The invention relates to the technical field of
photoresist purification. The invention relates to
polyamide resin, in particular to modified
polyamide resin based on an
ion imprinting technology and a preparation method and application thereof. The preparation method comprises the following steps: (1) dispersing PA66 resin in water, adding an initiator and a dispersant, vigorously oscillating, continuously adding a
functional monomer to obtain a reaction solution, and carrying out closed stirring reaction; (2) after the reaction is finished, adding water into the reaction liquid, carrying out
solid-liquid separation, activating the separated
solid by using an activating agent, washing and
drying to obtain carboxyl modified PA66 resin; and (3) adding a dispersing agent and a
metal ion template solution into the carboxyl modified PA66 resin, uniformly stirring, adding excessive deionized water for
quenching reaction, vigorously stirring, standing, precipitating, carrying out
solid-liquid separation, soaking the separated solid by using an eluent, washing, soaking the solid by using an activating agent, washing and
drying to obtain the
metal ion modified PA66 resin. The prepared modified
polyamide resin can effectively remove
metal ions in the
photoresist, and meets the current purity requirement on the
photoresist.