaN. It has a higher exciton binding energy than GaN material, and can achieve efficient exciton-related emission at room temperature or even higher temperature. However, in order to realize the application in optoelectronic devices, the p-type doping of ZnO has always been a research hotspot. Due to the existence of many intrinsic defects in ZnO, such as Zn gaps and O vacancies, undoped ZnO becomes an n-type semiconductor material, and these defects have a strong self-compensation effect, so it is difficult to do p-type ZnO doping. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/40C23C16/455C23C16/52
Inventor 梁红伟杜国同赵涧泽孙景昌边继明胡礼中
Owner DALIAN UNIV OF TECH
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